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BUK7Y7R6-40E-VB Product details
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Product Introduction
BUK7Y7R6-40E-VB is a high-performance N-channel MOSFET using Trench technology in SOT669 package. This MOSFET has excellent electrical performance and is particularly suitable for high power and high efficiency applications. Its maximum drain-source voltage (VDS) is 40V and its maximum drain current (ID) is 100A. The low on-resistance (RDS(ON)) is 2.4mΩ at VGS=4.5V and drops to 2mΩ at VGS=10V, ensuring excellent power conversion efficiency and low power operation, making it ideal for power management and high current switching applications.
BUK7Y7R6-40E-VB is a high-performance N-channel MOSFET using Trench technology in SOT669 package. This MOSFET has excellent electrical performance and is particularly suitable for high power and high efficiency applications. Its maximum drain-source voltage (VDS) is 40V and its maximum drain current (ID) is 100A. The low on-resistance (RDS(ON)) is 2.4mΩ at VGS=4.5V and drops to 2mΩ at VGS=10V, ensuring excellent power conversion efficiency and low power operation, making it ideal for power management and high current switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
- **Package type**: SOT669
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 2.4mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Drain current (ID)**: 100A
- **Technology**: Trench
- **Other key parameters**:
- **Power dissipation (Ptot)**: Typical value is 6W
- **Junction-to-ambient thermal resistance (RθJA)**: Maximum value is 40°C/W
- **Junction to case thermal resistance (RθJC)**: 2.5°C/W maximum
- **Operating temperature range (Tj)**: -55°C to +175°C
- **Package type**: SOT669
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 2.4mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Drain current (ID)**: 100A
- **Technology**: Trench
- **Other key parameters**:
- **Power dissipation (Ptot)**: Typical value is 6W
- **Junction-to-ambient thermal resistance (RθJA)**: Maximum value is 40°C/W
- **Junction to case thermal resistance (RθJC)**: 2.5°C/W maximum
- **Operating temperature range (Tj)**: -55°C to +175°C
Domain and module applications：
Application fields and module examples
The excellent performance of BUK7Y7R6-40E-VB MOSFET makes it suitable for multiple high-power and high-efficiency applications. The following are some major application examples:
1. **High-power switching power supply**: In high-power switching power supply, BUK7Y7R6-40E-VB MOSFET is used to efficiently control power switches and optimize power conversion efficiency. It is suitable for computer power supply, communication power supply and other high-power power supply systems.
2. **Battery management system**: In battery management systems, such as battery management modules for electric vehicles and hybrid vehicles, this MOSFET is able to handle high currents, provide reliable switching functions, and ensure the efficiency and safety of the system.
3. **Industrial motor drive**: In industrial automation equipment, such as motor drive systems, BUK7Y7R6-40E-VB MOSFET is used to drive and control high-power loads, providing stable performance and efficient power conversion.
4. **Power Regulator**: In power regulators, this MOSFET is used to optimize current control and power conversion, and is suitable for use in high-efficiency power regulators and regulated power supplies.
5. **Portable Electronic Devices**: In portable electronic devices such as smartphones, tablets, and other mobile devices, the BUK7Y7R6-40E-VB MOSFET is used for efficient power switching and current control to optimize the energy efficiency and performance of the device.
The BUK7Y7R6-40E-VB MOSFET is an ideal choice for a variety of high-power and high-efficiency applications due to its high current carrying capability, low on-resistance, and high efficiency.
The excellent performance of BUK7Y7R6-40E-VB MOSFET makes it suitable for multiple high-power and high-efficiency applications. The following are some major application examples:
1. **High-power switching power supply**: In high-power switching power supply, BUK7Y7R6-40E-VB MOSFET is used to efficiently control power switches and optimize power conversion efficiency. It is suitable for computer power supply, communication power supply and other high-power power supply systems.
2. **Battery management system**: In battery management systems, such as battery management modules for electric vehicles and hybrid vehicles, this MOSFET is able to handle high currents, provide reliable switching functions, and ensure the efficiency and safety of the system.
3. **Industrial motor drive**: In industrial automation equipment, such as motor drive systems, BUK7Y7R6-40E-VB MOSFET is used to drive and control high-power loads, providing stable performance and efficient power conversion.
4. **Power Regulator**: In power regulators, this MOSFET is used to optimize current control and power conversion, and is suitable for use in high-efficiency power regulators and regulated power supplies.
5. **Portable Electronic Devices**: In portable electronic devices such as smartphones, tablets, and other mobile devices, the BUK7Y7R6-40E-VB MOSFET is used for efficient power switching and current control to optimize the energy efficiency and performance of the device.
The BUK7Y7R6-40E-VB MOSFET is an ideal choice for a variety of high-power and high-efficiency applications due to its high current carrying capability, low on-resistance, and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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