CEB16N10L-VB Product details
Product introduction:
**CEB16N10L-VB** is a high voltage, single-channel N-channel MOSFET that uses Trench technology and is packaged in TO263. This MOSFET is designed for high voltage and medium current switching applications, with good current handling capability and low on-resistance. The maximum drain-source voltage (VDS) of CEB16N10L-VB is 100V, and the maximum gate-source voltage (VGS) is ±20V. Its gate threshold voltage (Vth) is 1.8V. When the gate-source voltage is 10V, the on-resistance (RDS(ON)) is 100mΩ, and the maximum drain current (ID) that can be tolerated is 20A. It is designed to provide stable performance and reliable switching capability, suitable for a variety of high voltage applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Model**: CEB16N10L-VB
- **Package**: TO263
- **Configuration**: Single channel N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 100mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: Trench
Domain and module applications:
**CEB16N10L-VB** MOSFET has a wide range of applications in multiple fields and modules, as follows:
1. **Power management system**:
- In power management systems, CEB16N10L-VB can be used as a high voltage load switch to control the distribution of power and protect circuits.
- Its lower on-resistance and higher current carrying capacity help improve the efficiency and reliability of the power system and reduce energy losses.
2. **Switching power supply**:
- In switching power supply modules, this MOSFET is suitable for switching control under high voltage, such as DC-DC converters and power adapters.
- Due to its high voltage withstand capability and medium on-resistance, it is able to handle higher power loads and ensure the stability of the power supply.
3. **Motor drive**:
- In motor drive systems, CEB16N10L-VB can be used as a switching element in motor control circuits, providing precise current control and reliable switching operation.
- High voltage and medium current capabilities make it ideal for medium power motor drive applications such as industrial motors and automotive motors.
4. **Automotive Electronics**:
- In automotive electronic systems, this MOSFET can be used as a key component in power switches and battery management systems, such as on-board power distribution and charger control.
- Its high voltage handling capability and stable performance ensure the reliable operation of automotive electronic systems.
5. **Industrial Automation**:
- In industrial automation systems, CEB16N10L-VB is suitable for switching and control circuits of high voltage loads, such as industrial controllers and high voltage relays.
- Its lower on-resistance and higher current handling capability make it excellent in various industrial equipment, improving system reliability and efficiency.
Through these application examples, we can see the importance of CEB16N10L-VB MOSFET in multiple fields such as power management, switching power supplies, motor drives, etc., and it can meet the needs of high voltage and medium current applications.
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