CEB3060-VB Product details
Product introduction:
CEB3060-VB is a high-performance single N-channel power MOSFET that uses advanced trench technology and is packaged in a TO263 package. This MOSFET is designed for low to medium voltage applications and can operate stably at drain-source voltages up to 30V. Its exceptionally low on-resistance and high current handling capability make it ideal for high-efficiency, high-current density applications.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
- **Continuous drain current (ID)**: 98A
- **Technology**: Trench Technology
Domain and module applications:
1. **High-efficiency switching power supply**: The ultra-low on-resistance and high current capability of CEB3060-VB make it ideal for high-efficiency switching power supply design. It can be used as a switching element in DC-DC converters and switching regulators to help improve the overall efficiency of the system and reduce power consumption.
2. **Motor drive**: In motor drive applications, such as DC motors and stepper motor controllers, CEB3060-VB provides high current handling capability and low on-resistance, which can effectively drive motor loads and improve the efficiency and response speed of motor control systems.
3. **LED drive**: CEB3060-VB is suitable for high-power LED drive circuits. Its low on-resistance enables it to handle larger current loads and reduce power consumption, making it ideal for high-brightness LED lamps and display backlight modules.
4. **Power Management System**: In power management systems, such as power switches and power conditioning modules, CEB3060-VB provides efficient switch control and high current handling capability. It is able to achieve high efficiency in a compact package, suitable for power management applications that require high power handling.
5. **Automotive Electronics**: The high current capability and low on-resistance of CEB3060-VB are also suitable for automotive electronic systems, such as power management and motor control. It can provide reliable performance in the automotive environment, ensuring the stable operation of various electrical systems.
In summary, CEB3060-VB is a power MOSFET suitable for high current and high efficiency applications. Its ultra-low on-resistance and high current handling capability enable it to perform well in multiple fields such as switching power supplies, motor drives, LED drives, power management systems and automotive electronics, providing an excellent solution for high efficiency and high reliability applications.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image