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BUK9Y43-60E-VB Product details
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BUK9Y43-60E-VB MOSFET Product Introduction
**Model**: BUK9Y43-60E-VB
**Package**: SOT669
**Configuration**: Single N-channel
**Maximum drain-source voltage (VDS)**: 60V
**Maximum gate-source voltage (VGS)**: ±20V
**Threshold voltage (Vth)**: 1V to 3V
**On-resistance (RDS(ON))**:
- 7.8mΩ@VGS=4.5V
- 6.2mΩ@VGS=10V
**Maximum drain current (ID)**: 64A
**Technology**: Trench
BUK9Y43-60E-VB It is a high-performance N-channel power MOSFET that uses advanced trench technology to provide low on-resistance and high current handling capability. Its high voltage withstand capability and low on-resistance make it suitable for a variety of high-efficiency power supply and switching applications.
**Model**: BUK9Y43-60E-VB
**Package**: SOT669
**Configuration**: Single N-channel
**Maximum drain-source voltage (VDS)**: 60V
**Maximum gate-source voltage (VGS)**: ±20V
**Threshold voltage (Vth)**: 1V to 3V
**On-resistance (RDS(ON))**:
- 7.8mΩ@VGS=4.5V
- 6.2mΩ@VGS=10V
**Maximum drain current (ID)**: 64A
**Technology**: Trench
BUK9Y43-60E-VB It is a high-performance N-channel power MOSFET that uses advanced trench technology to provide low on-resistance and high current handling capability. Its high voltage withstand capability and low on-resistance make it suitable for a variety of high-efficiency power supply and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 1~3V | 64A | 6.2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 1~3V | 64A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 1~3V | 64A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
- **Package type**: SOT669
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1V to 3V
- **On-resistance (RDS(ON))**:
- 7.8mΩ@VGS=4.5V
- 6.2mΩ@VGS=10V
- **Maximum drain current (ID)**: 64A
- **Depletion current (IDSS)**: <1μA @ VDS=60V, VGS=0V
- **Gate leakage current (IGSS)**: ±100nA @ VGS=±20V
- **Power dissipation (Ptot)**: 2.0W
- **Junction-to-ambient thermal resistance (RθJA)**: 62.5°C/W
- **Junction-to-case thermal resistance (RθJC)**: 1.6°C/W
- **Operating junction temperature range**: -55°C to +150°C
- **Storage temperature range**: -55°C to +150°C
- **Technology**: Trench
- **Package type**: SOT669
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1V to 3V
- **On-resistance (RDS(ON))**:
- 7.8mΩ@VGS=4.5V
- 6.2mΩ@VGS=10V
- **Maximum drain current (ID)**: 64A
- **Depletion current (IDSS)**: <1μA @ VDS=60V, VGS=0V
- **Gate leakage current (IGSS)**: ±100nA @ VGS=±20V
- **Power dissipation (Ptot)**: 2.0W
- **Junction-to-ambient thermal resistance (RθJA)**: 62.5°C/W
- **Junction-to-case thermal resistance (RθJC)**: 1.6°C/W
- **Operating junction temperature range**: -55°C to +150°C
- **Storage temperature range**: -55°C to +150°C
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power management**: BUK9Y43-60E-VB MOSFET performs well in power management systems, especially in high voltage DC-DC converters and switching power supplies. Its low on-resistance and high current capability can effectively improve power conversion efficiency and reduce power loss.
2. **Motor drive**: In motor drive systems, this MOSFET is suitable for various motor control circuits, including DC motors, stepper motors, and brushless DC motors. Its high current handling capability ensures the stability and efficiency of the motor drive system.
3. **Automotive electronics**: In the field of automotive electronics, BUK9Y43-60E-VB can be used for vehicle power management, LED lighting control, and vehicle battery management systems. Its high withstand voltage and low on-resistance characteristics ensure the stable operation of automotive electronic equipment in complex environments.
4. **Consumer Electronics**: In the power management circuits of consumer electronics such as smartphones, laptops and tablets, this MOSFET can provide efficient power control and conversion, supporting high-performance battery charging and power distribution systems.
5. **Industrial Automation**: Various applications in industrial automation systems, such as power distribution, load switching and control circuits, can take advantage of the high current and low on-resistance characteristics of the BUK9Y43-60E-VB to improve system efficiency and reliability.
BUK9Y43-60E-VB is an efficient and reliable power MOSFET suitable for a variety of high voltage and high current applications, providing excellent performance support for modern electronic systems.
1. **Power management**: BUK9Y43-60E-VB MOSFET performs well in power management systems, especially in high voltage DC-DC converters and switching power supplies. Its low on-resistance and high current capability can effectively improve power conversion efficiency and reduce power loss.
2. **Motor drive**: In motor drive systems, this MOSFET is suitable for various motor control circuits, including DC motors, stepper motors, and brushless DC motors. Its high current handling capability ensures the stability and efficiency of the motor drive system.
3. **Automotive electronics**: In the field of automotive electronics, BUK9Y43-60E-VB can be used for vehicle power management, LED lighting control, and vehicle battery management systems. Its high withstand voltage and low on-resistance characteristics ensure the stable operation of automotive electronic equipment in complex environments.
4. **Consumer Electronics**: In the power management circuits of consumer electronics such as smartphones, laptops and tablets, this MOSFET can provide efficient power control and conversion, supporting high-performance battery charging and power distribution systems.
5. **Industrial Automation**: Various applications in industrial automation systems, such as power distribution, load switching and control circuits, can take advantage of the high current and low on-resistance characteristics of the BUK9Y43-60E-VB to improve system efficiency and reliability.
BUK9Y43-60E-VB is an efficient and reliable power MOSFET suitable for a variety of high voltage and high current applications, providing excellent performance support for modern electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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