中文
English
BUK9225-55A-VB Product details
Back to previous pageProduct introduction：
Product Overview: BUK9225-55A-VB
BUK9225-55A-VB is a high-performance unipolar N-channel MOSFET in a TO252 package, designed to handle high current and high voltage applications. It has a drain-source voltage (V_DS) of 60V and a gate-source voltage (V_GS) of ±20V, and a threshold voltage (V_th) of 2.5V. Its on-resistance (R_DS(on)) is 13mΩ at a gate-source voltage of 4.5V and 10mΩ at 10V, and the maximum drain current (I_D) is 58A. This MOSFET uses Trench technology, has low conduction losses and efficient switching characteristics, and is very suitable for applications requiring high power and high current.
BUK9225-55A-VB is a high-performance unipolar N-channel MOSFET in a TO252 package, designed to handle high current and high voltage applications. It has a drain-source voltage (V_DS) of 60V and a gate-source voltage (V_GS) of ±20V, and a threshold voltage (V_th) of 2.5V. Its on-resistance (R_DS(on)) is 13mΩ at a gate-source voltage of 4.5V and 10mΩ at 10V, and the maximum drain current (I_D) is 58A. This MOSFET uses Trench technology, has low conduction losses and efficient switching characteristics, and is very suitable for applications requiring high power and high current.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Drain-Source Voltage (V_DS):** 60V
- This is the maximum voltage between the drain and source that the MOSFET can withstand.
- **Gate-Source Voltage (V_GS):** ±20V
- The maximum voltage allowed to be applied between the gate and source of the MOSFET.
- **Threshold Voltage (V_th):** 2.5V
- The minimum gate-source voltage required for the MOSFET to start conducting.
- **On-Resistance (R_DS(on)):** 13mΩ @ V_GS = 4.5V
- The resistance between the drain and source of the MOSFET in the on state when the gate-source voltage is 4.5V.
- **On-resistance (R_DS(on)):** 10mΩ @ V_GS = 10V
- The resistance between the drain and source of the MOSFET in the on state when the gate-source voltage is 10V.
- **Maximum continuous drain current (I_D):** 58A
- The maximum continuous current that the drain terminal of the MOSFET can handle under proper heat dissipation conditions.
- **Package type:** TO252
- The physical package of the MOSFET that is suitable for heat dissipation requirements and provides good mechanical strength in a compact space.
- **Configuration:** Unipolar N-channel
- Indicates that the MOSFET has a single N-channel for current conduction.
- **Technology:** Trench
- Indicates that the MOSFET adopts Trench technology to provide low conduction losses and efficient switching performance.
- **Drain-Source Voltage (V_DS):** 60V
- This is the maximum voltage between the drain and source that the MOSFET can withstand.
- **Gate-Source Voltage (V_GS):** ±20V
- The maximum voltage allowed to be applied between the gate and source of the MOSFET.
- **Threshold Voltage (V_th):** 2.5V
- The minimum gate-source voltage required for the MOSFET to start conducting.
- **On-Resistance (R_DS(on)):** 13mΩ @ V_GS = 4.5V
- The resistance between the drain and source of the MOSFET in the on state when the gate-source voltage is 4.5V.
- **On-resistance (R_DS(on)):** 10mΩ @ V_GS = 10V
- The resistance between the drain and source of the MOSFET in the on state when the gate-source voltage is 10V.
- **Maximum continuous drain current (I_D):** 58A
- The maximum continuous current that the drain terminal of the MOSFET can handle under proper heat dissipation conditions.
- **Package type:** TO252
- The physical package of the MOSFET that is suitable for heat dissipation requirements and provides good mechanical strength in a compact space.
- **Configuration:** Unipolar N-channel
- Indicates that the MOSFET has a single N-channel for current conduction.
- **Technology:** Trench
- Indicates that the MOSFET adopts Trench technology to provide low conduction losses and efficient switching performance.
Domain and module applications：
Application Examples
**1. Power Management Systems: **
- The BUK9225-55A-VB MOSFET is used as a switch in power management systems, such as DC-DC converters and power distribution modules. Due to its low on-resistance and high current handling capability, this MOSFET can reduce power losses, improve power efficiency, and ensure stable system operation.
**2. Electric Vehicle Control: **
- In the drive system of electric vehicles, the BUK9225-55A-VB MOSFET can be used for motor drive and battery management. Its high current capability and low on-resistance make it an ideal choice for motor drive and battery protection circuits in electric vehicles, helping to improve vehicle performance and endurance.
**3. Industrial Automation: **
- This MOSFET is also suitable for load switching and motor control in industrial automation. Due to its efficient switching characteristics and low on-resistance, it can effectively control high-power loads in industrial equipment, improving the operating efficiency and reliability of the equipment.
**4. Computer power systems:**
- In computer power systems, BUK9225-55A-VB MOSFET can be used for efficient power switching and regulation. Its excellent electrical characteristics and low conduction losses can ensure efficient and stable operation of computer power supplies, ensuring the reliability and performance of computer systems.
**5. Solar inverters:**
- This MOSFET is often used as an efficient switching component in solar inverters. Its high current handling capability and low on-resistance can effectively improve the efficiency of the inverter and enhance the overall performance of the solar system.
BUK9225-55A-VB MOSFET has become an important component in various electronic designs due to its excellent electrical performance and ability to adapt to a variety of high-power applications.
**1. Power Management Systems: **
- The BUK9225-55A-VB MOSFET is used as a switch in power management systems, such as DC-DC converters and power distribution modules. Due to its low on-resistance and high current handling capability, this MOSFET can reduce power losses, improve power efficiency, and ensure stable system operation.
**2. Electric Vehicle Control: **
- In the drive system of electric vehicles, the BUK9225-55A-VB MOSFET can be used for motor drive and battery management. Its high current capability and low on-resistance make it an ideal choice for motor drive and battery protection circuits in electric vehicles, helping to improve vehicle performance and endurance.
**3. Industrial Automation: **
- This MOSFET is also suitable for load switching and motor control in industrial automation. Due to its efficient switching characteristics and low on-resistance, it can effectively control high-power loads in industrial equipment, improving the operating efficiency and reliability of the equipment.
**4. Computer power systems:**
- In computer power systems, BUK9225-55A-VB MOSFET can be used for efficient power switching and regulation. Its excellent electrical characteristics and low conduction losses can ensure efficient and stable operation of computer power supplies, ensuring the reliability and performance of computer systems.
**5. Solar inverters:**
- This MOSFET is often used as an efficient switching component in solar inverters. Its high current handling capability and low on-resistance can effectively improve the efficiency of the inverter and enhance the overall performance of the solar system.
BUK9225-55A-VB MOSFET has become an important component in various electronic designs due to its excellent electrical performance and ability to adapt to a variety of high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
