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BUK7Y7R2-60E-VB Product details
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BUK7Y7R2-60E-VB MOSFET Product Introduction
BUK7Y7R2-60E-VB is a single N-channel MOSFET with SOT669 package type, designed for high-performance applications. This MOSFET adopts Trench technology, has high current carrying capacity and low on-resistance, and is suitable for applications requiring high-performance switching control. Its maximum drain-source voltage (VDS) is 60V, the maximum gate-source voltage (VGS) is ±20V, and the threshold voltage (Vth) is 2.4V. When the gate-source voltage of BUK7Y7R2-60E-VB is 4.5V, its on-resistance (RDS(ON)) is 3.48mΩ, and when the gate-source voltage is 10V, the on-resistance drops to 2.9mΩ. This MOSFET supports a continuous drain current (ID) of up to 100A.
BUK7Y7R2-60E-VB is a single N-channel MOSFET with SOT669 package type, designed for high-performance applications. This MOSFET adopts Trench technology, has high current carrying capacity and low on-resistance, and is suitable for applications requiring high-performance switching control. Its maximum drain-source voltage (VDS) is 60V, the maximum gate-source voltage (VGS) is ±20V, and the threshold voltage (Vth) is 2.4V. When the gate-source voltage of BUK7Y7R2-60E-VB is 4.5V, its on-resistance (RDS(ON)) is 3.48mΩ, and when the gate-source voltage is 10V, the on-resistance drops to 2.9mΩ. This MOSFET supports a continuous drain current (ID) of up to 100A.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 2.4V | 100A | 2.9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 2.4V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 2.4V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
- **Package type**: SOT669
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.4V
- **On-resistance (RDS(ON))**:
- 3.48mΩ @ VGS = 4.5V
- 2.9mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench
- **Package type**: SOT669
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.4V
- **On-resistance (RDS(ON))**:
- 3.48mΩ @ VGS = 4.5V
- 2.9mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Application Examples
1. **High Power Switching Power Supply**:
- The low on-resistance and high current handling capability of the BUK7Y7R2-60E-VB make it ideal for use in high power switching power supplies. It can effectively manage high current loads, reduce power loss, and improve the overall efficiency of the power supply, and is widely used in various power converters and high power power modules.
2. **Electric Vehicle (EV) Battery Management System**:
- In the battery management system of electric vehicles, this MOSFET can effectively handle the high current and high voltage of the battery pack to ensure the stability of the charging and discharging process. Its low on-resistance can improve the efficiency of the system, reduce heat generation, and enhance the performance and reliability of the battery management system.
3. **Industrial Motor Drive**:
- For industrial motor drive applications that require high current and low on-resistance, the BUK7Y7R2-60E-VB is an ideal choice. It can provide stable current output in motor control systems, enhance the performance and reliability of the system, and is suitable for various motor drives and control modules.
4. **LED Driver Circuit**:
- In LED driver circuits, the low on-resistance of BUK7Y7R2-60E-VB can effectively manage high current loads, ensuring stable brightness and long life of the LED. It is suitable for high-power LED driver applications, helping to improve the efficiency and stability of the circuit.
5. **High-power Inverters and Power Converters**:
- This MOSFET performs well in high-power inverters and power converters, capable of handling high voltage and high current switching operations. Its low on-resistance and high current capability make it suitable for high-efficiency energy conversion and power processing applications.
1. **High Power Switching Power Supply**:
- The low on-resistance and high current handling capability of the BUK7Y7R2-60E-VB make it ideal for use in high power switching power supplies. It can effectively manage high current loads, reduce power loss, and improve the overall efficiency of the power supply, and is widely used in various power converters and high power power modules.
2. **Electric Vehicle (EV) Battery Management System**:
- In the battery management system of electric vehicles, this MOSFET can effectively handle the high current and high voltage of the battery pack to ensure the stability of the charging and discharging process. Its low on-resistance can improve the efficiency of the system, reduce heat generation, and enhance the performance and reliability of the battery management system.
3. **Industrial Motor Drive**:
- For industrial motor drive applications that require high current and low on-resistance, the BUK7Y7R2-60E-VB is an ideal choice. It can provide stable current output in motor control systems, enhance the performance and reliability of the system, and is suitable for various motor drives and control modules.
4. **LED Driver Circuit**:
- In LED driver circuits, the low on-resistance of BUK7Y7R2-60E-VB can effectively manage high current loads, ensuring stable brightness and long life of the LED. It is suitable for high-power LED driver applications, helping to improve the efficiency and stability of the circuit.
5. **High-power Inverters and Power Converters**:
- This MOSFET performs well in high-power inverters and power converters, capable of handling high voltage and high current switching operations. Its low on-resistance and high current capability make it suitable for high-efficiency energy conversion and power processing applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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