Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
40V |
|
3V |
180A |
|
|
2mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
40V |
|
3V |
180A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
40V |
|
3V |
180A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Package**: TO220
- **Configuration**: Single N-channel
- **Drain-source voltage (V_DS)**: 40V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(ON))**:
- 15mΩ @ V_GS = 4.5V
- 2mΩ @ V_GS = 10V
- **Maximum leakage current (I_D)**: 180A
- **Technology**: Trench technology
Domain and module applications:
Applications and module examples: 1. Power management modules: The low on-resistance of the BUK951R9-40E-VB makes it an ideal choice for high-efficiency power management systems. In DC-DC converters and power supplies, this MOSFET can provide extremely low power losses, improving overall system efficiency. 2. Electric vehicle (EV) drive systems: Due to its high current carrying capacity and excellent switching performance, the BUK951R9-40E-VB is suitable for use in electric vehicle drive systems. It can provide stable current control in the motor drive circuit of an electric vehicle, thereby optimizing the operating efficiency of the motor. 3. Switching mode power supply (SMPS): In switching mode power supply applications, the BUK951R9-40E-VB can be used as the main switching device. Its low R_DS(ON) reduces switching losses and heat generation, ensuring stable operation of the power module under high loads.
**4. High-power LED driver**:
In high-power LED driver circuits, the high current capability and low on-resistance of BUK951R9-40E-VB can effectively manage the LED drive current, improve the brightness and stability of the LED, and reduce power consumption.
The above is the product introduction, detailed parameter description and application examples of the BUK951R9-40E-VB MOSFET in its applicable fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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