中文
English
BUK9E06-55B-VB Product details
Back to previous pageProduct introduction：
Product Introduction
**BUK9E06-55B-VB** is a high-performance N-channel MOSFET in TO262 package. It uses advanced Trench technology and is designed for high current and high efficiency power management applications. This MOSFET performs well under high voltage and high current conditions, and its low on-resistance enables it to provide excellent performance and reliability in a variety of high power demand applications.
**BUK9E06-55B-VB** is a high-performance N-channel MOSFET in TO262 package. It uses advanced Trench technology and is designed for high current and high efficiency power management applications. This MOSFET performs well under high voltage and high current conditions, and its low on-resistance enables it to provide excellent performance and reliability in a variety of high power demand applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2.5V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2.5V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2.5V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Model**: BUK9E06-55B-VB
- **Package**: TO262
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench technology
- **Model**: BUK9E06-55B-VB
- **Package**: TO262
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench technology
Domain and module applications：
Applications and modules
**1. High-power power management**
BUK9E06-55B-VB plays an important role in high-power power management systems. Its high drain current capability and extremely low on-resistance make it an ideal choice for DC-DC converters and switching power supplies. It can effectively handle high-power loads, reduce energy losses, and improve overall system efficiency.
**2. Industrial drive systems**
This MOSFET is suitable for industrial motor drives and automation control systems. Due to its ability to withstand large currents and low on-resistance, it is suitable for the control and drive of high-power motors, ensuring stable and efficient power transmission in industrial applications.
**3. Electric vehicles and battery management**
In electric vehicles and battery management systems, the high current handling capability and reliability of BUK9E06-55B-VB make it suitable for battery switches and power management modules. Its low on-resistance helps optimize the power output and charging efficiency of the battery, extending battery life.
**4. High-performance switch applications**
This MOSFET is also widely used in high-performance switch systems, such as high-power switches and load switching modules. Its high current capability and low on-resistance enable it to effectively control high-power loads and is suitable for various occasions requiring high-power switching.
These application examples show the superior performance of BUK9E06-55B-VB in high-current and high-power environments, making it a key component in various high-power and high-efficiency systems.
**1. High-power power management**
BUK9E06-55B-VB plays an important role in high-power power management systems. Its high drain current capability and extremely low on-resistance make it an ideal choice for DC-DC converters and switching power supplies. It can effectively handle high-power loads, reduce energy losses, and improve overall system efficiency.
**2. Industrial drive systems**
This MOSFET is suitable for industrial motor drives and automation control systems. Due to its ability to withstand large currents and low on-resistance, it is suitable for the control and drive of high-power motors, ensuring stable and efficient power transmission in industrial applications.
**3. Electric vehicles and battery management**
In electric vehicles and battery management systems, the high current handling capability and reliability of BUK9E06-55B-VB make it suitable for battery switches and power management modules. Its low on-resistance helps optimize the power output and charging efficiency of the battery, extending battery life.
**4. High-performance switch applications**
This MOSFET is also widely used in high-performance switch systems, such as high-power switches and load switching modules. Its high current capability and low on-resistance enable it to effectively control high-power loads and is suitable for various occasions requiring high-power switching.
These application examples show the superior performance of BUK9E06-55B-VB in high-current and high-power environments, making it a key component in various high-power and high-efficiency systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
