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BUK9Y107-80E-VB Product details
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Product Introduction
**BUK9Y107-80E-VB** is a high-performance N-Channel MOSFET in SOT669 package, designed for high voltage and high current applications. This MOSFET adopts advanced Trench technology, which can provide excellent conduction performance and low power consumption characteristics at high current and high switching frequency. Its maximum drain-source voltage (VDS) is 80V and the maximum drain current (ID) reaches 90A. The low on-resistance and wide gate threshold voltage range of BUK9Y107-80E-VB make it very suitable for various electronic circuits, providing high efficiency and stability.
**BUK9Y107-80E-VB** is a high-performance N-Channel MOSFET in SOT669 package, designed for high voltage and high current applications. This MOSFET adopts advanced Trench technology, which can provide excellent conduction performance and low power consumption characteristics at high current and high switching frequency. Its maximum drain-source voltage (VDS) is 80V and the maximum drain current (ID) reaches 90A. The low on-resistance and wide gate threshold voltage range of BUK9Y107-80E-VB make it very suitable for various electronic circuits, providing high efficiency and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
- **Model**: BUK9Y107-80E-VB
- **Package**: SOT669
- **Configuration**: Unipolar N-Channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 7.2mΩ (VGS = 4.5V)
- 6mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 90A
- **Technology**: Trench
- **Model**: BUK9Y107-80E-VB
- **Package**: SOT669
- **Configuration**: Unipolar N-Channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 7.2mΩ (VGS = 4.5V)
- 6mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 90A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **High-Efficiency Power Management**:
- BUK9Y107-80E-VB excels in power management applications, especially for power adapters, DC-DC converters, and power distribution networks. Its low on-resistance and high current handling capability reduce power losses, improve system efficiency, and maintain stable performance under high load conditions.
2. **Electric Vehicles and Motor Drives**:
- The high current capability and low on-resistance of BUK9Y107-80E-VB make it an ideal switching element in electric vehicles and industrial motor drive systems. It can handle high current loads, provide efficient motor control, and ensure system stability and reliability under various operating conditions.
3. **Inverters and Converters**:
- In inverter applications, such as solar inverters and wind power inverters, the high voltage and high current carrying capabilities of the BUK9Y107-80E-VB enable it to effectively handle current fluctuations, ensure the stability and high efficiency of the inverter, and improve the overall efficiency of energy conversion.
4. **High-Power Switching and Protection Circuits**:
- This MOSFET also performs well in high-power switching and protection circuits. Its high current handling capability and low on-resistance enable it to effectively handle high-power loads and provide reliable over-current protection to ensure safe and stable operation of the circuit.
These application examples demonstrate the superior performance of the BUK9Y107-80E-VB under high voltage and high current conditions, making it widely applicable in a variety of electronic devices and systems that require high performance and high reliability.
1. **High-Efficiency Power Management**:
- BUK9Y107-80E-VB excels in power management applications, especially for power adapters, DC-DC converters, and power distribution networks. Its low on-resistance and high current handling capability reduce power losses, improve system efficiency, and maintain stable performance under high load conditions.
2. **Electric Vehicles and Motor Drives**:
- The high current capability and low on-resistance of BUK9Y107-80E-VB make it an ideal switching element in electric vehicles and industrial motor drive systems. It can handle high current loads, provide efficient motor control, and ensure system stability and reliability under various operating conditions.
3. **Inverters and Converters**:
- In inverter applications, such as solar inverters and wind power inverters, the high voltage and high current carrying capabilities of the BUK9Y107-80E-VB enable it to effectively handle current fluctuations, ensure the stability and high efficiency of the inverter, and improve the overall efficiency of energy conversion.
4. **High-Power Switching and Protection Circuits**:
- This MOSFET also performs well in high-power switching and protection circuits. Its high current handling capability and low on-resistance enable it to effectively handle high-power loads and provide reliable over-current protection to ensure safe and stable operation of the circuit.
These application examples demonstrate the superior performance of the BUK9Y107-80E-VB under high voltage and high current conditions, making it widely applicable in a variety of electronic devices and systems that require high performance and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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