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CEB20P06-VB Product details
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CEB20P06-VB MOSFET Product Introduction
CEB20P06-VB is a high-performance P-channel MOSFET in TO263 package, designed for low voltage, high current applications. The maximum drain-source voltage (VDS) of this MOSFET is -60V, the gate-source voltage (VGS) range is ±20V, and the threshold voltage (Vth) is -1.7V. Its on-resistance (RDS(ON)) is 77mΩ at VGS = 4.5V and 64mΩ at VGS = 10V, and the maximum drain current (ID) is -30A. This MOSFET adopts Trench technology, has excellent switching performance and low conduction loss, and is suitable for various high current control applications.
CEB20P06-VB is a high-performance P-channel MOSFET in TO263 package, designed for low voltage, high current applications. The maximum drain-source voltage (VDS) of this MOSFET is -60V, the gate-source voltage (VGS) range is ±20V, and the threshold voltage (Vth) is -1.7V. Its on-resistance (RDS(ON)) is 77mΩ at VGS = 4.5V and 64mΩ at VGS = 10V, and the maximum drain current (ID) is -30A. This MOSFET adopts Trench technology, has excellent switching performance and low conduction loss, and is suitable for various high current control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | 64mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description
1. **Package**: TO263
- **Description**: The TO263 package is a surface mount package with good heat dissipation and durability, suitable for high power and high current applications.
2. **Configuration**: Single P-channel
- **Description**: This MOSFET has a single P-channel configuration, suitable for circuits used in negative current control.
3. **VDS (Drain-Source Voltage)**: -60V
- **Description**: Maximum drain-source voltage, suitable for negative current applications handling medium voltage.
4. **VGS (Gate-Source Voltage)**: ±20V
- **Description**: Maximum voltage between gate and source, allowing flexible control circuit operation.
5. **Vth (Threshold Voltage)**: -1.7V
- **Description**: The minimum gate voltage that turns on the MOSFET. Below this voltage, the MOSFET does not conduct.
6. **RDS(ON) (On-Resistance)**: 77mΩ @ VGS = 4.5V
- **Description**: The on-resistance at a gate voltage of 4.5V, affecting the conduction loss and efficiency of the MOSFET.
7. **RDS(ON) (On-Resistance)**: 64mΩ @ VGS = 10V
- **Description**: The on-resistance at a gate voltage of 10V, providing a lower on-resistance and improving power efficiency.
8. **ID (Continuous Drain Current)**: -30A
- **Description**: The maximum negative current that the MOSFET can continuously handle under specified conditions, ensuring stability in high current applications.
9. **Technology**: Trench
- **Description**: Trench technology optimizes the on-resistance and switching performance of MOSFET, improving overall efficiency and reliability.
1. **Package**: TO263
- **Description**: The TO263 package is a surface mount package with good heat dissipation and durability, suitable for high power and high current applications.
2. **Configuration**: Single P-channel
- **Description**: This MOSFET has a single P-channel configuration, suitable for circuits used in negative current control.
3. **VDS (Drain-Source Voltage)**: -60V
- **Description**: Maximum drain-source voltage, suitable for negative current applications handling medium voltage.
4. **VGS (Gate-Source Voltage)**: ±20V
- **Description**: Maximum voltage between gate and source, allowing flexible control circuit operation.
5. **Vth (Threshold Voltage)**: -1.7V
- **Description**: The minimum gate voltage that turns on the MOSFET. Below this voltage, the MOSFET does not conduct.
6. **RDS(ON) (On-Resistance)**: 77mΩ @ VGS = 4.5V
- **Description**: The on-resistance at a gate voltage of 4.5V, affecting the conduction loss and efficiency of the MOSFET.
7. **RDS(ON) (On-Resistance)**: 64mΩ @ VGS = 10V
- **Description**: The on-resistance at a gate voltage of 10V, providing a lower on-resistance and improving power efficiency.
8. **ID (Continuous Drain Current)**: -30A
- **Description**: The maximum negative current that the MOSFET can continuously handle under specified conditions, ensuring stability in high current applications.
9. **Technology**: Trench
- **Description**: Trench technology optimizes the on-resistance and switching performance of MOSFET, improving overall efficiency and reliability.
Domain and module applications：
Application Examples
1. **Power Management**:
- The CEB20P06-VB can be used in power management applications such as switching elements in DC-DC converters. In these applications, it can control and regulate the power supply current, improving the overall efficiency and stability of the system. Its high current handling capability and low on-resistance make it suitable for use in high-power power management systems.
2. **Battery Protection**:
- In battery protection circuits, the CEB20P06-VB can be used as a negative current switch to protect the battery from overcurrent and overvoltage. Its P-channel configuration makes it suitable for protection circuits that control negative current.
3. **Power Switch**:
- This MOSFET can be used in a variety of power switching applications such as motor drives and power amplifiers. Its low on-resistance and high current capability enable it to effectively control motor current and improve drive performance.
4. **Automotive Electronics**:
- In automotive electronic systems, CEB20P06-VB can be used in high-power control modules, such as on-board power management and electrical load control. Its high current and low on-resistance characteristics are suitable for the stringent requirements in automotive environments.
5. **Industrial Control**:
- CEB20P06-VB is also suitable for switching applications in industrial control systems, such as power switches and control modules in industrial automation. Its high current capability and excellent switching performance enable it to operate stably in industrial environments.
In short, CEB20P06-VB MOSFET is widely used in power management, battery protection, power switches, automotive electronics and industrial control due to its high current capability, low on-resistance and excellent switching performance.
1. **Power Management**:
- The CEB20P06-VB can be used in power management applications such as switching elements in DC-DC converters. In these applications, it can control and regulate the power supply current, improving the overall efficiency and stability of the system. Its high current handling capability and low on-resistance make it suitable for use in high-power power management systems.
2. **Battery Protection**:
- In battery protection circuits, the CEB20P06-VB can be used as a negative current switch to protect the battery from overcurrent and overvoltage. Its P-channel configuration makes it suitable for protection circuits that control negative current.
3. **Power Switch**:
- This MOSFET can be used in a variety of power switching applications such as motor drives and power amplifiers. Its low on-resistance and high current capability enable it to effectively control motor current and improve drive performance.
4. **Automotive Electronics**:
- In automotive electronic systems, CEB20P06-VB can be used in high-power control modules, such as on-board power management and electrical load control. Its high current and low on-resistance characteristics are suitable for the stringent requirements in automotive environments.
5. **Industrial Control**:
- CEB20P06-VB is also suitable for switching applications in industrial control systems, such as power switches and control modules in industrial automation. Its high current capability and excellent switching performance enable it to operate stably in industrial environments.
In short, CEB20P06-VB MOSFET is widely used in power management, battery protection, power switches, automotive electronics and industrial control due to its high current capability, low on-resistance and excellent switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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