BUK9Y4R8-60E-VB Product details
Product introduction:
**BUK9Y4R8-60E-VB** is a high-performance single-channel N-channel MOSFET manufactured using advanced Trench technology with extremely low on-resistance and superior current handling capability. This MOSFET is packaged in SOT669 and can withstand a drain-source voltage (VDS) of up to 60V and a gate-source voltage (VGS) of ±20V. Its gate threshold voltage (Vth) is 2.4V, and at a gate-source voltage of 4.5V, the on-resistance (RDS(ON)) is 3.48mΩ, while at a gate-source voltage of 10V, the on-resistance is reduced to 2.9mΩ, and the maximum drain current (ID) can reach 100A. This feature makes this MOSFET very suitable for high-power applications and efficient power management.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 2.4V | 100A | 2.9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 2.4V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 2.4V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
- **Model**: BUK9Y4R8-60E-VB
- **Package**: SOT669
- **Configuration**: Single channel N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.4V
- **On-resistance (RDS(ON))**:
- 3.48mΩ @ VGS=4.5V
- 2.9mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications:
**BUK9Y4R8-60E-VB** MOSFET is suitable for multiple fields and modules, including:
1. **Power management system**:
- In an efficient power management system, BUK9Y4R8-60E-VB can be used as a switching element in a DC-DC converter to help improve the system's energy efficiency and reduce power consumption.
- Its low on-resistance characteristics make power conversion more efficient and reduce energy loss.
2. **Switching power supply**:
- In a switching power supply module, the high current capability and low on-resistance of this MOSFET make it an ideal choice to handle high power loads and ensure stable power output.
- Suitable for applications such as computer power supply, communication equipment power supply, etc.
3. **Motor control**:
- BUK9Y4R8-60E-VB can be used in motor drive systems, providing precise current control and efficient switching performance, suitable for industrial motor and automotive motor control.
- High current handling capability makes it suitable for driving high-power motors.
4. **Automotive electronics**:
- In the automotive electronics field, this MOSFET can be used in modules such as power distribution, battery management and drive control.
- Its high current handling capability and low power consumption characteristics can improve the reliability and efficiency of automotive systems.
5. **Industrial automation**:
- BUK9Y4R8-60E-VB is suitable for power switches and control circuits in industrial automation systems, providing stable and efficient operation performance.
- Its low on-resistance and high current capability make it suitable for power management of industrial equipment and machines.
From the above application examples, it can be seen that the BUK9Y4R8-60E-VB MOSFET has a wide range of applicability in multiple fields such as high-power power management, switching power supplies, motor control, etc., meeting the needs for efficient and reliable current handling.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image