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BUK9Y113-100E-VB Product details
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Product Introduction
**BUK9Y113-100E-VB** is a high-performance N-channel MOSFET in SOT669 package. This MOSFET is designed for high voltage and high efficiency applications, with low on-resistance and excellent current handling capability. BUK9Y113-100E-VB uses advanced Trench technology to provide excellent conduction performance at a lower gate-source voltage, making it very suitable for high voltage switching, power management and power conversion.
**BUK9Y113-100E-VB** is a high-performance N-channel MOSFET in SOT669 package. This MOSFET is designed for high voltage and high efficiency applications, with low on-resistance and excellent current handling capability. BUK9Y113-100E-VB uses advanced Trench technology to provide excellent conduction performance at a lower gate-source voltage, making it very suitable for high voltage switching, power management and power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | 11.6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
- **Model**: BUK9Y113-100E-VB
- **Package**: SOT669
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (V_DS)**: 100V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.4V
- **On-resistance (R_DS(ON)）**:
- 13.92mΩ @ V_GS = 4.5V
- 11.6mΩ @ V_GS = 10V
- **Maximum leakage current (I_D)**: 69A
- **Technology**: Trench technology
- **Model**: BUK9Y113-100E-VB
- **Package**: SOT669
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (V_DS)**: 100V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.4V
- **On-resistance (R_DS(ON)）**:
- 13.92mΩ @ V_GS = 4.5V
- 11.6mΩ @ V_GS = 10V
- **Maximum leakage current (I_D)**: 69A
- **Technology**: Trench technology
Domain and module applications：
Applications and Modules
1. **High Voltage Switching**:
- The high drain-source withstand voltage (100V) and low on-resistance (11.6mΩ @ V_GS = 10V) of BUK9Y113-100E-VB make it ideal for high voltage switching applications. It can efficiently control the flow of current and is suitable for switching circuits that require high voltage tolerance, such as power switches and high voltage protection circuits.
2. **Power Management Systems**:
- In power management systems, the high current capability (69A) and low on-resistance of BUK9Y113-100E-VB can significantly improve the power conversion efficiency of the system. It is suitable for DC-DC converters, power distribution and voltage regulation modules, which can effectively reduce power loss and improve overall system performance.
3. **Power Conversion Modules**:
- BUK9Y113-100E-VB excels in power conversion modules, especially in scenarios requiring high current and high voltage. It is able to provide stable power conversion and is suitable for various DC-DC converters and AC-DC power modules, ensuring stable output and efficient power conversion.
4. **Battery Management Systems**:
- In battery management systems, the high current handling capability and low power consumption of this MOSFET make it suitable for battery protection circuits, charge and discharge control, and battery balancing. This helps improve the safety and operating efficiency of the battery system, ensuring long battery life and stable performance.
5. **Power Amplifiers**:
- BUK9Y113-100E-VB's low on-resistance and high current handling capability make it suitable for power amplifier applications, such as power amplifier modules in broadcast and communication equipment. It can provide efficient power amplification under high voltage conditions to meet the requirements of high-power applications.
Through these application examples, it can be seen that BUK9Y113-100E-VB can play an important role in multiple high-performance electronic devices and systems with its excellent electrical performance and high reliability.
1. **High Voltage Switching**:
- The high drain-source withstand voltage (100V) and low on-resistance (11.6mΩ @ V_GS = 10V) of BUK9Y113-100E-VB make it ideal for high voltage switching applications. It can efficiently control the flow of current and is suitable for switching circuits that require high voltage tolerance, such as power switches and high voltage protection circuits.
2. **Power Management Systems**:
- In power management systems, the high current capability (69A) and low on-resistance of BUK9Y113-100E-VB can significantly improve the power conversion efficiency of the system. It is suitable for DC-DC converters, power distribution and voltage regulation modules, which can effectively reduce power loss and improve overall system performance.
3. **Power Conversion Modules**:
- BUK9Y113-100E-VB excels in power conversion modules, especially in scenarios requiring high current and high voltage. It is able to provide stable power conversion and is suitable for various DC-DC converters and AC-DC power modules, ensuring stable output and efficient power conversion.
4. **Battery Management Systems**:
- In battery management systems, the high current handling capability and low power consumption of this MOSFET make it suitable for battery protection circuits, charge and discharge control, and battery balancing. This helps improve the safety and operating efficiency of the battery system, ensuring long battery life and stable performance.
5. **Power Amplifiers**:
- BUK9Y113-100E-VB's low on-resistance and high current handling capability make it suitable for power amplifier applications, such as power amplifier modules in broadcast and communication equipment. It can provide efficient power amplification under high voltage conditions to meet the requirements of high-power applications.
Through these application examples, it can be seen that BUK9Y113-100E-VB can play an important role in multiple high-performance electronic devices and systems with its excellent electrical performance and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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