中文
English
BUK9608-55A-VB Product details
Back to previous pageProduct introduction：
BUK9608-55A-VB MOSFET Product Introduction
**BUK9608-55A-VB** is a high-performance single N-channel MOSFET in TO263 package, designed for high current and high efficiency applications. This MOSFET uses Trench technology, has extremely low on-resistance and high drain current capability, and is suitable for circuits requiring high current and high switching efficiency. With its excellent electrical characteristics, BUK9608-55A-VB is suitable for high power applications such as power management, switching power supplies and motor drives.
**BUK9608-55A-VB** is a high-performance single N-channel MOSFET in TO263 package, designed for high current and high efficiency applications. This MOSFET uses Trench technology, has extremely low on-resistance and high drain current capability, and is suitable for circuits requiring high current and high switching efficiency. With its excellent electrical characteristics, BUK9608-55A-VB is suitable for high power applications such as power management, switching power supplies and motor drives.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **Switching Power Supplies**:
The BUK9608-55A-VB MOSFET can provide extremely low on-resistance in switching power supply applications, significantly reducing power consumption and heat generation. It is suitable for high-power switching power supply modules to improve power conversion efficiency and system stability.
2. **DC-DC Converters**:
In DC-DC converters, the high current handling capability and low RDS(ON) characteristics of the BUK9608-55A-VB make it an ideal switching element. It can efficiently convert voltages and is suitable for battery-powered systems and high-performance power management modules to ensure stable power conversion and efficient current management.
3. **Motor Drives**:
The high drain current capability of this MOSFET makes it ideal for motor drive applications. Its low on-resistance and high current carrying capacity can effectively drive high-power motors, handle high-current loads, ensure the stability and efficiency of motor drivers, and are suitable for various industrial motor control systems.
4. **Power Amplifiers**:
In power amplifier circuits, BUK9608-55A-VB can efficiently process high-power signals. Its low on-resistance reduces power loss and is suitable for broadcasting, communications and other high-power amplification applications, improving the overall performance and efficiency of the system.
5. **Power Management**:
As a key component in power management systems, BUK9608-55A-VB MOSFET can be used in applications such as power switching, power distribution and battery management. Its excellent switching performance and low power consumption characteristics optimize the efficiency and stability of the power system and are suitable for power management designs with high current and high power requirements.
These application examples demonstrate the advantages of the BUK9608-55A-VB MOSFET in high current, high power and high efficiency applications, making it an important switching component in modern electronic systems.
1. **Switching Power Supplies**:
The BUK9608-55A-VB MOSFET can provide extremely low on-resistance in switching power supply applications, significantly reducing power consumption and heat generation. It is suitable for high-power switching power supply modules to improve power conversion efficiency and system stability.
2. **DC-DC Converters**:
In DC-DC converters, the high current handling capability and low RDS(ON) characteristics of the BUK9608-55A-VB make it an ideal switching element. It can efficiently convert voltages and is suitable for battery-powered systems and high-performance power management modules to ensure stable power conversion and efficient current management.
3. **Motor Drives**:
The high drain current capability of this MOSFET makes it ideal for motor drive applications. Its low on-resistance and high current carrying capacity can effectively drive high-power motors, handle high-current loads, ensure the stability and efficiency of motor drivers, and are suitable for various industrial motor control systems.
4. **Power Amplifiers**:
In power amplifier circuits, BUK9608-55A-VB can efficiently process high-power signals. Its low on-resistance reduces power loss and is suitable for broadcasting, communications and other high-power amplification applications, improving the overall performance and efficiency of the system.
5. **Power Management**:
As a key component in power management systems, BUK9608-55A-VB MOSFET can be used in applications such as power switching, power distribution and battery management. Its excellent switching performance and low power consumption characteristics optimize the efficiency and stability of the power system and are suitable for power management designs with high current and high power requirements.
These application examples demonstrate the advantages of the BUK9608-55A-VB MOSFET in high current, high power and high efficiency applications, making it an important switching component in modern electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
