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BUK963R3-60E-VB Product details
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Product Introduction
**BUK963R3-60E-VB** is a high-performance N-Channel MOSFET in TO263 package, designed to handle medium voltage and high current applications. This MOSFET uses Trench technology to provide excellent conduction performance and low power consumption characteristics at high current and high switching frequency. Its maximum drain-source voltage (VDS) is 60V and the maximum drain current (ID) reaches 270A, which makes it excel in applications requiring high current handling and low power loss. The low on-resistance of BUK963R3-60E-VB ensures high efficiency and stability under various operating conditions.
**BUK963R3-60E-VB** is a high-performance N-Channel MOSFET in TO263 package, designed to handle medium voltage and high current applications. This MOSFET uses Trench technology to provide excellent conduction performance and low power consumption characteristics at high current and high switching frequency. Its maximum drain-source voltage (VDS) is 60V and the maximum drain current (ID) reaches 270A, which makes it excel in applications requiring high current handling and low power loss. The low on-resistance of BUK963R3-60E-VB ensures high efficiency and stability under various operating conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | 2.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: BUK963R3-60E-VB
- **Package**: TO263
- **Configuration**: Unipolar N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 7mΩ (VGS = 4.5V)
- 2.5mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 270A
- **Technology**: Trench
- **Model**: BUK963R3-60E-VB
- **Package**: TO263
- **Configuration**: Unipolar N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 7mΩ (VGS = 4.5V)
- 2.5mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 270A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **High-Power Switching Power Supplies**:
- In high-power switching power supplies, the BUK963R3-60E-VB is able to effectively handle high current loads while maintaining low on-resistance. This allows it to significantly reduce power losses during power conversion and improve overall system efficiency, making it ideal for applications such as power adapters, industrial power supplies, and computer power supplies.
2. **Motor Drive Systems**:
- For electric vehicles and industrial motor drive systems, the BUK963R3-60E-VB provides strong current handling capabilities and low on-resistance, enabling it to serve as the main switching element in motor drive circuits, providing stable and efficient motor control and ensuring efficient operation of the system.
3. **Inverters**:
- In inverter applications, such as solar inverters and wind power inverters, the high current carrying capacity and low on-resistance of BUK963R3-60E-VB enable it to efficiently handle current fluctuations, ensure inverter stability and efficiency, and improve energy conversion performance.
4. **Power Management and Distribution**:
- In power management and distribution systems, this MOSFET is able to handle large currents and maintain low power losses, making it suitable for use as a power distribution and switching module to ensure system stability and efficiency under high load conditions.
These application scenarios demonstrate the excellent performance of BUK963R3-60E-VB in high current and high efficiency applications, and are suitable for a variety of electronic devices and systems that need to handle high power and high current.
1. **High-Power Switching Power Supplies**:
- In high-power switching power supplies, the BUK963R3-60E-VB is able to effectively handle high current loads while maintaining low on-resistance. This allows it to significantly reduce power losses during power conversion and improve overall system efficiency, making it ideal for applications such as power adapters, industrial power supplies, and computer power supplies.
2. **Motor Drive Systems**:
- For electric vehicles and industrial motor drive systems, the BUK963R3-60E-VB provides strong current handling capabilities and low on-resistance, enabling it to serve as the main switching element in motor drive circuits, providing stable and efficient motor control and ensuring efficient operation of the system.
3. **Inverters**:
- In inverter applications, such as solar inverters and wind power inverters, the high current carrying capacity and low on-resistance of BUK963R3-60E-VB enable it to efficiently handle current fluctuations, ensure inverter stability and efficiency, and improve energy conversion performance.
4. **Power Management and Distribution**:
- In power management and distribution systems, this MOSFET is able to handle large currents and maintain low power losses, making it suitable for use as a power distribution and switching module to ensure system stability and efficiency under high load conditions.
These application scenarios demonstrate the excellent performance of BUK963R3-60E-VB in high current and high efficiency applications, and are suitable for a variety of electronic devices and systems that need to handle high power and high current.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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