Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
40V |
|
3V |
180A |
|
|
2mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
40V |
|
3V |
180A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
40V |
|
3V |
180A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Package**: TO220
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 15mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 180A
- **Technology**: Trench
Domain and module applications:
Application Examples
The high performance characteristics of the **BUK952R3-40E-VB** MOSFET make it suitable for a variety of fields and modules:
1. **Power Conversion and Management**:
In efficient power converters and power management systems, the low RDS(ON) value of the BUK952R3-40E-VB can significantly reduce power losses and improve conversion efficiency. This makes it particularly suitable for use in DC-DC converters and power modules to provide efficient power conversion and stable power output.
2. **High Current Drive**:
Due to its drain current capability of up to 180A, this MOSFET is ideal for applications that need to handle high currents, such as electric vehicle drive systems or large industrial motor controls. Its high current handling capability ensures reliable operation and long life under high load conditions.
3. **Power Switch Applications**:
In various power switch applications, such as inverters and power switches, the BUK952R3-40E-VB is able to provide efficient switching operations. Its low on-resistance helps reduce switching losses and heat, improving the overall efficiency and stability of the system.
4. **Electric Vehicles and High-Power Devices**:
Due to its high withstand voltage (40V) and extremely low on-resistance, the BUK952R3-40E-VB is very suitable in the power system of electric vehicles and other high-power devices. This MOSFET can handle high-power loads and optimize energy transfer, improving the performance and reliability of equipment.
These application examples show the importance of the BUK952R3-40E-VB in high-current and high-power scenarios, especially in areas that require high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours