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BUK9Y11-80E-VB Product details
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Product Introduction
**BUK9Y11-80E-VB** is a high-performance N-channel MOSFET in a SOT669 package, suitable for applications requiring high current carrying capability and low on-resistance. It has a rated drain-source voltage (VDS) of 80V and can operate at a gate drive voltage of ±20V. With its low on-resistance (RDS(ON)) and Trench technology, this MOSFET excels in low switching losses and high current handling, making it ideal for high-efficiency power management and switching applications.
**BUK9Y11-80E-VB** is a high-performance N-channel MOSFET in a SOT669 package, suitable for applications requiring high current carrying capability and low on-resistance. It has a rated drain-source voltage (VDS) of 80V and can operate at a gate drive voltage of ±20V. With its low on-resistance (RDS(ON)) and Trench technology, this MOSFET excels in low switching losses and high current handling, making it ideal for high-efficiency power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
- **Model**: BUK9Y11-80E-VB
- **Package**: SOT669
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 7.2mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Drain current (ID)**: 90A
- **Technology**: Trench
- **Model**: BUK9Y11-80E-VB
- **Package**: SOT669
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 7.2mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Drain current (ID)**: 90A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **Power management module**:
- **Scenario**: In high-efficiency switching power supply (SMPS)
- **Description**: In the switching power supply, BUK9Y11-80E-VB can be used as a switching element. Its low on-resistance can significantly reduce switching losses and improve the overall efficiency of the system.
2. **DC-DC converter**:
- **Scenario**: High-power DC-DC converter
- **Description**: Its high current carrying capacity makes it suitable for high-side and low-side switches of DC-DC converters, capable of supporting high-current loads while maintaining low on-resistance to reduce power losses.
3. **Electric vehicle**:
- **Scenario**: Battery management system for electric vehicles
- **Description**: In the battery management system for electric vehicles, BUK9Y11-80E-VB can be used for battery switch control to ensure efficient power conversion and management.
4. **Power Switch**:
- **Scenario**: High-power switch application
- **Description**: Due to its excellent switching characteristics and high current handling capability, this MOSFET is suitable for a variety of applications requiring high-power switching, such as industrial equipment and power distribution systems.
1. **Power management module**:
- **Scenario**: In high-efficiency switching power supply (SMPS)
- **Description**: In the switching power supply, BUK9Y11-80E-VB can be used as a switching element. Its low on-resistance can significantly reduce switching losses and improve the overall efficiency of the system.
2. **DC-DC converter**:
- **Scenario**: High-power DC-DC converter
- **Description**: Its high current carrying capacity makes it suitable for high-side and low-side switches of DC-DC converters, capable of supporting high-current loads while maintaining low on-resistance to reduce power losses.
3. **Electric vehicle**:
- **Scenario**: Battery management system for electric vehicles
- **Description**: In the battery management system for electric vehicles, BUK9Y11-80E-VB can be used for battery switch control to ensure efficient power conversion and management.
4. **Power Switch**:
- **Scenario**: High-power switch application
- **Description**: Due to its excellent switching characteristics and high current handling capability, this MOSFET is suitable for a variety of applications requiring high-power switching, such as industrial equipment and power distribution systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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