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BUK9Y104-100B-VB Product details
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Product Introduction
**BUK9Y104-100B-VB** is a high-performance N-channel MOSFET in SOT669 package and based on Trench technology. This MOSFET is designed for high voltage and high current applications, with excellent low on-resistance and high drain current capability. Its high voltage tolerance and excellent conductivity make it perform well in scenarios with high power and high efficiency requirements.
**BUK9Y104-100B-VB** is a high-performance N-channel MOSFET in SOT669 package and based on Trench technology. This MOSFET is designed for high voltage and high current applications, with excellent low on-resistance and high drain current capability. Its high voltage tolerance and excellent conductivity make it perform well in scenarios with high power and high efficiency requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | 11.6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
- **Package**: SOT669
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 13.92mΩ @ VGS = 4.5V
- 11.6mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 69A
- **Technology**: Trench
- **Package**: SOT669
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 13.92mΩ @ VGS = 4.5V
- 11.6mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 69A
- **Technology**: Trench
Domain and module applications：
Application Examples
The characteristics of the **BUK9Y104-100B-VB** MOSFET make it excel in several high power and high current applications:
1. **High Voltage Power Management**:
Due to its 100V drain-source voltage and low on-resistance, the BUK9Y104-100B-VB is ideal for high voltage power management applications. It is suitable for high voltage DC-DC converters and power regulators, providing efficient power conversion and low power losses.
2. **High Power Switching**:
This MOSFET is suitable for switching applications that need to handle high current and high voltage. Its high current capability (69A) and low on-resistance make it excel in high power switching applications, such as providing stable performance in motor drives and high power load switching.
3. **Industrial Power and Control**:
In industrial power and control systems, the BUK9Y104-100B-VB is capable of handling high power currents and is suitable for power conversion, load switching, and motor control systems. Its reliability and low switching losses ensure efficient operation and long life of industrial equipment.
4. **Automotive Electronics**:
Due to its high voltage resistance and high current handling capabilities, this MOSFET is also suitable for automotive electronic systems such as power windows, power seats, and power door locks. Its high efficiency and stable performance ensure reliable operation in automotive environments.
These application examples demonstrate the key role of the BUK9Y104-100B-VB in high voltage and high current applications, especially in scenarios that require high efficiency and high reliability.
The characteristics of the **BUK9Y104-100B-VB** MOSFET make it excel in several high power and high current applications:
1. **High Voltage Power Management**:
Due to its 100V drain-source voltage and low on-resistance, the BUK9Y104-100B-VB is ideal for high voltage power management applications. It is suitable for high voltage DC-DC converters and power regulators, providing efficient power conversion and low power losses.
2. **High Power Switching**:
This MOSFET is suitable for switching applications that need to handle high current and high voltage. Its high current capability (69A) and low on-resistance make it excel in high power switching applications, such as providing stable performance in motor drives and high power load switching.
3. **Industrial Power and Control**:
In industrial power and control systems, the BUK9Y104-100B-VB is capable of handling high power currents and is suitable for power conversion, load switching, and motor control systems. Its reliability and low switching losses ensure efficient operation and long life of industrial equipment.
4. **Automotive Electronics**:
Due to its high voltage resistance and high current handling capabilities, this MOSFET is also suitable for automotive electronic systems such as power windows, power seats, and power door locks. Its high efficiency and stable performance ensure reliable operation in automotive environments.
These application examples demonstrate the key role of the BUK9Y104-100B-VB in high voltage and high current applications, especially in scenarios that require high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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