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BUK9Y7R2-60E-VB Product details
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BUK9Y7R2-60E-VB MOSFET Product Introduction
**Model**: BUK9Y7R2-60E-VB
**Package**: SOT669
**Configuration**: Single N-channel
**Maximum drain-source voltage (VDS)**: 60V
**Maximum gate-source voltage (VGS)**: ±20V
**Threshold voltage (Vth)**: 2.4V
**On-resistance (RDS(ON))**:
- 3.48mΩ@VGS=4.5V
- 2.9mΩ@VGS=10V
**Maximum drain current (ID)**: 100A
**Technology**: Trench
BUK9Y7R2-60E-VB It is a high-performance N-channel power MOSFET that uses advanced trench technology to provide low on-resistance and high current capability. Its high withstand voltage of 60V and high current capability of 100A make it an excellent performer in applications that require high efficiency and reliability.
**Model**: BUK9Y7R2-60E-VB
**Package**: SOT669
**Configuration**: Single N-channel
**Maximum drain-source voltage (VDS)**: 60V
**Maximum gate-source voltage (VGS)**: ±20V
**Threshold voltage (Vth)**: 2.4V
**On-resistance (RDS(ON))**:
- 3.48mΩ@VGS=4.5V
- 2.9mΩ@VGS=10V
**Maximum drain current (ID)**: 100A
**Technology**: Trench
BUK9Y7R2-60E-VB It is a high-performance N-channel power MOSFET that uses advanced trench technology to provide low on-resistance and high current capability. Its high withstand voltage of 60V and high current capability of 100A make it an excellent performer in applications that require high efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 2.4V | 100A | 2.9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 2.4V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 2.4V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
- **Package type**: SOT669
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.4V (typical)
- **On-resistance (RDS(ON))**:
- 3.48mΩ@VGS=4.5V
- 2.9mΩ@VGS=10V
- **Maximum drain current (ID)**: 100A
- **Depletion current (IDSS)**: <1μA @ VDS=60V, VGS=0V
- **Gate leakage current (IGSS)**: ±100nA @ VGS=±20V
- **Power dissipation (Ptot)**: 2.0W
- **Junction-to-ambient thermal resistance (RθJA)**: 62.5°C/W
- **Junction-to-case thermal resistance (RθJC)**: 1.6°C/W
- **Operating junction temperature range**: -55°C to +150°C
- **Storage temperature range**: -55°C to +150°C
- **Technology**: Trench
- **Package type**: SOT669
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.4V (typical)
- **On-resistance (RDS(ON))**:
- 3.48mΩ@VGS=4.5V
- 2.9mΩ@VGS=10V
- **Maximum drain current (ID)**: 100A
- **Depletion current (IDSS)**: <1μA @ VDS=60V, VGS=0V
- **Gate leakage current (IGSS)**: ±100nA @ VGS=±20V
- **Power dissipation (Ptot)**: 2.0W
- **Junction-to-ambient thermal resistance (RθJA)**: 62.5°C/W
- **Junction-to-case thermal resistance (RθJC)**: 1.6°C/W
- **Operating junction temperature range**: -55°C to +150°C
- **Storage temperature range**: -55°C to +150°C
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **Power management**: BUK9Y7R2-60E-VB MOSFET is widely used in power management, including DC-DC converters and switching power supplies. Its low on-resistance and high current capability can significantly improve power conversion efficiency, reduce energy loss, and support high-power applications.
2. **Motor drive**: This MOSFET is suitable for various motor drive systems, such as control circuits of DC motors, stepper motors, and brushless DC motors. The high current capability ensures stable drive of the motor under high load conditions, providing smooth control performance.
3. **Automotive electronics**: In automotive electronics applications, such as vehicle power distribution systems, LED lighting control, and vehicle battery management systems, the high withstand voltage and low on-resistance characteristics of BUK9Y7R2-60E-VB can provide reliable power management and stability.
4. **Consumer electronics**: This MOSFET is also suitable for power management systems of consumer electronics such as smartphones, laptops, and tablets. Its high performance and reliability make it excellent in battery charging, power distribution and energy-saving applications.
5. **Industrial Automation**: In the field of industrial automation, such as power distribution, load switching and control circuits, BUK9Y7R2-60E-VB is able to handle high current loads and provide stable power control, effectively improving the efficiency and reliability of industrial systems.
BUK9Y7R2-60E-VB is a high-performance power MOSFET that exhibits excellent performance in a variety of high current and high-efficiency applications with its high voltage withstand capability and low on-resistance, suitable for all aspects of modern electronic systems.
1. **Power management**: BUK9Y7R2-60E-VB MOSFET is widely used in power management, including DC-DC converters and switching power supplies. Its low on-resistance and high current capability can significantly improve power conversion efficiency, reduce energy loss, and support high-power applications.
2. **Motor drive**: This MOSFET is suitable for various motor drive systems, such as control circuits of DC motors, stepper motors, and brushless DC motors. The high current capability ensures stable drive of the motor under high load conditions, providing smooth control performance.
3. **Automotive electronics**: In automotive electronics applications, such as vehicle power distribution systems, LED lighting control, and vehicle battery management systems, the high withstand voltage and low on-resistance characteristics of BUK9Y7R2-60E-VB can provide reliable power management and stability.
4. **Consumer electronics**: This MOSFET is also suitable for power management systems of consumer electronics such as smartphones, laptops, and tablets. Its high performance and reliability make it excellent in battery charging, power distribution and energy-saving applications.
5. **Industrial Automation**: In the field of industrial automation, such as power distribution, load switching and control circuits, BUK9Y7R2-60E-VB is able to handle high current loads and provide stable power control, effectively improving the efficiency and reliability of industrial systems.
BUK9Y7R2-60E-VB is a high-performance power MOSFET that exhibits excellent performance in a variety of high current and high-efficiency applications with its high voltage withstand capability and low on-resistance, suitable for all aspects of modern electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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