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CEB02N7G-VB Product details
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CEB02N7G-VB MOSFET Product Introduction
**Model**: CEB02N7G-VB
**Package**: TO263
**Configuration**: Single N-channel
**Maximum drain-source voltage (VDS)**: 700V
**Maximum gate-source voltage (VGS)**: ±30V
**Threshold voltage (Vth)**: 3.5V
**On-resistance (RDS(ON))**: 750mΩ@VGS=10V
**Maximum drain current (ID)**: 7A
**Technology**: SJ_Multi-EPI
CEB02N7G-VB is a high voltage, moderate current capability N-channel power MOSFET using SJ_Multi-EPI technology. With a high voltage withstand capability of 700V and a drain current capability of 7A, it is ideal for power electronics applications that require high voltage and reliability.
**Model**: CEB02N7G-VB
**Package**: TO263
**Configuration**: Single N-channel
**Maximum drain-source voltage (VDS)**: 700V
**Maximum gate-source voltage (VGS)**: ±30V
**Threshold voltage (Vth)**: 3.5V
**On-resistance (RDS(ON))**: 750mΩ@VGS=10V
**Maximum drain current (ID)**: 7A
**Technology**: SJ_Multi-EPI
CEB02N7G-VB is a high voltage, moderate current capability N-channel power MOSFET using SJ_Multi-EPI technology. With a high voltage withstand capability of 700V and a drain current capability of 7A, it is ideal for power electronics applications that require high voltage and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 7A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 700V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V (typical)
- **On-resistance (RDS(ON))**: 750mΩ@VGS=10V
- **Maximum drain current (ID)**: 7A
- **Drain-source breakdown voltage (BVDSS)**: 700V
- **Gate leakage current (IGSS)**: ±100nA @ VGS=±30V
- **Power dissipation (Ptot)**: 60W
- **Junction-to-ambient thermal resistance (RθJA)**: 62.5°C/W
- **Junction-to-Case Thermal Resistance (RθJC)**: 1.8°C/W
- **Operating Junction Temperature Range**: -55°C to +150°C
- **Storage Temperature Range**: -55°C to +150°C
- **Technology**: SJ_Multi-EPI
- **Package type**: TO263
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 700V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V (typical)
- **On-resistance (RDS(ON))**: 750mΩ@VGS=10V
- **Maximum drain current (ID)**: 7A
- **Drain-source breakdown voltage (BVDSS)**: 700V
- **Gate leakage current (IGSS)**: ±100nA @ VGS=±30V
- **Power dissipation (Ptot)**: 60W
- **Junction-to-ambient thermal resistance (RθJA)**: 62.5°C/W
- **Junction-to-Case Thermal Resistance (RθJC)**: 1.8°C/W
- **Operating Junction Temperature Range**: -55°C to +150°C
- **Storage Temperature Range**: -55°C to +150°C
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application fields and module examples
1. **High voltage power conversion**: CEB02N7G-VB MOSFET is suitable for high voltage power converters such as AC-DC and DC-DC converters. Its 700V voltage tolerance enables it to handle high voltage input and provide stable power conversion and efficient power output.
2. **Lighting control**: In high voltage lighting systems, such as drive circuits for metal halide lamps or high pressure sodium lamps, CEB02N7G-VB is able to handle high voltage loads, provide reliable switch control and power management, and ensure stable operation of lighting systems.
3. **Motor drive**: In high voltage motor drive systems, such as industrial motor controllers, CEB02N7G-VB is able to handle higher voltage and current requirements and is suitable for efficient drive and control of various motors.
4. **Industrial Automation**: In industrial automation equipment, especially applications involving high voltage switch control, CEB02N7G-VB provides high voltage and moderate current handling capabilities to ensure system stability and reliability in high voltage environments.
5. **Power Inverter**: In high voltage power inverter applications, CEB02N7G-VB is able to handle high voltage DC input and convert it into stable AC output. Its high voltage capability and good conduction performance make it play an important role in inverter design.
6. **Power Protection**: In power protection circuits, especially high voltage protection systems, CEB02N7G-VB can be used for overvoltage protection and switch control to protect other circuits and equipment from high voltage shocks and overload damage.
CEB02N7G-VB is a high voltage, reliable power MOSFET that is widely used in high voltage and high power electronic systems. Its excellent performance and stability make it an ideal choice for a variety of power electronic applications.
1. **High voltage power conversion**: CEB02N7G-VB MOSFET is suitable for high voltage power converters such as AC-DC and DC-DC converters. Its 700V voltage tolerance enables it to handle high voltage input and provide stable power conversion and efficient power output.
2. **Lighting control**: In high voltage lighting systems, such as drive circuits for metal halide lamps or high pressure sodium lamps, CEB02N7G-VB is able to handle high voltage loads, provide reliable switch control and power management, and ensure stable operation of lighting systems.
3. **Motor drive**: In high voltage motor drive systems, such as industrial motor controllers, CEB02N7G-VB is able to handle higher voltage and current requirements and is suitable for efficient drive and control of various motors.
4. **Industrial Automation**: In industrial automation equipment, especially applications involving high voltage switch control, CEB02N7G-VB provides high voltage and moderate current handling capabilities to ensure system stability and reliability in high voltage environments.
5. **Power Inverter**: In high voltage power inverter applications, CEB02N7G-VB is able to handle high voltage DC input and convert it into stable AC output. Its high voltage capability and good conduction performance make it play an important role in inverter design.
6. **Power Protection**: In power protection circuits, especially high voltage protection systems, CEB02N7G-VB can be used for overvoltage protection and switch control to protect other circuits and equipment from high voltage shocks and overload damage.
CEB02N7G-VB is a high voltage, reliable power MOSFET that is widely used in high voltage and high power electronic systems. Its excellent performance and stability make it an ideal choice for a variety of power electronic applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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