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BUK9Y3R5-40E-VB Product details
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Product Introduction
**BUK9Y3R5-40E-VB** is a high-performance N-channel MOSFET in a SOT669 package, designed for applications requiring high current and low on-resistance. This MOSFET uses Trench technology to maintain extremely low on-resistance (RDS(ON)) under high current loads, thereby improving switching efficiency and reducing power consumption. It is designed to meet the needs of efficient power management and high load current applications.
**BUK9Y3R5-40E-VB** is a high-performance N-channel MOSFET in a SOT669 package, designed for applications requiring high current and low on-resistance. This MOSFET uses Trench technology to maintain extremely low on-resistance (RDS(ON)) under high current loads, thereby improving switching efficiency and reducing power consumption. It is designed to meet the needs of efficient power management and high load current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
- **Model**: BUK9Y3R5-40E-VB
- **Package**: SOT669
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 2.4mΩ (VGS=4.5V)
- 2mΩ (VGS=10V)
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench technology
- **Model**: BUK9Y3R5-40E-VB
- **Package**: SOT669
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 2.4mΩ (VGS=4.5V)
- 2mΩ (VGS=10V)
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench technology
Domain and module applications：
Applications and Module Examples
1. **Power Conversion**:
BUK9Y3R5-40E-VB excels in DC-DC converters and power switch modules. Its low RDS(ON) and high current carrying capability enable it to efficiently handle power conversion tasks, reducing power consumption and improving the overall efficiency of the system.
2. **Electric Vehicle Drive**:
In the motor drive system of electric vehicles, this MOSFET can be used for motor switching and battery management. Its high current capability and low on-resistance help electric vehicles achieve higher efficiency and longer driving range.
3. **Industrial Automation**:
In industrial automation equipment such as electric actuators and high-power power supplies, the characteristics of BUK9Y3R5-40E-VB make it an ideal choice. It can withstand large currents and maintain low power consumption, suitable for high-load applications.
4. **Communication Infrastructure**:
In communication equipment, especially base station power management and high-power RF amplifiers, this MOSFET can effectively handle high current loads and maintain stable performance. Its low RDS(ON) characteristics help reduce energy loss and improve system reliability.
With its efficient current handling capability and low on-resistance, BUK9Y3R5-40E-VB is suitable for a variety of high-current, high-efficiency electronic application scenarios, helping to achieve better energy efficiency and system performance.
1. **Power Conversion**:
BUK9Y3R5-40E-VB excels in DC-DC converters and power switch modules. Its low RDS(ON) and high current carrying capability enable it to efficiently handle power conversion tasks, reducing power consumption and improving the overall efficiency of the system.
2. **Electric Vehicle Drive**:
In the motor drive system of electric vehicles, this MOSFET can be used for motor switching and battery management. Its high current capability and low on-resistance help electric vehicles achieve higher efficiency and longer driving range.
3. **Industrial Automation**:
In industrial automation equipment such as electric actuators and high-power power supplies, the characteristics of BUK9Y3R5-40E-VB make it an ideal choice. It can withstand large currents and maintain low power consumption, suitable for high-load applications.
4. **Communication Infrastructure**:
In communication equipment, especially base station power management and high-power RF amplifiers, this MOSFET can effectively handle high current loads and maintain stable performance. Its low RDS(ON) characteristics help reduce energy loss and improve system reliability.
With its efficient current handling capability and low on-resistance, BUK9Y3R5-40E-VB is suitable for a variety of high-current, high-efficiency electronic application scenarios, helping to achieve better energy efficiency and system performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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