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BUK9Y19-75B-VB Product details
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Product Introduction
**BUK9Y19-75B-VB** is a high-performance N-channel MOSFET in SOT669 package. This MOSFET is designed for high-efficiency switching applications with low on-resistance and high current carrying capacity. It is manufactured using Trench technology and can provide excellent switching performance and thermal stability.
**BUK9Y19-75B-VB** is a high-performance N-channel MOSFET in SOT669 package. This MOSFET is designed for high-efficiency switching applications with low on-resistance and high current carrying capacity. It is manufactured using Trench technology and can provide excellent switching performance and thermal stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
- **Package**: SOT669
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 80V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Gate-source voltage threshold (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 7.2mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 90A
- **Technology**: Trench
- **Package**: SOT669
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 80V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Gate-source voltage threshold (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 7.2mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 90A
- **Technology**: Trench
Domain and module applications：
Applications and Modules
**BUK9Y19-75B-VB** MOSFET has a wide range of applications in multiple fields and modules, especially in situations where high switching speed and low on-resistance are required. Here are some specific application examples:
1. **Power Management**: In high-efficiency power conversion modules, BUK9Y19-75B-VB can effectively reduce switching losses and improve overall system efficiency. Its low on-resistance significantly reduces heat generation and power consumption in power management applications with large switching currents.
2. **DC-DC Converters**: Due to its high current carrying capacity and low on-resistance, this MOSFET is suitable for switching elements in DC-DC converters, helping to improve conversion efficiency, especially in high power density applications.
3. **Electric Vehicles**: In the power systems of electric vehicles, such as battery management systems and motor drive circuits, the low RDS(ON) characteristics of BUK9Y19-75B-VB can help reduce energy losses and improve system reliability.
4. **Smart Home Devices**: In smart home devices that require high-frequency switching, this MOSFET can effectively support high-power switching and provide stable performance.
5. **Battery Charger**: In high-performance battery charger designs, the low on-resistance and high current carrying capacity of the BUK9Y19-75B-VB can improve charging efficiency, reduce charging time and heat generation.
These application examples show the diverse application scenarios of the BUK9Y19-75B-VB MOSFET in high-performance switching applications.
**BUK9Y19-75B-VB** MOSFET has a wide range of applications in multiple fields and modules, especially in situations where high switching speed and low on-resistance are required. Here are some specific application examples:
1. **Power Management**: In high-efficiency power conversion modules, BUK9Y19-75B-VB can effectively reduce switching losses and improve overall system efficiency. Its low on-resistance significantly reduces heat generation and power consumption in power management applications with large switching currents.
2. **DC-DC Converters**: Due to its high current carrying capacity and low on-resistance, this MOSFET is suitable for switching elements in DC-DC converters, helping to improve conversion efficiency, especially in high power density applications.
3. **Electric Vehicles**: In the power systems of electric vehicles, such as battery management systems and motor drive circuits, the low RDS(ON) characteristics of BUK9Y19-75B-VB can help reduce energy losses and improve system reliability.
4. **Smart Home Devices**: In smart home devices that require high-frequency switching, this MOSFET can effectively support high-power switching and provide stable performance.
5. **Battery Charger**: In high-performance battery charger designs, the low on-resistance and high current carrying capacity of the BUK9Y19-75B-VB can improve charging efficiency, reduce charging time and heat generation.
These application examples show the diverse application scenarios of the BUK9Y19-75B-VB MOSFET in high-performance switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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