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BUK9Y29-40E-VB Product details
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BUK9Y29-40E-VB MOSFET Product Introduction
The BUK9Y29-40E-VB is a high-performance N-channel MOSFET packaged in a compact SOT669 package. This MOSFET is designed for applications that require efficient power management and high current handling. Its maximum drain-source voltage (VDS) is 40V and supports a gate-source voltage (VGS) range of ±20V, suitable for a variety of circuit configurations. The device has a threshold voltage (Vth) of 1.4V, ensuring reliable switching operation. It has an extremely low on-resistance (RDS(ON)) of 2.4mΩ at VGS = 4.5V and 2mΩ at VGS = 10V, while supporting a continuous drain current (ID) of up to 100A. Its Trench technology further improves performance, reduces conduction losses, and ensures efficient switching operation.
The BUK9Y29-40E-VB is a high-performance N-channel MOSFET packaged in a compact SOT669 package. This MOSFET is designed for applications that require efficient power management and high current handling. Its maximum drain-source voltage (VDS) is 40V and supports a gate-source voltage (VGS) range of ±20V, suitable for a variety of circuit configurations. The device has a threshold voltage (Vth) of 1.4V, ensuring reliable switching operation. It has an extremely low on-resistance (RDS(ON)) of 2.4mΩ at VGS = 4.5V and 2mΩ at VGS = 10V, while supporting a continuous drain current (ID) of up to 100A. Its Trench technology further improves performance, reduces conduction losses, and ensures efficient switching operation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
1. **Package**: SOT669
- **Description**: Small, heat-efficient package for space-constrained applications and effective thermal management.
2. **Configuration**: Single N-channel
- **Description**: Single-channel configuration for easy integration into various electronic circuits.
3. **VDS (Drain-Source Voltage)**: 40V
- **Description**: The maximum voltage that a MOSFET can withstand between the drain and source in the off state.
4. **VGS (Gate-Source Voltage)**: ±20V
- **Description**: The maximum allowable voltage between the gate and source, used to control the operation of the MOSFET.
5. **Vth (Threshold Voltage)**: 1.4V
- **Description**: The gate voltage required to turn the MOSFET on, so that current starts to flow between the drain and source.
6. **RDS(ON) (On-Resistance)**:
- **2.4mΩ @ VGS = 4.5V**: The resistance between the drain and source when the gate voltage is 4.5V.
- **2mΩ @ VGS = 10V**: The resistance between the drain and source when the gate voltage is 10V.
- **Description**: Low on-resistance ensures minimal power loss and efficient operation.
7. **ID (Continuous Drain Current)**: 100A
- **Description**: The maximum current that the MOSFET can handle continuously under specified conditions.
8. **Technology**: Trench
- **Description**: Trench technology improves the overall performance of MOSFET by reducing conduction losses and improving switching characteristics.
1. **Package**: SOT669
- **Description**: Small, heat-efficient package for space-constrained applications and effective thermal management.
2. **Configuration**: Single N-channel
- **Description**: Single-channel configuration for easy integration into various electronic circuits.
3. **VDS (Drain-Source Voltage)**: 40V
- **Description**: The maximum voltage that a MOSFET can withstand between the drain and source in the off state.
4. **VGS (Gate-Source Voltage)**: ±20V
- **Description**: The maximum allowable voltage between the gate and source, used to control the operation of the MOSFET.
5. **Vth (Threshold Voltage)**: 1.4V
- **Description**: The gate voltage required to turn the MOSFET on, so that current starts to flow between the drain and source.
6. **RDS(ON) (On-Resistance)**:
- **2.4mΩ @ VGS = 4.5V**: The resistance between the drain and source when the gate voltage is 4.5V.
- **2mΩ @ VGS = 10V**: The resistance between the drain and source when the gate voltage is 10V.
- **Description**: Low on-resistance ensures minimal power loss and efficient operation.
7. **ID (Continuous Drain Current)**: 100A
- **Description**: The maximum current that the MOSFET can handle continuously under specified conditions.
8. **Technology**: Trench
- **Description**: Trench technology improves the overall performance of MOSFET by reducing conduction losses and improving switching characteristics.
Domain and module applications：
Application Examples
1. **Automotive Power Management**:
- The BUK9Y29-40E-VB is ideal for automotive power management systems such as electronic control units (ECUs) and power distribution modules. Its high current handling capability and low on-resistance help effectively manage power for vehicle electronics, improving system reliability and performance.
2. **Power Module**:
- In power modules, such as power supplies for industrial equipment and consumer electronics, the MOSFET's low on-resistance and high current capability make it ideal for switching applications and power conversion. It ensures efficient operation and reduced heat generation for power supplies and DC-DC converters.
3. **Motor Drive**:
- This MOSFET is suitable for motor drive applications, including electric vehicle (EV) motor controllers and industrial motor drives. Its ability to handle high currents and provide efficient switching helps to precisely control motor speed and improve performance in commercial and industrial environments.
4. **Battery Management Systems**:
- In battery management systems (BMS) for electric vehicles and energy storage systems, the BUK9Y29-40E-VB provides efficient power switching and low resistance, which is critical to effectively manage the battery charge and discharge cycles.
5. **Communication Equipment**:
- In communication equipment, such as base stations and RF amplifiers, the MOSFET’s high-speed switching and low power consumption are critical to maintaining signal integrity and optimizing power usage in communication infrastructure.
6. **Consumer Electronics**:
- This MOSFET can be used in a variety of consumer electronics, including laptops, tablets, and smartphones, where efficient power management and compact design are critical to extending battery life and improving device performance.
In summary, the BUK9Y29-40E-VB MOSFET is a versatile and efficient choice for automotive, power module, motor control, battery management, communication, and consumer electronics applications due to its low on-resistance, high current handling capability, and advanced trench technology.
1. **Automotive Power Management**:
- The BUK9Y29-40E-VB is ideal for automotive power management systems such as electronic control units (ECUs) and power distribution modules. Its high current handling capability and low on-resistance help effectively manage power for vehicle electronics, improving system reliability and performance.
2. **Power Module**:
- In power modules, such as power supplies for industrial equipment and consumer electronics, the MOSFET's low on-resistance and high current capability make it ideal for switching applications and power conversion. It ensures efficient operation and reduced heat generation for power supplies and DC-DC converters.
3. **Motor Drive**:
- This MOSFET is suitable for motor drive applications, including electric vehicle (EV) motor controllers and industrial motor drives. Its ability to handle high currents and provide efficient switching helps to precisely control motor speed and improve performance in commercial and industrial environments.
4. **Battery Management Systems**:
- In battery management systems (BMS) for electric vehicles and energy storage systems, the BUK9Y29-40E-VB provides efficient power switching and low resistance, which is critical to effectively manage the battery charge and discharge cycles.
5. **Communication Equipment**:
- In communication equipment, such as base stations and RF amplifiers, the MOSFET’s high-speed switching and low power consumption are critical to maintaining signal integrity and optimizing power usage in communication infrastructure.
6. **Consumer Electronics**:
- This MOSFET can be used in a variety of consumer electronics, including laptops, tablets, and smartphones, where efficient power management and compact design are critical to extending battery life and improving device performance.
In summary, the BUK9Y29-40E-VB MOSFET is a versatile and efficient choice for automotive, power module, motor control, battery management, communication, and consumer electronics applications due to its low on-resistance, high current handling capability, and advanced trench technology.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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