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CEB09N7G-VB Product details
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CEB09N7G-VB MOSFET Product Introduction
CEB09N7G-VB is a high-voltage N-channel MOSFET in TO263 package, designed for high voltage applications. The maximum drain-source voltage (VDS) of this MOSFET is 700V, the gate-source voltage (VGS) range is ±30V, and the threshold voltage (Vth) is 3.5V. Its on-resistance (RDS(ON)) is 750mΩ, and the maximum drain current (ID) is 7A at VGS = 10V. This MOSFET adopts SJ_Multi-EPI technology, with high voltage resistance and stable switching performance, suitable for various applications requiring high voltage handling capabilities.
CEB09N7G-VB is a high-voltage N-channel MOSFET in TO263 package, designed for high voltage applications. The maximum drain-source voltage (VDS) of this MOSFET is 700V, the gate-source voltage (VGS) range is ±30V, and the threshold voltage (Vth) is 3.5V. Its on-resistance (RDS(ON)) is 750mΩ, and the maximum drain current (ID) is 7A at VGS = 10V. This MOSFET adopts SJ_Multi-EPI technology, with high voltage resistance and stable switching performance, suitable for various applications requiring high voltage handling capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 7A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
1. **Package**: TO263
- **Description**: The TO263 package is a surface mount package that provides good heat dissipation and durability, suitable for applications that need to handle higher power.
2. **Configuration**: Single N-channel
- **Description**: This MOSFET has a single N-channel configuration and is suitable for use in circuits that control positive current.
3. **VDS (Drain-Source Voltage)**: 700V
- **Description**: The maximum drain-source voltage that this MOSFET can withstand, providing reliable switching control for high voltage applications.
4. **VGS (Gate-Source Voltage)**: ±30V
- **Description**: The maximum voltage between the gate and the source allows control of the switching state of the MOSFET and supports a wide voltage range.
5. **Vth (Threshold Voltage)**: 3.5V
- **Description**: The minimum gate voltage that turns on the MOSFET. Above this voltage, the MOSFET enters the on state.
6. **RDS(ON) (On-Resistance)**: 750mΩ @ VGS = 10V
- **Description**: The on-resistance at a gate voltage of 10V affects the conduction loss and efficiency of the MOSFET.
7. **ID (Continuous Drain Current)**: 7A
- **Description**: The maximum current that the MOSFET can handle continuously under specified conditions, ensuring stability in high current applications.
8. **Technology**: SJ_Multi-EPI
- **Description**: The SJ_Multi-EPI technology optimizes the high withstand voltage and low on-resistance performance of the MOSFET, improving overall efficiency and reliability.
1. **Package**: TO263
- **Description**: The TO263 package is a surface mount package that provides good heat dissipation and durability, suitable for applications that need to handle higher power.
2. **Configuration**: Single N-channel
- **Description**: This MOSFET has a single N-channel configuration and is suitable for use in circuits that control positive current.
3. **VDS (Drain-Source Voltage)**: 700V
- **Description**: The maximum drain-source voltage that this MOSFET can withstand, providing reliable switching control for high voltage applications.
4. **VGS (Gate-Source Voltage)**: ±30V
- **Description**: The maximum voltage between the gate and the source allows control of the switching state of the MOSFET and supports a wide voltage range.
5. **Vth (Threshold Voltage)**: 3.5V
- **Description**: The minimum gate voltage that turns on the MOSFET. Above this voltage, the MOSFET enters the on state.
6. **RDS(ON) (On-Resistance)**: 750mΩ @ VGS = 10V
- **Description**: The on-resistance at a gate voltage of 10V affects the conduction loss and efficiency of the MOSFET.
7. **ID (Continuous Drain Current)**: 7A
- **Description**: The maximum current that the MOSFET can handle continuously under specified conditions, ensuring stability in high current applications.
8. **Technology**: SJ_Multi-EPI
- **Description**: The SJ_Multi-EPI technology optimizes the high withstand voltage and low on-resistance performance of the MOSFET, improving overall efficiency and reliability.
Domain and module applications：
Application Examples
1. **High Voltage Power Management**:
- CEB09N7G-VB excels in high voltage power management applications, such as high voltage DC-DC converters and switching power supplies. Its high voltage handling capability of 700V makes it suitable for power conversion and regulation systems with high voltage input, providing stable current control and high efficiency power conversion.
2. **Industrial Power**:
- In industrial power systems, CEB09N7G-VB can be used for motor drives, power protection circuits, and power amplifiers. Its high voltage and high current capabilities ensure stable and reliable operation in harsh industrial environments.
3. **Welding Equipment**:
- This MOSFET is suitable for power switches in welding equipment, such as arc welders and laser welding equipment. Its high voltage tolerance and on-resistance characteristics enable it to operate under high power loads, ensuring the stability and efficiency of the welding process.
4. **Electrical Protection**:
- In electrical protection modules, CEB09N7G-VB is used in high voltage protection circuits and overvoltage protection systems. Its high VDS capability enables it to effectively handle and protect high voltage devices from circuit overload and damage.
5. **Energy Conversion**:
- In energy conversion fields, such as wind and solar energy systems, CEB09N7G-VB can be used in high voltage conversion and control circuits. Its high voltage handling capability and low on-resistance characteristics make it suitable for use in energy conversion and power control systems, improving the efficiency and reliability of the system.
In summary, CEB09N7G-VB MOSFET is widely used in high voltage power management, industrial power supplies, welding equipment, electrical protection and energy conversion fields due to its high voltage handling capability, low on-resistance and stable switching performance.
1. **High Voltage Power Management**:
- CEB09N7G-VB excels in high voltage power management applications, such as high voltage DC-DC converters and switching power supplies. Its high voltage handling capability of 700V makes it suitable for power conversion and regulation systems with high voltage input, providing stable current control and high efficiency power conversion.
2. **Industrial Power**:
- In industrial power systems, CEB09N7G-VB can be used for motor drives, power protection circuits, and power amplifiers. Its high voltage and high current capabilities ensure stable and reliable operation in harsh industrial environments.
3. **Welding Equipment**:
- This MOSFET is suitable for power switches in welding equipment, such as arc welders and laser welding equipment. Its high voltage tolerance and on-resistance characteristics enable it to operate under high power loads, ensuring the stability and efficiency of the welding process.
4. **Electrical Protection**:
- In electrical protection modules, CEB09N7G-VB is used in high voltage protection circuits and overvoltage protection systems. Its high VDS capability enables it to effectively handle and protect high voltage devices from circuit overload and damage.
5. **Energy Conversion**:
- In energy conversion fields, such as wind and solar energy systems, CEB09N7G-VB can be used in high voltage conversion and control circuits. Its high voltage handling capability and low on-resistance characteristics make it suitable for use in energy conversion and power control systems, improving the efficiency and reliability of the system.
In summary, CEB09N7G-VB MOSFET is widely used in high voltage power management, industrial power supplies, welding equipment, electrical protection and energy conversion fields due to its high voltage handling capability, low on-resistance and stable switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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