BUK9Y11-30B-VB Product details
Product introduction:
**BUK9Y11-30B-VB** is a high-performance N-channel MOSFET in SOT669 package, designed for low voltage and high current applications. This MOSFET uses advanced Trench technology, with a maximum drain-to-source voltage of 30V and a rated drain current of 90A. Its on-resistance is 2.8mΩ (@ VGS=10V) and 3.36mΩ (@ VGS=4.5V), which can effectively reduce power consumption and heat generation in high-power applications. Its threshold voltage is only 0.8V, which supports low gate voltage operation and is suitable for use in high-performance electronic systems.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 30V | 0.8V | 90A | 2.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 30V | 0.8V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 30V | 0.8V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
- **Model**: BUK9Y11-30B-VB
- **Package**: SOT669
- **Configuration**: Single N channel
- **Maximum drain to source voltage (VDS)**: 30V
- **Maximum gate to source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.8V
- **On-resistance (RDS(ON))**:
- 2.8mΩ @ VGS=10V
- 3.36mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 90A
- **Technology**: Trench
Domain and module applications:
1. **Portable Electronic Devices**:
- In portable electronic devices such as smartphones and laptops, the BUK9Y11-30B-VB can provide low on-resistance and high current handling capability as a switching element. Its low threshold voltage makes it suitable for battery-powered applications, which can effectively improve power efficiency and extend battery life.
2. **High-Efficiency Power Management**:
- In high-efficiency power management systems such as DC-DC converters and power regulators, the BUK9Y11-30B-VB can be used as a high-efficiency switching element. Its low RDS(ON) and high current capability ensure efficient energy conversion and low energy losses, and is suitable for application scenarios that require high current and low power consumption.
3. **Automotive Electronics**:
- In automotive electronic systems, this MOSFET can be used in vehicle power management systems. Its low on-resistance and high current capability support high-efficiency operation of automotive electronic devices, and is suitable for battery management, power transmission and electric control modules.
4. **LED Driver Circuit**:
- In LED driver circuits, BUK9Y11-30B-VB can be used as a switching element to help control the brightness and on/off state of LED lighting. Its low RDS(ON) can reduce power consumption and improve driving efficiency, making it suitable for high-efficiency LED lighting systems.
5. **Power Tools**:
- In power tools and other high-power consumer electronics, this MOSFET can be used as a switching element to handle high current loads. Its high current handling capability and low on-resistance make it suitable for use in power switches and control modules of power tools to ensure stable and efficient operation.
6. **Power Protection**:
- In power protection circuits, BUK9Y11-30B-VB can be used as a protection switch to prevent overcurrent and overvoltage conditions. Its high current capability and low on-resistance can effectively protect circuits and equipment from damage.
The above is the detailed product information and application examples of BUK9Y11-30B-VB.
Technical support:
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