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BUK9Y09-40B-VB Product details
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BUK9Y09-40B-VB MOSFET Product Introduction
**BUK9Y09-40B-VB** is a high performance single N-channel MOSFET in a SOT669 package designed for high current and high efficiency applications. It utilizes Trench technology to provide ultra-low on-resistance and high current handling capability, making it excel in a variety of high power applications. This MOSFET is designed to provide excellent switching performance and current carrying capability, making it suitable for use in electronic systems that require high efficiency and low power consumption.
**BUK9Y09-40B-VB** is a high performance single N-channel MOSFET in a SOT669 package designed for high current and high efficiency applications. It utilizes Trench technology to provide ultra-low on-resistance and high current handling capability, making it excel in a variety of high power applications. This MOSFET is designed to provide excellent switching performance and current carrying capability, making it suitable for use in electronic systems that require high efficiency and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
- **Package**: SOT669
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 2.4mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
- **Package**: SOT669
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 2.4mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **High Power Switches**:
BUK9Y09-40B-VB MOSFET is ideal for high power switching applications due to its ultra-low on-resistance and high current carrying capability. It can handle high current loads while maintaining low power consumption, making it suitable for high power switching scenarios such as power switches and load switches.
2. **Power Management**:
In power management systems, the high current handling capability and low RDS(ON) characteristics of this MOSFET make it an ideal switching component. It can be used in power switches, battery management, and power distribution modules to optimize the system's power efficiency, reduce power losses, and improve system stability.
3. **DC-DC Converters**:
In DC-DC converters, BUK9Y09-40B-VB MOSFET can provide efficient voltage conversion and current management. Its low on-resistance and high current capability help improve conversion efficiency and are suitable for applications in high-performance power modules and battery-powered systems, ensuring stable voltage output and efficient power management.
4. **Motor Drives**:
Due to its excellent current carrying capacity and low on-resistance, the BUK9Y09-40B-VB is suitable for motor drive applications. It can effectively control the start-up and operation of the motor, handle high current loads, and improve the efficiency and reliability of the motor drive system.
5. **Power Amplifiers**:
In power amplifier circuits, this MOSFET is able to handle high-power signals while maintaining low power consumption characteristics. It is suitable for high-power amplification applications such as broadcasting and communications, ensuring efficient operation and stability of the system.
These application examples demonstrate the powerful advantages of the BUK9Y09-40B-VB MOSFET in high-current and high-efficiency applications, making it play a key role in various electronic systems.
1. **High Power Switches**:
BUK9Y09-40B-VB MOSFET is ideal for high power switching applications due to its ultra-low on-resistance and high current carrying capability. It can handle high current loads while maintaining low power consumption, making it suitable for high power switching scenarios such as power switches and load switches.
2. **Power Management**:
In power management systems, the high current handling capability and low RDS(ON) characteristics of this MOSFET make it an ideal switching component. It can be used in power switches, battery management, and power distribution modules to optimize the system's power efficiency, reduce power losses, and improve system stability.
3. **DC-DC Converters**:
In DC-DC converters, BUK9Y09-40B-VB MOSFET can provide efficient voltage conversion and current management. Its low on-resistance and high current capability help improve conversion efficiency and are suitable for applications in high-performance power modules and battery-powered systems, ensuring stable voltage output and efficient power management.
4. **Motor Drives**:
Due to its excellent current carrying capacity and low on-resistance, the BUK9Y09-40B-VB is suitable for motor drive applications. It can effectively control the start-up and operation of the motor, handle high current loads, and improve the efficiency and reliability of the motor drive system.
5. **Power Amplifiers**:
In power amplifier circuits, this MOSFET is able to handle high-power signals while maintaining low power consumption characteristics. It is suitable for high-power amplification applications such as broadcasting and communications, ensuring efficient operation and stability of the system.
These application examples demonstrate the powerful advantages of the BUK9Y09-40B-VB MOSFET in high-current and high-efficiency applications, making it play a key role in various electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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