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CEB16N10-VB Product details
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1. Product Introduction
**CEB16N10-VB** is a high-performance N-channel MOSFET using trench technology and packaged in TO263. This MOSFET is designed for medium voltage and high current applications, with a drain-source voltage of 100V and a drain current capability of 20A. Its low on-resistance and low threshold voltage make it very suitable for applications requiring high switching efficiency and high current handling, providing excellent performance and reliability.
**CEB16N10-VB** is a high-performance N-channel MOSFET using trench technology and packaged in TO263. This MOSFET is designed for medium voltage and high current applications, with a drain-source voltage of 100V and a drain current capability of 20A. Its low on-resistance and low threshold voltage make it very suitable for applications requiring high switching efficiency and high current handling, providing excellent performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Model**: CEB16N10-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS = 10V
- **Drain current (ID)**: 20A
- **Technology**: Trench
- **Model**: CEB16N10-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS = 10V
- **Drain current (ID)**: 20A
- **Technology**: Trench
Domain and module applications：
III. Applicable fields and modules
**CEB16N10-VB**’s features enable it to excel in the following fields and modules:
1. **Power management**: In power management systems, such as DC-DC converters and switching power supplies (SMPS), CEB16N10-VB’s 100V drain-source voltage capability and low on-resistance can effectively handle high current loads, ensuring efficient power conversion and management.
2. **Industrial control**: In industrial automation and control systems, such as inverters, motor drives, and servo systems, this MOSFET provides high current handling capability and high switching efficiency, which can stably control high power loads and ensure reliable operation of equipment.
3. **Automotive electronics**: In automotive electronic systems, such as electric vehicle drive systems and automotive power management, this MOSFET can handle high current and high voltage requirements, ensuring efficient and stable operation of automotive electronic systems.
4. **LED lighting**: In high-power LED lighting systems, CEB16N10-VB can effectively drive LED lamps, provide the required current and voltage, optimize lighting performance and extend the life of LEDs.
5. **Home appliances and consumer electronics**: In home appliances and consumer electronics products such as washing machines, refrigerators and audio systems, the high current capability and low on-resistance of this MOSFET make it suitable for power switching and control functions to ensure efficient operation of the equipment.
**CEB16N10-VB** provides reliable solutions in the fields of power management, industrial control, automotive electronics, high-power lighting and home appliances through its high current handling capability and excellent switching performance, meeting the high efficiency and stability requirements of various applications.
**CEB16N10-VB**’s features enable it to excel in the following fields and modules:
1. **Power management**: In power management systems, such as DC-DC converters and switching power supplies (SMPS), CEB16N10-VB’s 100V drain-source voltage capability and low on-resistance can effectively handle high current loads, ensuring efficient power conversion and management.
2. **Industrial control**: In industrial automation and control systems, such as inverters, motor drives, and servo systems, this MOSFET provides high current handling capability and high switching efficiency, which can stably control high power loads and ensure reliable operation of equipment.
3. **Automotive electronics**: In automotive electronic systems, such as electric vehicle drive systems and automotive power management, this MOSFET can handle high current and high voltage requirements, ensuring efficient and stable operation of automotive electronic systems.
4. **LED lighting**: In high-power LED lighting systems, CEB16N10-VB can effectively drive LED lamps, provide the required current and voltage, optimize lighting performance and extend the life of LEDs.
5. **Home appliances and consumer electronics**: In home appliances and consumer electronics products such as washing machines, refrigerators and audio systems, the high current capability and low on-resistance of this MOSFET make it suitable for power switching and control functions to ensure efficient operation of the equipment.
**CEB16N10-VB** provides reliable solutions in the fields of power management, industrial control, automotive electronics, high-power lighting and home appliances through its high current handling capability and excellent switching performance, meeting the high efficiency and stability requirements of various applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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