CEB05P03-VB Product details
Product introduction:
**CEB05P03-VB** is a high-performance single-channel P-channel MOSFET using Trench technology and packaged in TO263. This MOSFET is designed for load switching applications that require high current and high voltage resistance. The maximum drain-source voltage (VDS) of CEB05P03-VB is -30V, and the maximum gate-source voltage (VGS) is ±20V. Its gate threshold voltage (Vth) is -2.5V. At a gate-source voltage of 4.5V, the on-resistance (RDS(ON)) is 11mΩ, while at a gate-source voltage of 10V, the on-resistance drops to 8mΩ. The maximum drain current (ID) it can withstand is -75A. Due to its excellent current handling capability and low on-resistance, CEB05P03-VB is ideal for high-efficiency power management and load switching applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | 8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
- **Model**: CEB05P03-VB
- **Package**: TO263
- **Configuration**: Single channel P-channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 11mΩ @ VGS=4.5V
- 8mΩ @ VGS=10V
- **Maximum drain current (ID)**: -75A
- **Technology**: Trench
Domain and module applications:
**CEB05P03-VB** MOSFET has a wide range of applications in multiple fields and modules, as follows:
1. **Power management**:
- In power management systems, CEB05P03-VB can be used as an efficient load switch to control power distribution and protect circuits.
- Its low on-resistance and high current handling capability help improve the efficiency of power systems and reduce energy losses.
2. **Switching power supply**:
- In switching power supply modules, this MOSFET is suitable for switching control of medium to high power loads, such as DC-DC converters and power adapters.
- Its high current carrying capacity and low on-resistance enable it to handle large current loads, ensuring the stability and reliability of the power supply.
3. **Motor drive**:
- In motor drive systems, CEB05P03-VB can be used as a switching element in motor control circuits, providing precise current control and fast switching response.
- High current capability and low on-resistance make it ideal for medium to high power motor drive applications.
4. **Automotive Electronics**:
- In automotive electronic systems, this MOSFET can be used for power switching and battery management systems such as automotive lighting, chargers, and power distribution modules.
- Its high current handling capability and compact package make it suitable for various power management and control applications inside the car.
5. **Industrial Applications**:
- In industrial automation and control systems, CEB05P03-VB can be used for switching and protecting circuits of high current loads to ensure efficient operation of the system.
- Its low on-resistance and high current capability make it excel in various industrial equipment, improving system reliability and efficiency.
These application examples show that CEB05P03-VB MOSFET plays an important role in power management, switching power supplies, motor drives, etc., and can meet the needs of high current and high efficiency applications.
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