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BUK9Y22-30B-VB Product details
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BUK9Y22-30B-VB MOSFET Product Introduction
**Model**: BUK9Y22-30B-VB
**Package**: SOT669
**Configuration**: Single N-channel
**Maximum drain-source voltage (VDS)**: 30V
**Maximum gate-source voltage (VGS)**: ±20V
**Threshold voltage (Vth)**: 0.8V
**On-resistance (RDS(ON))**:
- 3.36mΩ@VGS=4.5V
- 2.8mΩ@VGS=10V
**Maximum drain current (ID)**: 90A
**Technology**: Trench
BUK9Y22-30B-VB It is a high-performance N-channel power MOSFET that uses advanced trench technology to provide low on-resistance and high current capability, making it ideal for a variety of high-efficiency power and switching applications.
**Model**: BUK9Y22-30B-VB
**Package**: SOT669
**Configuration**: Single N-channel
**Maximum drain-source voltage (VDS)**: 30V
**Maximum gate-source voltage (VGS)**: ±20V
**Threshold voltage (Vth)**: 0.8V
**On-resistance (RDS(ON))**:
- 3.36mΩ@VGS=4.5V
- 2.8mΩ@VGS=10V
**Maximum drain current (ID)**: 90A
**Technology**: Trench
BUK9Y22-30B-VB It is a high-performance N-channel power MOSFET that uses advanced trench technology to provide low on-resistance and high current capability, making it ideal for a variety of high-efficiency power and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 30V | 0.8V | 90A | 2.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 30V | 0.8V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 30V | 0.8V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
- **Package type**: SOT669
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 0.8V (typical)
- **On-resistance (RDS(ON))**:
- 3.36mΩ@VGS=4.5V
- 2.8mΩ@VGS=10V
- **Maximum drain current (ID)**: 90A
- **Depletion current (IDSS)**: <1μA @ VDS=30V, VGS=0V
- **Gate leakage current (IGSS)**: ±100nA @ VGS=±20V
- **Power dissipation (Ptot)**: 2.1W
- **Junction-to-ambient thermal resistance (RθJA)**: 62.5°C/W
- **Junction-to-case thermal resistance (RθJC)**: 1.6°C/W
- **Operating junction temperature range**: -55°C to +150°C
- **Storage temperature range**: -55°C to +150°C
- **Technology**: Trench
- **Package type**: SOT669
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 0.8V (typical)
- **On-resistance (RDS(ON))**:
- 3.36mΩ@VGS=4.5V
- 2.8mΩ@VGS=10V
- **Maximum drain current (ID)**: 90A
- **Depletion current (IDSS)**: <1μA @ VDS=30V, VGS=0V
- **Gate leakage current (IGSS)**: ±100nA @ VGS=±20V
- **Power dissipation (Ptot)**: 2.1W
- **Junction-to-ambient thermal resistance (RθJA)**: 62.5°C/W
- **Junction-to-case thermal resistance (RθJC)**: 1.6°C/W
- **Operating junction temperature range**: -55°C to +150°C
- **Storage temperature range**: -55°C to +150°C
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **Power Management**: The BUK9Y22-30B-VB MOSFET is ideal for power management applications, especially DC-DC converters, switching power supplies, and battery management systems. Its low on-resistance and high current handling capability enable it to provide efficient power transmission and conversion in these applications.
2. **Motor Drive**: In motor control and drive applications, this MOSFET provides strong current drive capability and is suitable for control circuits of various DC motors, stepper motors, and brushless DC motors.
3. **Automotive Electronics**: The BUK9Y22-30B-VB can also be used in automotive electronics applications such as in-vehicle power distribution, lighting control, and in-vehicle entertainment systems. Its high reliability and durability ensure stable operation in harsh environments.
4. **Consumer Electronics**: In consumer electronics products such as power management and charging circuits of smartphones, laptops, and tablets, this MOSFET provides efficient power control and management.
5. **Industrial Automation**: Industrial automation systems require efficient and reliable power devices. BUK9Y22-30B-VB is suitable for various industrial control systems and automation equipment, providing stable power management and driving capabilities.
BUK9Y22-30B-VB is a high-performance power MOSFET with a wide range of applications and multiple functional modules, making it an indispensable component in modern electronic systems.
1. **Power Management**: The BUK9Y22-30B-VB MOSFET is ideal for power management applications, especially DC-DC converters, switching power supplies, and battery management systems. Its low on-resistance and high current handling capability enable it to provide efficient power transmission and conversion in these applications.
2. **Motor Drive**: In motor control and drive applications, this MOSFET provides strong current drive capability and is suitable for control circuits of various DC motors, stepper motors, and brushless DC motors.
3. **Automotive Electronics**: The BUK9Y22-30B-VB can also be used in automotive electronics applications such as in-vehicle power distribution, lighting control, and in-vehicle entertainment systems. Its high reliability and durability ensure stable operation in harsh environments.
4. **Consumer Electronics**: In consumer electronics products such as power management and charging circuits of smartphones, laptops, and tablets, this MOSFET provides efficient power control and management.
5. **Industrial Automation**: Industrial automation systems require efficient and reliable power devices. BUK9Y22-30B-VB is suitable for various industrial control systems and automation equipment, providing stable power management and driving capabilities.
BUK9Y22-30B-VB is a high-performance power MOSFET with a wide range of applications and multiple functional modules, making it an indispensable component in modern electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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