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BUK9Y53-100B-VB Product details
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1. Product Introduction
**BUK9Y53-100B-VB** is a high-performance N-channel MOSFET manufactured using advanced trench technology and packaged in SOT669. This MOSFET has high drain-source voltage capability and low on-resistance, suitable for switching applications requiring high voltage and high current. Its low on-resistance can maintain high efficiency at higher gate drive voltages, making it suitable for power management and high-power switching applications.
**BUK9Y53-100B-VB** is a high-performance N-channel MOSFET manufactured using advanced trench technology and packaged in SOT669. This MOSFET has high drain-source voltage capability and low on-resistance, suitable for switching applications requiring high voltage and high current. Its low on-resistance can maintain high efficiency at higher gate drive voltages, making it suitable for power management and high-power switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | 11.6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
2. Detailed parameter description
- **Model**: BUK9Y53-100B-VB
- **Package**: SOT669
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 13.92mΩ @ VGS = 4.5V
- 11.6mΩ @ VGS = 10V
- **Drain current (ID)**: 69A
- **Technology**: Trench
- **Model**: BUK9Y53-100B-VB
- **Package**: SOT669
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 13.92mΩ @ VGS = 4.5V
- 11.6mΩ @ VGS = 10V
- **Drain current (ID)**: 69A
- **Technology**: Trench
Domain and module applications：
3. Applicable fields and modules
**BUK9Y53-100B-VB**'s design features enable it to excel in the following fields and modules:
1. **Power management**: Applicable to various power management modules, such as high-efficiency power adapters, DC-DC converters, and battery management systems. Due to its high drain-source voltage and low on-resistance, it can effectively reduce power loss and improve the overall efficiency and stability of the power system.
2. **Electric vehicles**: In the battery management system and motor drive control of electric vehicles, this MOSFET can handle higher voltages and currents, ensuring reliable performance and long life. It is suitable for battery switching control and motor power regulation, and can meet the high power and high efficiency requirements of electric vehicles.
3. **Industrial control**: In industrial control systems, such as inverters, servo drives, and motor control systems, BUK9Y53-100B-VB can be used for high-power switching applications. Its low on-resistance and high current handling capability can improve the response speed and reliability of the system.
4. **High-power LED driver**: Used in high-power LED driver circuits, it can provide stable current control and efficient switching performance, suitable for high-power lighting systems and lighting controllers.
5. **Switching power supply**: In a switching power supply (SMPS), this MOSFET can be used in switching regulators and synchronous rectifiers to improve efficiency and reduce heat generation. Its high drain-source voltage and low on-resistance characteristics make it excel in high-frequency switching applications.
Through its high voltage tolerance, low on-resistance and high current handling capability, BUK9Y53-100B-VB can play a key role in a variety of high-performance, high-efficiency applications to meet the power and switching needs of different fields.
**BUK9Y53-100B-VB**'s design features enable it to excel in the following fields and modules:
1. **Power management**: Applicable to various power management modules, such as high-efficiency power adapters, DC-DC converters, and battery management systems. Due to its high drain-source voltage and low on-resistance, it can effectively reduce power loss and improve the overall efficiency and stability of the power system.
2. **Electric vehicles**: In the battery management system and motor drive control of electric vehicles, this MOSFET can handle higher voltages and currents, ensuring reliable performance and long life. It is suitable for battery switching control and motor power regulation, and can meet the high power and high efficiency requirements of electric vehicles.
3. **Industrial control**: In industrial control systems, such as inverters, servo drives, and motor control systems, BUK9Y53-100B-VB can be used for high-power switching applications. Its low on-resistance and high current handling capability can improve the response speed and reliability of the system.
4. **High-power LED driver**: Used in high-power LED driver circuits, it can provide stable current control and efficient switching performance, suitable for high-power lighting systems and lighting controllers.
5. **Switching power supply**: In a switching power supply (SMPS), this MOSFET can be used in switching regulators and synchronous rectifiers to improve efficiency and reduce heat generation. Its high drain-source voltage and low on-resistance characteristics make it excel in high-frequency switching applications.
Through its high voltage tolerance, low on-resistance and high current handling capability, BUK9Y53-100B-VB can play a key role in a variety of high-performance, high-efficiency applications to meet the power and switching needs of different fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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