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BUK9620-100B-VB Product details
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Product Introduction
**BUK9620-100B-VB** is a high-performance N-Channel MOSFET in TO263 package, designed for high voltage and high current applications. This MOSFET uses Trench technology, which can achieve low power consumption and high efficiency switching performance at higher voltage and current. Its maximum drain-source voltage (VDS) reaches 100V and the maximum drain current (ID) is 100A, which makes it very suitable for applications requiring high current and high voltage. The low on-resistance characteristics of BUK9620-100B-VB enable it to achieve higher energy efficiency and lower power consumption in various electronic circuits.
**BUK9620-100B-VB** is a high-performance N-Channel MOSFET in TO263 package, designed for high voltage and high current applications. This MOSFET uses Trench technology, which can achieve low power consumption and high efficiency switching performance at higher voltage and current. Its maximum drain-source voltage (VDS) reaches 100V and the maximum drain current (ID) is 100A, which makes it very suitable for applications requiring high current and high voltage. The low on-resistance characteristics of BUK9620-100B-VB enable it to achieve higher energy efficiency and lower power consumption in various electronic circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: BUK9620-100B-VB
- **Package**: TO263
- **Configuration**: Unipolar N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ (VGS = 4.5V)
- 10mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
- **Model**: BUK9620-100B-VB
- **Package**: TO263
- **Configuration**: Unipolar N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ (VGS = 4.5V)
- 10mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **High-Power Switching Power Supplies**:
- The high voltage and high current capabilities of the BUK9620-100B-VB make it suitable for high-power switching power supply applications. In these power supplies, it can effectively handle large currents and ensure low power losses and high conversion efficiency, making it suitable for use in computer power supplies, industrial power supplies, and other high-power power supply modules.
2. **Motor Drive Circuits**:
- In electric vehicles and industrial motor drive systems, this MOSFET can withstand high voltages and high currents, making it suitable as the main switching element in motor drive circuits. Its low on-resistance and high current handling capabilities ensure efficient motor control and reliability.
3. **Inverters**:
- In inverter applications, such as solar inverters and wind inverters, the high voltage and high current capabilities of the BUK9620-100B-VB enable stable operation. Its excellent on-resistance performance improves the overall efficiency and reliability of the system.
4. **Power Management Modules**:
- Among various power management modules, the BUK9620-100B-VB is able to efficiently handle high current loads. Its low RDS(ON) characteristics reduce energy losses and improve overall system performance during power management and power conversion.
These application areas demonstrate the superior performance of the BUK9620-100B-VB in handling high voltage and high current scenarios, and its wide applicability in different modules.
1. **High-Power Switching Power Supplies**:
- The high voltage and high current capabilities of the BUK9620-100B-VB make it suitable for high-power switching power supply applications. In these power supplies, it can effectively handle large currents and ensure low power losses and high conversion efficiency, making it suitable for use in computer power supplies, industrial power supplies, and other high-power power supply modules.
2. **Motor Drive Circuits**:
- In electric vehicles and industrial motor drive systems, this MOSFET can withstand high voltages and high currents, making it suitable as the main switching element in motor drive circuits. Its low on-resistance and high current handling capabilities ensure efficient motor control and reliability.
3. **Inverters**:
- In inverter applications, such as solar inverters and wind inverters, the high voltage and high current capabilities of the BUK9620-100B-VB enable stable operation. Its excellent on-resistance performance improves the overall efficiency and reliability of the system.
4. **Power Management Modules**:
- Among various power management modules, the BUK9620-100B-VB is able to efficiently handle high current loads. Its low RDS(ON) characteristics reduce energy losses and improve overall system performance during power management and power conversion.
These application areas demonstrate the superior performance of the BUK9620-100B-VB in handling high voltage and high current scenarios, and its wide applicability in different modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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