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BUK9Y58-75B-VB Product details
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BUK9Y58-75B-VB MOSFET Product Introduction
BUK9Y58-75B-VB is a high-performance N-channel MOSFET designed in SOT669 package. This MOSFET is designed for applications requiring high current handling and efficient power management. It has a maximum drain-source voltage (VDS) of 80V and supports a gate-source voltage (VGS) range of ±20V. The threshold voltage (Vth) of the device is 1.4V, ensuring reliable switching operation. The on-resistance (RDS(ON)) of BUK9Y58-75B-VB is 7.2mΩ at VGS = 4.5V and 6mΩ at VGS = 10V, supporting a continuous drain current (ID) of up to 90A. Using advanced Trench technology, it provides low conduction loss and efficient switching performance, suitable for a variety of applications with high power and high efficiency requirements.
BUK9Y58-75B-VB is a high-performance N-channel MOSFET designed in SOT669 package. This MOSFET is designed for applications requiring high current handling and efficient power management. It has a maximum drain-source voltage (VDS) of 80V and supports a gate-source voltage (VGS) range of ±20V. The threshold voltage (Vth) of the device is 1.4V, ensuring reliable switching operation. The on-resistance (RDS(ON)) of BUK9Y58-75B-VB is 7.2mΩ at VGS = 4.5V and 6mΩ at VGS = 10V, supporting a continuous drain current (ID) of up to 90A. Using advanced Trench technology, it provides low conduction loss and efficient switching performance, suitable for a variety of applications with high power and high efficiency requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
1. **Package**: SOT669
- **Description**: Compact and thermally efficient package, suitable for space-constrained applications and effective heat dissipation requirements.
2. **Configuration**: Single N-channel
- **Description**: Single channel configuration, easy to integrate into various electronic circuits.
3. **VDS (Drain-Source Voltage)**: 80V
- **Description**: The maximum voltage between the drain and source of the MOSFET in the off state.
4. **VGS (Gate-Source Voltage)**: ±20V
- **Description**: The maximum allowable voltage between the gate and the source, used to control the switching state of the MOSFET.
5. **Vth (Threshold Voltage)**: 1.4V
- **Description**: The gate voltage required to turn on the MOSFET so that conduction begins between the drain and source.
6. **RDS(ON) (On-Resistance)**:
- **7.2mΩ @ VGS = 4.5V**: The resistance between the drain and source when the gate voltage is 4.5V.
- **6mΩ @ VGS = 10V**: The resistance between the drain and source when the gate voltage is 10V.
- **Description**: Low on-resistance ensures minimal power loss and efficient operation.
7. **ID (Continuous Drain Current)**: 90A
- **Description**: The maximum current that the MOSFET can handle continuously under specified conditions.
8. **Technology**: Trench
- **Description**: Trench technology improves the overall performance of MOSFET by reducing conduction losses and improving switching characteristics.
1. **Package**: SOT669
- **Description**: Compact and thermally efficient package, suitable for space-constrained applications and effective heat dissipation requirements.
2. **Configuration**: Single N-channel
- **Description**: Single channel configuration, easy to integrate into various electronic circuits.
3. **VDS (Drain-Source Voltage)**: 80V
- **Description**: The maximum voltage between the drain and source of the MOSFET in the off state.
4. **VGS (Gate-Source Voltage)**: ±20V
- **Description**: The maximum allowable voltage between the gate and the source, used to control the switching state of the MOSFET.
5. **Vth (Threshold Voltage)**: 1.4V
- **Description**: The gate voltage required to turn on the MOSFET so that conduction begins between the drain and source.
6. **RDS(ON) (On-Resistance)**:
- **7.2mΩ @ VGS = 4.5V**: The resistance between the drain and source when the gate voltage is 4.5V.
- **6mΩ @ VGS = 10V**: The resistance between the drain and source when the gate voltage is 10V.
- **Description**: Low on-resistance ensures minimal power loss and efficient operation.
7. **ID (Continuous Drain Current)**: 90A
- **Description**: The maximum current that the MOSFET can handle continuously under specified conditions.
8. **Technology**: Trench
- **Description**: Trench technology improves the overall performance of MOSFET by reducing conduction losses and improving switching characteristics.
Domain and module applications：
Application Examples
1. **Automotive Power Systems**:
- The BUK9Y58-75B-VB is ideal for automotive power systems, such as battery management systems and power distribution modules for electric vehicles. Its high current handling capability and low on-resistance help effectively manage high-power loads in vehicle power systems, improving overall system efficiency and reliability.
2. **Power Converters**:
- In power converters, including DC-DC converters and high-efficiency power supply modules, the BUK9Y58-75B-VB's low on-resistance and high current capability make it an ideal choice. It ensures efficient power conversion, reducing energy loss and heat generation.
3. **Motor Control**:
- This MOSFET is suitable for motor control applications, such as motor drives and industrial motor control systems. Its high current handling capability and low on-resistance help accurately control motor speed, improving motor performance and efficiency.
4. **Battery Management System**:
- In battery management systems (BMS), especially in electric vehicles and energy storage systems, the BUK9Y58-75B-VB provides efficient power switching and low resistance, which is critical to optimizing the battery charging and discharging process.
5. **Communication Equipment**:
- In communication equipment such as base stations and RF amplifiers, the high-speed switching capability and low power consumption characteristics of the MOSFET help maintain signal integrity and optimize power usage in communication equipment.
6. **Consumer Electronics**:
- The MOSFET can also be used in a variety of consumer electronics such as laptops, tablets and smartphones, where efficient power management and compact packaging design are critical to extend battery life and enhance device performance.
In summary, the BUK9Y58-75B-VB MOSFET is an efficient choice for automotive, power converters, motor control, battery management, communication equipment and consumer electronics with its low on-resistance, high current capability and advanced trench technology.
1. **Automotive Power Systems**:
- The BUK9Y58-75B-VB is ideal for automotive power systems, such as battery management systems and power distribution modules for electric vehicles. Its high current handling capability and low on-resistance help effectively manage high-power loads in vehicle power systems, improving overall system efficiency and reliability.
2. **Power Converters**:
- In power converters, including DC-DC converters and high-efficiency power supply modules, the BUK9Y58-75B-VB's low on-resistance and high current capability make it an ideal choice. It ensures efficient power conversion, reducing energy loss and heat generation.
3. **Motor Control**:
- This MOSFET is suitable for motor control applications, such as motor drives and industrial motor control systems. Its high current handling capability and low on-resistance help accurately control motor speed, improving motor performance and efficiency.
4. **Battery Management System**:
- In battery management systems (BMS), especially in electric vehicles and energy storage systems, the BUK9Y58-75B-VB provides efficient power switching and low resistance, which is critical to optimizing the battery charging and discharging process.
5. **Communication Equipment**:
- In communication equipment such as base stations and RF amplifiers, the high-speed switching capability and low power consumption characteristics of the MOSFET help maintain signal integrity and optimize power usage in communication equipment.
6. **Consumer Electronics**:
- The MOSFET can also be used in a variety of consumer electronics such as laptops, tablets and smartphones, where efficient power management and compact packaging design are critical to extend battery life and enhance device performance.
In summary, the BUK9Y58-75B-VB MOSFET is an efficient choice for automotive, power converters, motor control, battery management, communication equipment and consumer electronics with its low on-resistance, high current capability and advanced trench technology.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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