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BUK961R6-40E-VB Product details
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BUK961R6-40E-VB MOSFET Product Introduction
**BUK961R6-40E-VB** is a high-performance single N-channel MOSFET in TO263 package, designed for high current and high efficiency applications. This MOSFET uses Trench technology, with ultra-low on-resistance and extremely high drain current capability, making it very suitable for high power and high switching efficiency circuits. Its excellent electrical performance enables it to perform well in power management, switching power supplies, motor drives and other fields.
**BUK961R6-40E-VB** is a high-performance single N-channel MOSFET in TO263 package, designed for high current and high efficiency applications. This MOSFET uses Trench technology, with ultra-low on-resistance and extremely high drain current capability, making it very suitable for high power and high switching efficiency circuits. Its excellent electrical performance enables it to perform well in power management, switching power supplies, motor drives and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Applications and module examples: 1. Switching Power Supplies: BUK961R6-40E-VB MOSFET excels in switching power supply applications due to its ultra-low on-resistance and high current handling capability. Its low power consumption helps reduce heat generation and improve power conversion efficiency, making it suitable for high-power power supply designs to ensure system stability and high performance. 2. DC-DC Converters: BUK961R6-40E-VB offers extremely low RDS(ON) and high current capability in DC-DC converters, making it suitable for battery-powered systems and high-performance power management modules. It can efficiently perform voltage conversion and current management, ensuring the stability and efficiency of the power system, and is suitable for a variety of high current conversion applications.
3. **Motor Drives**:
Due to its high current carrying capacity and ultra-low on-resistance, the BUK961R6-40E-VB is ideal for motor drive applications. It can effectively drive high-power motors and handle high current loads, ensuring stable operation of motors under high load conditions, and improving the performance and reliability of motor drive systems.
4. **Power Amplifiers**:
In power amplifier circuits, the BUK961R6-40E-VB is capable of handling high-power signals, and its ultra-low on-resistance reduces power loss, making it suitable for broadcast, communication and other high-power amplification applications. It improves the overall performance and efficiency of the system, making it an excellent performer in scenarios requiring high power and high efficiency.
5. **Power Management**:
As a key component in power management systems, the BUK961R6-40E-VB MOSFET can be used in applications such as power switching, power distribution and battery management. Its excellent switching performance and low power consumption characteristics optimize the efficiency and stability of the power system and are suitable for power management designs that require high current and high power handling.
These application examples demonstrate the advantages of BUK961R6-40E-VB MOSFET in high current, high power and high efficiency applications, making it play an important role in modern electronic systems.
3. **Motor Drives**:
Due to its high current carrying capacity and ultra-low on-resistance, the BUK961R6-40E-VB is ideal for motor drive applications. It can effectively drive high-power motors and handle high current loads, ensuring stable operation of motors under high load conditions, and improving the performance and reliability of motor drive systems.
4. **Power Amplifiers**:
In power amplifier circuits, the BUK961R6-40E-VB is capable of handling high-power signals, and its ultra-low on-resistance reduces power loss, making it suitable for broadcast, communication and other high-power amplification applications. It improves the overall performance and efficiency of the system, making it an excellent performer in scenarios requiring high power and high efficiency.
5. **Power Management**:
As a key component in power management systems, the BUK961R6-40E-VB MOSFET can be used in applications such as power switching, power distribution and battery management. Its excellent switching performance and low power consumption characteristics optimize the efficiency and stability of the power system and are suitable for power management designs that require high current and high power handling.
These application examples demonstrate the advantages of BUK961R6-40E-VB MOSFET in high current, high power and high efficiency applications, making it play an important role in modern electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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