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BUK9E08-55B-VB Product details
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Product Introduction
**BUK9E08-55B-VB** is a high-performance N-Channel MOSFET in TO262 package, designed for medium-to-high voltage and high current applications. Utilizing advanced Trench technology, this MOSFET can operate stably at drain-source voltages up to 60V and provide drain currents up to 120A. Its low on-resistance ensures efficient switching performance and is suitable for use in applications requiring high current and low power consumption.
**BUK9E08-55B-VB** is a high-performance N-Channel MOSFET in TO262 package, designed for medium-to-high voltage and high current applications. Utilizing advanced Trench technology, this MOSFET can operate stably at drain-source voltages up to 60V and provide drain currents up to 120A. Its low on-resistance ensures efficient switching performance and is suitable for use in applications requiring high current and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2.5V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2.5V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2.5V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Package type**: TO262
- **Configuration**: Unipolar N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench
- **Package type**: TO262
- **Configuration**: Unipolar N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **Power Management**: In power management systems, the BUK9E08-55B-VB is suitable for efficient DC-DC converters and switching power supplies. Its low on-resistance and high current handling capability enable effective switching control in high-power power modules, improve system efficiency and reduce energy loss, and is particularly suitable for power conversion applications in high-power computing and communication equipment.
2. **Motor Drive**: This MOSFET is ideal for motor drive applications. With its ability to withstand currents up to 120A and very low on-resistance, it is able to efficiently drive high-power motors such as electric vehicles and industrial motor drive systems. Its excellent switching performance and high current capability ensure smooth and efficient operation of motor drive systems.
3. **Power Regulator**: In power regulators, the BUK9E08-55B-VB can be used as a high-power switch and power regulation circuit. Its excellent switching performance and low on-resistance enable it to provide reliable performance in various power regulation applications, including power regulation and management in power electronic equipment and industrial automation equipment.
4. **Power protection**: This MOSFET is also suitable for power protection circuits, such as overcurrent protection and overvoltage protection. Its high current handling capability and low on-resistance enable it to provide effective protection in abnormal power supply conditions to prevent system damage. It is suitable for use in various protection circuits to ensure the safety of the power system and the long life of the equipment.
In summary, BUK9E08-55B-VB is particularly suitable for use in power management, motor drive, power regulation and power protection with its excellent performance and wide adaptability, providing reliable solutions and efficient performance.
1. **Power Management**: In power management systems, the BUK9E08-55B-VB is suitable for efficient DC-DC converters and switching power supplies. Its low on-resistance and high current handling capability enable effective switching control in high-power power modules, improve system efficiency and reduce energy loss, and is particularly suitable for power conversion applications in high-power computing and communication equipment.
2. **Motor Drive**: This MOSFET is ideal for motor drive applications. With its ability to withstand currents up to 120A and very low on-resistance, it is able to efficiently drive high-power motors such as electric vehicles and industrial motor drive systems. Its excellent switching performance and high current capability ensure smooth and efficient operation of motor drive systems.
3. **Power Regulator**: In power regulators, the BUK9E08-55B-VB can be used as a high-power switch and power regulation circuit. Its excellent switching performance and low on-resistance enable it to provide reliable performance in various power regulation applications, including power regulation and management in power electronic equipment and industrial automation equipment.
4. **Power protection**: This MOSFET is also suitable for power protection circuits, such as overcurrent protection and overvoltage protection. Its high current handling capability and low on-resistance enable it to provide effective protection in abnormal power supply conditions to prevent system damage. It is suitable for use in various protection circuits to ensure the safety of the power system and the long life of the equipment.
In summary, BUK9E08-55B-VB is particularly suitable for use in power management, motor drive, power regulation and power protection with its excellent performance and wide adaptability, providing reliable solutions and efficient performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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