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CEB12P10-VB Product details
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CEB12P10-VB Product Introduction
CEB12P10-VB is a high voltage single P-channel MOSFET in TO263 package, designed for negative voltage applications. Using Trench technology, this MOSFET has low on-resistance and good switching performance, suitable for a variety of power management and load control applications. Its negative drain-source voltage (VDS) and high current handling capability make it excel in applications requiring reverse current control.
CEB12P10-VB is a high voltage single P-channel MOSFET in TO263 package, designed for negative voltage applications. Using Trench technology, this MOSFET has low on-resistance and good switching performance, suitable for a variety of power management and load control applications. Its negative drain-source voltage (VDS) and high current handling capability make it excel in applications requiring reverse current control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -12A | 200mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -12A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -12A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description
- **Model**: CEB12P10-VB
- **Package**: TO263
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 240mΩ @ VGS=4.5V
- 200mΩ @ VGS=10V
- **Drain current (ID)**: -12A
- **Technology**: Trench
- **Model**: CEB12P10-VB
- **Package**: TO263
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 240mΩ @ VGS=4.5V
- 200mΩ @ VGS=10V
- **Drain current (ID)**: -12A
- **Technology**: Trench
Domain and module applications：
Applications and modules
1. **Power management system**:
- In power management systems, the negative voltage and low on-resistance of CEB12P10-VB make it suitable for negative voltage converters and high-side switch applications. Its excellent switching characteristics help improve system efficiency and reduce power loss, and are suitable for high-efficiency power modules and negative voltage regulation circuits.
2. **Reverse current control**:
- In applications that require reverse current control, such as battery management systems and motor drive systems, CEB12P10-VB can effectively control and manage negative current. Its high withstand voltage and stable on-resistance make it suitable for protecting circuits and controlling current flow, ensuring system reliability and stability.
3. **Automotive electronic systems**:
- In automotive electronic systems, this MOSFET can be used in negative voltage power management, inverters, and other control modules. Its high withstand voltage and good current handling capability are suitable for power switches and load control in automobiles, ensuring reliability and performance in vehicle electrical systems.
4. **Industrial Automation and Control**:
- In industrial automation systems, CEB12P10-VB is suitable for negative voltage drive and high-side switch applications. Its good on-resistance and negative voltage handling capabilities make it suitable for use in control systems of industrial equipment to ensure stable operation and efficient operation of the equipment.
CEB12P10-VB provides reliable performance in multiple fields through its excellent electrical performance and Trench technology, especially in negative voltage and load control applications, ensuring efficient and long-term stable operation of the system.
1. **Power management system**:
- In power management systems, the negative voltage and low on-resistance of CEB12P10-VB make it suitable for negative voltage converters and high-side switch applications. Its excellent switching characteristics help improve system efficiency and reduce power loss, and are suitable for high-efficiency power modules and negative voltage regulation circuits.
2. **Reverse current control**:
- In applications that require reverse current control, such as battery management systems and motor drive systems, CEB12P10-VB can effectively control and manage negative current. Its high withstand voltage and stable on-resistance make it suitable for protecting circuits and controlling current flow, ensuring system reliability and stability.
3. **Automotive electronic systems**:
- In automotive electronic systems, this MOSFET can be used in negative voltage power management, inverters, and other control modules. Its high withstand voltage and good current handling capability are suitable for power switches and load control in automobiles, ensuring reliability and performance in vehicle electrical systems.
4. **Industrial Automation and Control**:
- In industrial automation systems, CEB12P10-VB is suitable for negative voltage drive and high-side switch applications. Its good on-resistance and negative voltage handling capabilities make it suitable for use in control systems of industrial equipment to ensure stable operation and efficient operation of the equipment.
CEB12P10-VB provides reliable performance in multiple fields through its excellent electrical performance and Trench technology, especially in negative voltage and load control applications, ensuring efficient and long-term stable operation of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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