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BUK7Y72-80E-VB Product details
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BUK7Y72-80E-VB MOSFET Product Introduction
BUK7Y72-80E-VB is a high-performance N-channel MOSFET in SOT669 package with 80V drain-source voltage (V_DS) and ±20V gate-source voltage (V_GS). Its threshold voltage (V_th) is 1.4V, indicating that it can start to conduct at low voltage. This MOSFET adopts Trench technology and has a low on-state resistance (R_DS(ON)) of 7.2 mΩ at V_GS of 4.5V and 6 mΩ at V_GS of 10V. Its high drain current (I_D) of up to 90A makes it suitable for applications with high current loads.
BUK7Y72-80E-VB is a high-performance N-channel MOSFET in SOT669 package with 80V drain-source voltage (V_DS) and ±20V gate-source voltage (V_GS). Its threshold voltage (V_th) is 1.4V, indicating that it can start to conduct at low voltage. This MOSFET adopts Trench technology and has a low on-state resistance (R_DS(ON)) of 7.2 mΩ at V_GS of 4.5V and 6 mΩ at V_GS of 10V. Its high drain current (I_D) of up to 90A makes it suitable for applications with high current loads.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
1. **Package**: SOT669
- Small and compact package design, suitable for applications with limited space and provides good heat dissipation performance.
2. **Configuration**: Single N-channel
- Suitable for efficient switching and control circuits, especially for application scenarios requiring high current and high efficiency performance.
3. **V_DS (drain-source voltage)**: 80V
- Suitable for applications handling medium voltages, and can stably withstand drain-source voltages up to 80V.
4. **V_GS (gate-source voltage)**: ±20V
- Provides flexible gate drive voltage to meet different circuit design requirements.
5. **V_th (threshold voltage)**: 1.4V
- At this voltage, the MOSFET starts to turn on, suitable for efficient switching operation at low voltages.
6. **R_DS(ON)**:
- 7.2 mΩ @ V_GS = 4.5V
- 6 mΩ @ V_GS = 10V
- Low on-resistance reduces power consumption and improves overall circuit efficiency.
7. **I_D (Continuous Drain Current)**: 90A
- Supports high current loads and is suitable for high current handling applications.
8. **Technology**: Trench
- Using Trench technology, it provides excellent switching performance and low on-resistance, suitable for high-efficiency circuit design.
1. **Package**: SOT669
- Small and compact package design, suitable for applications with limited space and provides good heat dissipation performance.
2. **Configuration**: Single N-channel
- Suitable for efficient switching and control circuits, especially for application scenarios requiring high current and high efficiency performance.
3. **V_DS (drain-source voltage)**: 80V
- Suitable for applications handling medium voltages, and can stably withstand drain-source voltages up to 80V.
4. **V_GS (gate-source voltage)**: ±20V
- Provides flexible gate drive voltage to meet different circuit design requirements.
5. **V_th (threshold voltage)**: 1.4V
- At this voltage, the MOSFET starts to turn on, suitable for efficient switching operation at low voltages.
6. **R_DS(ON)**:
- 7.2 mΩ @ V_GS = 4.5V
- 6 mΩ @ V_GS = 10V
- Low on-resistance reduces power consumption and improves overall circuit efficiency.
7. **I_D (Continuous Drain Current)**: 90A
- Supports high current loads and is suitable for high current handling applications.
8. **Technology**: Trench
- Using Trench technology, it provides excellent switching performance and low on-resistance, suitable for high-efficiency circuit design.
Domain and module applications：
Application Examples
**1. Power Management Module: **
- **Field**: Switching Power Supply
- **Example**: In the switching power supply module, BUK7Y72-80E-VB effectively reduces power consumption and improves system efficiency through its low on-state resistance and high current handling capability, and is suitable for DC-DC converters and high-power power supply modules.
**2. Electric Vehicles: **
- **Field**: Battery Management and Motor Drive
- **Example**: In the battery management system and motor drive control of electric vehicles, BUK7Y72-80E-VB can efficiently handle the high current load of the battery and motor, ensuring system stability and efficiency.
**3. Industrial Control System: **
- **Field**: Motor Control
- **Example**: In the industrial motor control system, BUK7Y72-80E-VB provides efficient switching control and handles large current loads, and is suitable for motor drivers and controllers to ensure stable operation and efficient operation of the equipment.
**4. Solar inverter: **
- **Field**: Renewable energy
- **Example**: In solar inverters, BUK7Y72-80E-VB can efficiently process the current output of solar panels, and is suitable for switch control and current management in solar systems to improve energy conversion efficiency.
**5. Consumer electronics: **
- **Field**: Smart devices
- **Example**: In the power management module of smartphones or tablets, BUK7Y72-80E-VB provides efficient power switch control, reduces power consumption, and improves the endurance of the device.
The low on-state resistance and high current carrying capacity of BUK7Y72-80E-VB MOSFET make it perform well in applications in multiple fields such as switching power supplies, electric vehicles, motor control, and solar inverters.
**1. Power Management Module: **
- **Field**: Switching Power Supply
- **Example**: In the switching power supply module, BUK7Y72-80E-VB effectively reduces power consumption and improves system efficiency through its low on-state resistance and high current handling capability, and is suitable for DC-DC converters and high-power power supply modules.
**2. Electric Vehicles: **
- **Field**: Battery Management and Motor Drive
- **Example**: In the battery management system and motor drive control of electric vehicles, BUK7Y72-80E-VB can efficiently handle the high current load of the battery and motor, ensuring system stability and efficiency.
**3. Industrial Control System: **
- **Field**: Motor Control
- **Example**: In the industrial motor control system, BUK7Y72-80E-VB provides efficient switching control and handles large current loads, and is suitable for motor drivers and controllers to ensure stable operation and efficient operation of the equipment.
**4. Solar inverter: **
- **Field**: Renewable energy
- **Example**: In solar inverters, BUK7Y72-80E-VB can efficiently process the current output of solar panels, and is suitable for switch control and current management in solar systems to improve energy conversion efficiency.
**5. Consumer electronics: **
- **Field**: Smart devices
- **Example**: In the power management module of smartphones or tablets, BUK7Y72-80E-VB provides efficient power switch control, reduces power consumption, and improves the endurance of the device.
The low on-state resistance and high current carrying capacity of BUK7Y72-80E-VB MOSFET make it perform well in applications in multiple fields such as switching power supplies, electric vehicles, motor control, and solar inverters.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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