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BUK9Y8R5-80E-VB Product details
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Product Introduction
**BUK9Y8R5-80E-VB** is a high-performance single-channel N-channel MOSFET that uses advanced Trench technology. This MOSFET is packaged in SOT669 and is suitable for high voltage and high current applications, with good switching characteristics and low on-resistance. Its maximum drain-source voltage (VDS) is 80V and the gate-source voltage (VGS) range is ±20V. The gate threshold voltage (Vth) of the device is 1.4V, and it can be turned on at a lower gate-source voltage. At a gate-source voltage of 4.5V, the on-resistance (RDS(ON)) is 7.2mΩ, and at 10V, the on-resistance is reduced to 6mΩ. The maximum drain current (ID) is 90A. These characteristics make BUK9Y8R5-80E-VB very suitable for power management and switching applications that require high efficiency and high reliability.
**BUK9Y8R5-80E-VB** is a high-performance single-channel N-channel MOSFET that uses advanced Trench technology. This MOSFET is packaged in SOT669 and is suitable for high voltage and high current applications, with good switching characteristics and low on-resistance. Its maximum drain-source voltage (VDS) is 80V and the gate-source voltage (VGS) range is ±20V. The gate threshold voltage (Vth) of the device is 1.4V, and it can be turned on at a lower gate-source voltage. At a gate-source voltage of 4.5V, the on-resistance (RDS(ON)) is 7.2mΩ, and at 10V, the on-resistance is reduced to 6mΩ. The maximum drain current (ID) is 90A. These characteristics make BUK9Y8R5-80E-VB very suitable for power management and switching applications that require high efficiency and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
- **Model**: BUK9Y8R5-80E-VB
- **Package**: SOT669
- **Configuration**: Single channel N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 7.2mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Maximum drain current (ID)**: 90A
- **Technology**: Trench
- **Model**: BUK9Y8R5-80E-VB
- **Package**: SOT669
- **Configuration**: Single channel N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 7.2mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Maximum drain current (ID)**: 90A
- **Technology**: Trench
Domain and module applications：
Applications and modules
**BUK9Y8R5-80E-VB** MOSFET is widely used in many fields and modules, here are some specific examples:
1. **Power Management System**:
- In power management systems, this MOSFET can be used in efficient DC-DC converters to improve power conversion efficiency and reduce power losses.
- Due to its low on-resistance, it can significantly reduce energy losses during the conversion process and optimize overall system efficiency.
2. **Switching Power Supply**:
- In switching power supply applications, BUK9Y8R5-80E-VB is used as a switching element, capable of handling high power loads and ensuring stable power output.
- Its high current capability and low on-resistance make it suitable for a variety of applications requiring high power output, such as computer power supplies and industrial power supplies.
3. **Motor Control**:
- This MOSFET can be used in motor drive systems to provide precise current control and efficient switching performance, suitable for industrial motor and automotive motor control.
- High current handling capability and low on-resistance make it excel in high-power motor control, meeting high requirements for current switching.
4. **Automotive Electronics**:
- In automotive electronic systems, BUK9Y8R5-80E-VB can be used for power distribution, battery management and motor drive modules.
- Its high current capability and low power consumption characteristics can improve the reliability and efficiency of automotive systems, meeting the strict performance requirements of automotive electronic systems.
5. **Industrial Automation**:
- In industrial automation systems, this MOSFET can be used for power switching and control circuits to improve the operating stability and efficiency of equipment.
- Its low on-resistance and high current carrying capacity make it suitable for power management and drive control of various industrial equipment.
These application examples demonstrate the importance of the BUK9Y8R5-80E-VB MOSFET in multiple areas such as efficient power management, switching power supplies, motor control, etc., and can meet the needs of various high-power and high-reliability applications.
**BUK9Y8R5-80E-VB** MOSFET is widely used in many fields and modules, here are some specific examples:
1. **Power Management System**:
- In power management systems, this MOSFET can be used in efficient DC-DC converters to improve power conversion efficiency and reduce power losses.
- Due to its low on-resistance, it can significantly reduce energy losses during the conversion process and optimize overall system efficiency.
2. **Switching Power Supply**:
- In switching power supply applications, BUK9Y8R5-80E-VB is used as a switching element, capable of handling high power loads and ensuring stable power output.
- Its high current capability and low on-resistance make it suitable for a variety of applications requiring high power output, such as computer power supplies and industrial power supplies.
3. **Motor Control**:
- This MOSFET can be used in motor drive systems to provide precise current control and efficient switching performance, suitable for industrial motor and automotive motor control.
- High current handling capability and low on-resistance make it excel in high-power motor control, meeting high requirements for current switching.
4. **Automotive Electronics**:
- In automotive electronic systems, BUK9Y8R5-80E-VB can be used for power distribution, battery management and motor drive modules.
- Its high current capability and low power consumption characteristics can improve the reliability and efficiency of automotive systems, meeting the strict performance requirements of automotive electronic systems.
5. **Industrial Automation**:
- In industrial automation systems, this MOSFET can be used for power switching and control circuits to improve the operating stability and efficiency of equipment.
- Its low on-resistance and high current carrying capacity make it suitable for power management and drive control of various industrial equipment.
These application examples demonstrate the importance of the BUK9Y8R5-80E-VB MOSFET in multiple areas such as efficient power management, switching power supplies, motor control, etc., and can meet the needs of various high-power and high-reliability applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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