BUK9Y25-80E-VB Product details
Product introduction:
**BUK9Y25-80E-VB** is a single-channel N-channel MOSFET manufactured using advanced Trench technology with high efficiency, low on-resistance and excellent switching performance. The device is packaged in SOT669, with a maximum drain-source voltage (VDS) of 80V, a maximum gate-source voltage (VGS) of ±20V, and a gate threshold voltage (Vth) of 1.4V. When the gate-source voltage is 4.5V, its on-resistance (RDS(ON)) is 7.2mΩ, and when the gate-source voltage is 10V, the on-resistance is 6mΩ, and the maximum drain current (ID) is 90A. This MOSFET is widely used in power management, switching power supplies, motor control and other fields.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
- **Model**: BUK9Y25-80E-VB
- **Package**: SOT669
- **Configuration**: Single channel N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 7.2mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Maximum drain current (ID)**: 90A
- **Technology**: Trench
Domain and module applications:
**BUK9Y25-80E-VB** is suitable for a variety of applications and modules, here are some specific examples:
1. **Power Management**:
- In power management systems, this MOSFET can be used in DC-DC converters to help improve system efficiency and reliability.
- Its low on-resistance characteristics can reduce power loss and improve energy utilization.
2. **Switching Power Supply**:
- In switching power supplies, BUK9Y25-80E-VB can be used as the main switching element for efficient power conversion.
- Its high current capability and low on-resistance make it particularly suitable for high power output applications.
3. **Motor Control**:
- This MOSFET can be used in motor drive circuits to provide precise current control and fast switching response.
- Its high current carrying capacity makes it suitable for motor control systems that require high power drive.
4. **Automotive electronics**:
- In automotive electronic systems, the device can be used in power distribution modules, on-board chargers, and motor control applications.
- Its high reliability and low loss characteristics can meet the stringent requirements of automotive electronics for components.
5. **Industrial control**:
- BUK9Y25-80E-VB can be used in motor drive and power management modules in industrial automation systems.
- Its excellent conduction performance and high current carrying capacity can ensure stable operation of the system.
Through these application examples, we can see the important role of BUK9Y25-80E-VB MOSFET in multiple fields and modules, meeting the needs of efficient and reliable power conversion and control.
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