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BUK9Y15-100E-VB Product details
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Product Introduction
**BUK9Y15-100E-VB** is a high-performance N-Channel MOSFET in SOT669 package, designed for high voltage and medium current applications. This MOSFET adopts advanced Trench technology, which can provide excellent conduction performance and low power consumption characteristics at high current and high switching frequency. Its maximum drain-source voltage (VDS) is 100V and the maximum drain current (ID) reaches 69A. The low on-resistance and wide gate threshold voltage range of BUK9Y15-100E-VB make it very suitable for various electronic circuits, providing high efficiency and stability.
**BUK9Y15-100E-VB** is a high-performance N-Channel MOSFET in SOT669 package, designed for high voltage and medium current applications. This MOSFET adopts advanced Trench technology, which can provide excellent conduction performance and low power consumption characteristics at high current and high switching frequency. Its maximum drain-source voltage (VDS) is 100V and the maximum drain current (ID) reaches 69A. The low on-resistance and wide gate threshold voltage range of BUK9Y15-100E-VB make it very suitable for various electronic circuits, providing high efficiency and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | 11.6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
- **Model**: BUK9Y15-100E-VB
- **Package**: SOT669
- **Configuration**: Unipolar N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 13.92mΩ (VGS = 4.5V)
- 11.6mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 69A
- **Technology**: Trench
- **Model**: BUK9Y15-100E-VB
- **Package**: SOT669
- **Configuration**: Unipolar N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 13.92mΩ (VGS = 4.5V)
- 11.6mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 69A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **Electric Tools and Vehicles**:
- BUK9Y15-100E-VB excels in power tools and electric vehicles, and is suitable for battery management systems and motor drive circuits. Its high current carrying capacity and low on-resistance ensure high performance and long battery life, and can cope with high power demands and frequent switching operations.
2. **Power Management Systems**:
- This MOSFET is very suitable in power management systems, especially for power adapters, voltage regulators and DC-DC converters. Its high performance and low power consumption characteristics help improve the overall efficiency of the system, reduce heat generation, and ensure stable operation of the system under high load.
3. **Communication Equipment**:
- In communication equipment, BUK9Y15-100E-VB is used in high-frequency application scenarios such as power modules and RF amplifiers. Its low on-resistance and high switching speed help reduce signal loss and interference, and improve the performance and reliability of communication equipment.
4. **Industrial Control**:
- BUK9Y15-100E-VB is used for control circuits and drive circuits in industrial control systems, such as programmable logic controllers (PLCs) and robot control systems. Its high current and low on-resistance characteristics ensure precise control and efficient energy transmission, improving the efficiency and life of industrial equipment.
These application scenarios demonstrate the superior performance of BUK9Y15-100E-VB in medium voltage and high current applications, and its wide applicability makes it an indispensable key component in various electronic devices and systems.
1. **Electric Tools and Vehicles**:
- BUK9Y15-100E-VB excels in power tools and electric vehicles, and is suitable for battery management systems and motor drive circuits. Its high current carrying capacity and low on-resistance ensure high performance and long battery life, and can cope with high power demands and frequent switching operations.
2. **Power Management Systems**:
- This MOSFET is very suitable in power management systems, especially for power adapters, voltage regulators and DC-DC converters. Its high performance and low power consumption characteristics help improve the overall efficiency of the system, reduce heat generation, and ensure stable operation of the system under high load.
3. **Communication Equipment**:
- In communication equipment, BUK9Y15-100E-VB is used in high-frequency application scenarios such as power modules and RF amplifiers. Its low on-resistance and high switching speed help reduce signal loss and interference, and improve the performance and reliability of communication equipment.
4. **Industrial Control**:
- BUK9Y15-100E-VB is used for control circuits and drive circuits in industrial control systems, such as programmable logic controllers (PLCs) and robot control systems. Its high current and low on-resistance characteristics ensure precise control and efficient energy transmission, improving the efficiency and life of industrial equipment.
These application scenarios demonstrate the superior performance of BUK9Y15-100E-VB in medium voltage and high current applications, and its wide applicability makes it an indispensable key component in various electronic devices and systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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