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BUK9Y72-80E-VB Product details
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Product Introduction
**BUK9Y72-80E-VB** is a high-performance N-channel MOSFET in SOT669 package. Designed for high voltage and high current applications, this MOSFET uses Trench technology to achieve low on-resistance and high current carrying capacity. Its wide VDS and VGS range enables it to adapt to a variety of high-power and high-efficiency power management tasks, especially for applications that require high voltage tolerance and low power consumption.
**BUK9Y72-80E-VB** is a high-performance N-channel MOSFET in SOT669 package. Designed for high voltage and high current applications, this MOSFET uses Trench technology to achieve low on-resistance and high current carrying capacity. Its wide VDS and VGS range enables it to adapt to a variety of high-power and high-efficiency power management tasks, especially for applications that require high voltage tolerance and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
- **Model**: BUK9Y72-80E-VB
- **Package**: SOT669
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 7.2mΩ (VGS=4.5V)
- 6mΩ (VGS=10V)
- **Maximum drain current (ID)**: 90A
- **Technology**: Trench technology
- **Model**: BUK9Y72-80E-VB
- **Package**: SOT669
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 7.2mΩ (VGS=4.5V)
- 6mΩ (VGS=10V)
- **Maximum drain current (ID)**: 90A
- **Technology**: Trench technology
Domain and module applications：
Applications and Module Examples
1. **High Voltage Power Management**:
BUK9Y72-80E-VB is ideal for high voltage power management systems such as DC-DC converters and AC-DC adapters due to its high VDS (80V) and low RDS(ON). These applications require MOSFETs that can handle high voltages without sacrificing switching efficiency and power dissipation.
2. **Electric Vehicle Motor Drive**:
In electric vehicle motor drives and battery management systems, this MOSFET is capable of handling high voltages and high currents, making it suitable for scenarios that require efficient power switching. Its low on-resistance helps improve the performance and range of electric vehicles.
3. **Industrial Power Switch**:
BUK9Y72-80E-VB can be used in a variety of industrial power switching applications, including motor drives and electric actuators. Its high current carrying capability and low on-resistance ensure reliability and efficiency under high power loads.
4. **Communication Equipment**:
In the power management of communication equipment, this MOSFET is able to handle high voltage loads, such as base station power supplies and signal amplifiers. Its high voltage tolerance and low power consumption make it an ideal choice for these critical applications.
The high voltage and high current characteristics of BUK9Y72-80E-VB make it suitable for a variety of applications requiring high voltage, high power and high efficiency, and can provide reliable performance and excellent power management in different electronic systems.
1. **High Voltage Power Management**:
BUK9Y72-80E-VB is ideal for high voltage power management systems such as DC-DC converters and AC-DC adapters due to its high VDS (80V) and low RDS(ON). These applications require MOSFETs that can handle high voltages without sacrificing switching efficiency and power dissipation.
2. **Electric Vehicle Motor Drive**:
In electric vehicle motor drives and battery management systems, this MOSFET is capable of handling high voltages and high currents, making it suitable for scenarios that require efficient power switching. Its low on-resistance helps improve the performance and range of electric vehicles.
3. **Industrial Power Switch**:
BUK9Y72-80E-VB can be used in a variety of industrial power switching applications, including motor drives and electric actuators. Its high current carrying capability and low on-resistance ensure reliability and efficiency under high power loads.
4. **Communication Equipment**:
In the power management of communication equipment, this MOSFET is able to handle high voltage loads, such as base station power supplies and signal amplifiers. Its high voltage tolerance and low power consumption make it an ideal choice for these critical applications.
The high voltage and high current characteristics of BUK9Y72-80E-VB make it suitable for a variety of applications requiring high voltage, high power and high efficiency, and can provide reliable performance and excellent power management in different electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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