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BUZ100S-VB Product details
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BUZ100S-VB MOSFET Product Introduction
BUZ100S-VB is a high-performance N-channel MOSFET packaged in TO263. This MOSFET is designed for applications that require high current handling capability and high-efficiency power management. It has a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) range of ±20V. Its threshold voltage (Vth) is 1.7V, ensuring reliable switching operation. The on-resistance (RDS(ON)) of BUZ100S-VB is 12mΩ at VGS = 4.5V and 11mΩ at VGS = 10V, supporting a continuous drain current (ID) of up to 75A. Using Trench technology, this MOSFET provides low conduction losses and excellent switching performance, suitable for a variety of applications with high power and high efficiency requirements.
BUZ100S-VB is a high-performance N-channel MOSFET packaged in TO263. This MOSFET is designed for applications that require high current handling capability and high-efficiency power management. It has a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) range of ±20V. Its threshold voltage (Vth) is 1.7V, ensuring reliable switching operation. The on-resistance (RDS(ON)) of BUZ100S-VB is 12mΩ at VGS = 4.5V and 11mΩ at VGS = 10V, supporting a continuous drain current (ID) of up to 75A. Using Trench technology, this MOSFET provides low conduction losses and excellent switching performance, suitable for a variety of applications with high power and high efficiency requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
1. **Package**: TO263
- **Description**: The TO263 package is a larger package that provides good heat dissipation and is suitable for applications that require high power handling and effective thermal management.
2. **Configuration**: Single N-channel
- **Description**: Single-channel configuration, easy to integrate into various electronic circuits, especially suitable for switching and amplification applications.
3. **VDS (Drain-Source Voltage)**: 60V
- **Description**: The maximum voltage that the MOSFET can withstand between the drain and the source when it is in the off state.
4. **VGS (Gate-Source Voltage)**: ±20V
- **Description**: The maximum allowable voltage between the gate and the source, used to control the switching state of the MOSFET.
5. **Vth (Threshold Voltage)**: 1.7V
- **Description**: The minimum gate voltage required to turn on the MOSFET, allowing conduction between the drain and the source to begin.
6. **RDS(ON) (On-Resistance)**:
- **12mΩ @ VGS = 4.5V**: On-resistance at a gate voltage of 4.5V.
- **11mΩ @ VGS = 10V**: On-resistance at a gate voltage of 10V.
- **Description**: Low on-resistance helps reduce power losses and improve power transfer efficiency.
7. **ID (Continuous Drain Current)**: 75A
- **Description**: The maximum current that a MOSFET can handle continuously under specified conditions.
8. **Technology**: Trench
- **Description**: Trench technology reduces conduction losses and improves switching characteristics through optimized design, thereby improving the overall performance of MOSFET.
1. **Package**: TO263
- **Description**: The TO263 package is a larger package that provides good heat dissipation and is suitable for applications that require high power handling and effective thermal management.
2. **Configuration**: Single N-channel
- **Description**: Single-channel configuration, easy to integrate into various electronic circuits, especially suitable for switching and amplification applications.
3. **VDS (Drain-Source Voltage)**: 60V
- **Description**: The maximum voltage that the MOSFET can withstand between the drain and the source when it is in the off state.
4. **VGS (Gate-Source Voltage)**: ±20V
- **Description**: The maximum allowable voltage between the gate and the source, used to control the switching state of the MOSFET.
5. **Vth (Threshold Voltage)**: 1.7V
- **Description**: The minimum gate voltage required to turn on the MOSFET, allowing conduction between the drain and the source to begin.
6. **RDS(ON) (On-Resistance)**:
- **12mΩ @ VGS = 4.5V**: On-resistance at a gate voltage of 4.5V.
- **11mΩ @ VGS = 10V**: On-resistance at a gate voltage of 10V.
- **Description**: Low on-resistance helps reduce power losses and improve power transfer efficiency.
7. **ID (Continuous Drain Current)**: 75A
- **Description**: The maximum current that a MOSFET can handle continuously under specified conditions.
8. **Technology**: Trench
- **Description**: Trench technology reduces conduction losses and improves switching characteristics through optimized design, thereby improving the overall performance of MOSFET.
Domain and module applications：
Application Examples
1. **Power Converters**:
- BUZ100S-VB is ideal for power converters such as DC-DC converters and high-efficiency power supply modules. Its low on-resistance and high current capability ensure efficient power conversion and minimal energy loss, suitable for power supply designs that require high power and high efficiency.
2. **Motor Drive**:
- In motor drive applications, including motor control systems for electric vehicles and industrial motor drives, BUZ100S-VB provides high current handling capability and low on-resistance, which helps to accurately control motor speed and improve the overall performance and efficiency of the system.
3. **Automotive Power Management**:
- This MOSFET is suitable for automotive power management systems such as battery management systems and power distribution modules. Its high current handling capability and low on-resistance are critical to the stability and reliability of high-power power systems.
4. **Battery Management Systems**:
- In battery management systems (BMS), especially electric vehicles and energy storage systems, BUZ100S-VB provides efficient power switching and low resistance, helping to optimize the battery charging and discharging process and improve system safety and performance.
5. **Communication Equipment**:
- In communication equipment, such as base stations and RF amplifiers, BUZ100S-VB's low power consumption and high current capability help maintain signal integrity and optimize power usage in communication infrastructure.
6. **Consumer Electronics**:
- In consumer electronics, such as laptops, tablets, and smartphones, BUZ100S-VB's efficient power management and compact design are important for extending battery life and improving device performance.
In summary, the BUZ100S-VB MOSFET is an efficient and reliable choice in power converters, motor drives, battery management, automotive power management, communication equipment and consumer electronics with its low on-resistance, high current capability and advanced trench technology.
1. **Power Converters**:
- BUZ100S-VB is ideal for power converters such as DC-DC converters and high-efficiency power supply modules. Its low on-resistance and high current capability ensure efficient power conversion and minimal energy loss, suitable for power supply designs that require high power and high efficiency.
2. **Motor Drive**:
- In motor drive applications, including motor control systems for electric vehicles and industrial motor drives, BUZ100S-VB provides high current handling capability and low on-resistance, which helps to accurately control motor speed and improve the overall performance and efficiency of the system.
3. **Automotive Power Management**:
- This MOSFET is suitable for automotive power management systems such as battery management systems and power distribution modules. Its high current handling capability and low on-resistance are critical to the stability and reliability of high-power power systems.
4. **Battery Management Systems**:
- In battery management systems (BMS), especially electric vehicles and energy storage systems, BUZ100S-VB provides efficient power switching and low resistance, helping to optimize the battery charging and discharging process and improve system safety and performance.
5. **Communication Equipment**:
- In communication equipment, such as base stations and RF amplifiers, BUZ100S-VB's low power consumption and high current capability help maintain signal integrity and optimize power usage in communication infrastructure.
6. **Consumer Electronics**:
- In consumer electronics, such as laptops, tablets, and smartphones, BUZ100S-VB's efficient power management and compact design are important for extending battery life and improving device performance.
In summary, the BUZ100S-VB MOSFET is an efficient and reliable choice in power converters, motor drives, battery management, automotive power management, communication equipment and consumer electronics with its low on-resistance, high current capability and advanced trench technology.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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