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BUK9Y21-40E-VB Product details
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Product Introduction
**BUK9Y21-40E-VB** is a high-performance N-channel MOSFET in SOT669 package. This MOSFET is suitable for applications requiring high switching efficiency and low power consumption due to its low RDS(ON) and high ID capability. It uses Trench technology to maintain good performance at relatively high operating current and low on-resistance.
**BUK9Y21-40E-VB** is a high-performance N-channel MOSFET in SOT669 package. This MOSFET is suitable for applications requiring high switching efficiency and low power consumption due to its low RDS(ON) and high ID capability. It uses Trench technology to maintain good performance at relatively high operating current and low on-resistance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
- **Model**: BUK9Y21-40E-VB
- **Package**: SOT669
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 2.4mΩ (VGS=4.5V)
- 2mΩ (VGS=10V)
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench technology
- **Model**: BUK9Y21-40E-VB
- **Package**: SOT669
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 2.4mΩ (VGS=4.5V)
- 2mΩ (VGS=10V)
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench technology
Domain and module applications：
Applications and Module Examples
1. **Power Management**:
BUK9Y21-40E-VB is commonly used in power management systems, such as DC-DC converters and power switch modules, due to its low RDS(ON) and high current capability. In these applications, the low on-resistance of the MOSFET helps reduce power losses and improve conversion efficiency.
2. **Electric Vehicles**:
In the motor drive and battery management system of electric vehicles, this MOSFET can be used as a switching device. Its high current handling capability makes it suitable for high-power current paths, helping to improve the overall energy efficiency and endurance of the vehicle.
3. **Industrial Control**:
In industrial control systems, such as electric actuators and servo drives, the high switching speed and low on-resistance of the BUK9Y21-40E-VB make it an ideal choice. It is able to handle high current loads while maintaining low power operation.
4. **Communication equipment**:
In communication equipment such as base station power management, this MOSFET can effectively handle high current loads and ensure low power consumption. Its high reliability and stability make it perform well in frequent switching operations.
In these application fields and modules, BUK9Y21-40E-VB can provide reliable performance and efficient current control to meet the needs of modern electronic equipment for high-performance MOSFETs.
1. **Power Management**:
BUK9Y21-40E-VB is commonly used in power management systems, such as DC-DC converters and power switch modules, due to its low RDS(ON) and high current capability. In these applications, the low on-resistance of the MOSFET helps reduce power losses and improve conversion efficiency.
2. **Electric Vehicles**:
In the motor drive and battery management system of electric vehicles, this MOSFET can be used as a switching device. Its high current handling capability makes it suitable for high-power current paths, helping to improve the overall energy efficiency and endurance of the vehicle.
3. **Industrial Control**:
In industrial control systems, such as electric actuators and servo drives, the high switching speed and low on-resistance of the BUK9Y21-40E-VB make it an ideal choice. It is able to handle high current loads while maintaining low power operation.
4. **Communication equipment**:
In communication equipment such as base station power management, this MOSFET can effectively handle high current loads and ensure low power consumption. Its high reliability and stability make it perform well in frequent switching operations.
In these application fields and modules, BUK9Y21-40E-VB can provide reliable performance and efficient current control to meet the needs of modern electronic equipment for high-performance MOSFETs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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