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BUK961R4-30E-VB Product details
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BUK961R4-30E-VB Product Introduction
**BUK961R4-30E-VB** is a high-performance N-channel MOSFET in a TO263 package using Trench technology. This MOSFET has extremely low on-resistance and high current carrying capacity, making it ideal for applications that require high performance and high load capacity. Its design features include ultra-low on-resistance and high drain-source voltage, which enable it to excel in high current applications, significantly reducing power consumption and improving system efficiency.
**BUK961R4-30E-VB** is a high-performance N-channel MOSFET in a TO263 package using Trench technology. This MOSFET has extremely low on-resistance and high current carrying capacity, making it ideal for applications that require high performance and high load capacity. Its design features include ultra-low on-resistance and high drain-source voltage, which enable it to excel in high current applications, significantly reducing power consumption and improving system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 260A | 1.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 260A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 260A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single-stage N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON)）**:
- 1.4mΩ @ VGS = 10V
- 1.6mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 260A
- **Technology**: Trench technology
- **Package type**: TO263
- **Configuration**: Single-stage N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON)）**:
- 1.4mΩ @ VGS = 10V
- 1.6mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 260A
- **Technology**: Trench technology
Domain and module applications：
Applications and Modules
1. **Power Management**
- **Switching Power Supply (SMPS)**: In switching power supply design, the extremely low on-resistance and high current handling capability of BUK961R4-30E-VB make it an ideal switching element. It can significantly reduce switching losses and improve system efficiency, and is suitable for high current power management and high-efficiency power conversion applications.
2. **Motor Drive**
- **High Power Motor Control**: In motor drive applications, such as DC motor or stepper motor control, the high current carrying capability and ultra-low on-resistance of BUK961R4-30E-VB ensure efficient and stable operation of the motor. Its low RDS(ON) characteristics help reduce power consumption and heat generation, improving system reliability and efficiency.
3. **Power Conversion**
- **DC-DC Converters**: In DC-DC converters, the low on-resistance and high current handling capability of the BUK961R4-30E-VB can optimize power conversion efficiency. It reduces energy loss and improves the conversion efficiency of the overall system, suitable for various voltage conversion and power regulation applications.
4. **Automotive Electronics**
- **Automotive High Power Applications**: In automotive electronic devices such as electric seat adjustment and high-power headlight control, the high current capability and low power consumption of the BUK961R4-30E-VB make it the preferred MOSFET. It is able to maintain stable performance under high load conditions, meeting the high load requirements in automotive electronics.
These examples of application areas demonstrate the excellent performance of the BUK961R4-30E-VB, making it an indispensable component in high current and high efficiency applications.
1. **Power Management**
- **Switching Power Supply (SMPS)**: In switching power supply design, the extremely low on-resistance and high current handling capability of BUK961R4-30E-VB make it an ideal switching element. It can significantly reduce switching losses and improve system efficiency, and is suitable for high current power management and high-efficiency power conversion applications.
2. **Motor Drive**
- **High Power Motor Control**: In motor drive applications, such as DC motor or stepper motor control, the high current carrying capability and ultra-low on-resistance of BUK961R4-30E-VB ensure efficient and stable operation of the motor. Its low RDS(ON) characteristics help reduce power consumption and heat generation, improving system reliability and efficiency.
3. **Power Conversion**
- **DC-DC Converters**: In DC-DC converters, the low on-resistance and high current handling capability of the BUK961R4-30E-VB can optimize power conversion efficiency. It reduces energy loss and improves the conversion efficiency of the overall system, suitable for various voltage conversion and power regulation applications.
4. **Automotive Electronics**
- **Automotive High Power Applications**: In automotive electronic devices such as electric seat adjustment and high-power headlight control, the high current capability and low power consumption of the BUK961R4-30E-VB make it the preferred MOSFET. It is able to maintain stable performance under high load conditions, meeting the high load requirements in automotive electronics.
These examples of application areas demonstrate the excellent performance of the BUK961R4-30E-VB, making it an indispensable component in high current and high efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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