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BUK9Y12-100E-VB Product details
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Product Introduction
**BUK9Y12-100E-VB** is a high-performance N-Channel MOSFET in SOT669 package, designed for high voltage and medium to high current applications. Utilizing advanced Trench technology, this MOSFET can operate stably at a drain-source voltage of 100V and provide a drain current of up to 69A. Its low on-resistance and low threshold voltage ensure efficient switching performance, which is very suitable for applications requiring high efficiency and high reliability.
**BUK9Y12-100E-VB** is a high-performance N-Channel MOSFET in SOT669 package, designed for high voltage and medium to high current applications. Utilizing advanced Trench technology, this MOSFET can operate stably at a drain-source voltage of 100V and provide a drain current of up to 69A. Its low on-resistance and low threshold voltage ensure efficient switching performance, which is very suitable for applications requiring high efficiency and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | 11.6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
- **Package type**: SOT669
- **Configuration**: Unipolar N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 13.92mΩ @ VGS = 4.5V
- 11.6mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 69A
- **Technology**: Trench
- **Package type**: SOT669
- **Configuration**: Unipolar N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 13.92mΩ @ VGS = 4.5V
- 11.6mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 69A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **Power Management**: BUK9Y12-100E-VB excels in power management systems for DC-DC converters and switching power supplies. Its low on-resistance and high voltage capability enable it to efficiently convert and regulate voltage in power modules, especially in devices with high power demands, such as server power supplies and high-performance computing devices.
2. **Automotive Electronics**: Due to its high voltage and current handling capabilities, this MOSFET is suitable for a variety of applications in automotive electronics, such as electric vehicle power systems and battery management systems. Its reliable switching performance and high voltage resistance ensure efficient operation and safety of automotive electronic systems.
3. **Industrial Control**: In industrial control systems, BUK9Y12-100E-VB can be used for motor control, power conditioning, and factory automation equipment. Its high current and voltage handling capabilities ensure reliable performance in harsh industrial environments, meeting the requirements of industrial control systems for high performance and durability.
4. **Solar Inverter**: This MOSFET is also very suitable for use in renewable energy applications such as solar inverters. Its efficient switching performance and low on-resistance enable it to effectively handle high currents and high voltages during the inverter process, improving the overall efficiency and reliability of solar power generation systems.
In summary, BUK9Y12-100E-VB is particularly suitable for use in power management, automotive electronics, industrial control, and solar inverters with its excellent performance and wide application adaptability, providing efficient and reliable solutions for various electronic devices and systems.
1. **Power Management**: BUK9Y12-100E-VB excels in power management systems for DC-DC converters and switching power supplies. Its low on-resistance and high voltage capability enable it to efficiently convert and regulate voltage in power modules, especially in devices with high power demands, such as server power supplies and high-performance computing devices.
2. **Automotive Electronics**: Due to its high voltage and current handling capabilities, this MOSFET is suitable for a variety of applications in automotive electronics, such as electric vehicle power systems and battery management systems. Its reliable switching performance and high voltage resistance ensure efficient operation and safety of automotive electronic systems.
3. **Industrial Control**: In industrial control systems, BUK9Y12-100E-VB can be used for motor control, power conditioning, and factory automation equipment. Its high current and voltage handling capabilities ensure reliable performance in harsh industrial environments, meeting the requirements of industrial control systems for high performance and durability.
4. **Solar Inverter**: This MOSFET is also very suitable for use in renewable energy applications such as solar inverters. Its efficient switching performance and low on-resistance enable it to effectively handle high currents and high voltages during the inverter process, improving the overall efficiency and reliability of solar power generation systems.
In summary, BUK9Y12-100E-VB is particularly suitable for use in power management, automotive electronics, industrial control, and solar inverters with its excellent performance and wide application adaptability, providing efficient and reliable solutions for various electronic devices and systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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