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BUK963R2-40B-VB Product details
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Product Introduction
**BUK963R2-40B-VB** is a high-performance N-channel MOSFET in TO263 package based on Trench technology. Designed to handle medium to high voltage and high current applications, this MOSFET has excellent low on-resistance and high drain current capability, making it an excellent choice for a variety of power management and switching applications. Its high performance and reliability make it an ideal choice for scenarios requiring high performance and high stability.
**BUK963R2-40B-VB** is a high-performance N-channel MOSFET in TO263 package based on Trench technology. Designed to handle medium to high voltage and high current applications, this MOSFET has excellent low on-resistance and high drain current capability, making it an excellent choice for a variety of power management and switching applications. Its high performance and reliability make it an ideal choice for scenarios requiring high performance and high stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Application Examples
**BUK963R2-40B-VB** MOSFET features enable it to excel in multiple application areas:
1. **High-efficiency power switch**:
BUK963R2-40B-VB's extremely low on-resistance (2mΩ @ VGS = 10V) makes it excellent in high-efficiency power switch applications. It can significantly reduce switching losses and is suitable for key switching components in DC-DC converters and regulated power supplies, improving the energy efficiency and stability of the overall system.
2. **Electric vehicle drive system**:
In the power management and drive system of electric vehicles, this MOSFET's high current capability (150A) and withstand voltage (40V) ensure reliable performance. It can handle the high current requirements of high-power motors in electric vehicles, providing smooth drive and stable operation.
3. **Industrial Motor Control**:
Due to its high current handling capability and low on-resistance, the BUK963R2-40B-VB is ideal for industrial motor control systems. It is able to operate stably under high load conditions and ensure efficient control and reliability of industrial equipment, suitable for applications requiring high power and high efficiency.
4. **Switching Power Module**:
In switching power modules, the high current capability and low on-resistance of this MOSFET make it an ideal choice. It can effectively reduce power losses and optimize performance during power conversion, suitable for high-efficiency and high-reliability power supply designs.
These application examples show the important role of the BUK963R2-40B-VB in scenarios requiring high current and high efficiency, especially in power switching and high-power applications.
**BUK963R2-40B-VB** MOSFET features enable it to excel in multiple application areas:
1. **High-efficiency power switch**:
BUK963R2-40B-VB's extremely low on-resistance (2mΩ @ VGS = 10V) makes it excellent in high-efficiency power switch applications. It can significantly reduce switching losses and is suitable for key switching components in DC-DC converters and regulated power supplies, improving the energy efficiency and stability of the overall system.
2. **Electric vehicle drive system**:
In the power management and drive system of electric vehicles, this MOSFET's high current capability (150A) and withstand voltage (40V) ensure reliable performance. It can handle the high current requirements of high-power motors in electric vehicles, providing smooth drive and stable operation.
3. **Industrial Motor Control**:
Due to its high current handling capability and low on-resistance, the BUK963R2-40B-VB is ideal for industrial motor control systems. It is able to operate stably under high load conditions and ensure efficient control and reliability of industrial equipment, suitable for applications requiring high power and high efficiency.
4. **Switching Power Module**:
In switching power modules, the high current capability and low on-resistance of this MOSFET make it an ideal choice. It can effectively reduce power losses and optimize performance during power conversion, suitable for high-efficiency and high-reliability power supply designs.
These application examples show the important role of the BUK963R2-40B-VB in scenarios requiring high current and high efficiency, especially in power switching and high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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