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BUK7Y6R0-60E-VB Product details
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# Product Introduction:
BUK7Y6R0-60E-VB is a high-performance single N-channel MOSFET in SOT669 package. This MOSFET is designed for medium-to-high voltage and high-current applications, with a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 2.4V, and the on-resistance (RDS(ON)) is 3.48mΩ at VGS = 4.5V, while at VGS = 10V, the on-resistance is reduced to 2.9mΩ, and the supported continuous drain current (ID) can reach up to 100A. BUK7Y6R0-60E-VB uses Trench technology to provide excellent switching performance and low-power solutions, and is suitable for applications requiring high current and low on-resistance.
BUK7Y6R0-60E-VB is a high-performance single N-channel MOSFET in SOT669 package. This MOSFET is designed for medium-to-high voltage and high-current applications, with a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 2.4V, and the on-resistance (RDS(ON)) is 3.48mΩ at VGS = 4.5V, while at VGS = 10V, the on-resistance is reduced to 2.9mΩ, and the supported continuous drain current (ID) can reach up to 100A. BUK7Y6R0-60E-VB uses Trench technology to provide excellent switching performance and low-power solutions, and is suitable for applications requiring high current and low on-resistance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 2.4V | 100A | 2.9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 2.4V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 2.4V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
# Detailed parameters:
- **Package**: SOT669
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.4V
- **On-resistance (RDS(ON))**:
- 3.48mΩ @ VGS = 4.5V
- 2.9mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench
- **Package**: SOT669
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.4V
- **On-resistance (RDS(ON))**:
- 3.48mΩ @ VGS = 4.5V
- 2.9mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
#### Application Examples:
1. **High-efficiency power switch**:
BUK7Y6R0-60E-VB is suitable for high-efficiency power switch applications. Its low on-resistance and high current handling capability can significantly improve the power conversion efficiency. Especially in power switch systems that need to handle high loads and low power consumption, this MOSFET can effectively reduce energy loss and improve the overall operating efficiency of the system.
2. **High-power DC-DC converter**:
In high-power DC-DC converters, BUK7Y6R0-60E-VB can stably handle high current and medium voltage. Its low on-resistance and high current carrying capacity help optimize the power conversion process, provide reliable power conversion and voltage regulation functions, and are suitable for power management of high-power devices.
3. **Motor drive control**:
For motor drive systems, BUK7Y6R0-60E-VB provides sufficient current handling capability and efficient switching performance. It is suitable for driving high-current motors, such as industrial motors and electric vehicle motors, ensuring smooth operation of the motors and improving the overall efficiency and response speed of the system.
4. **Battery Management System**:
In the battery management system, this MOSFET can be used for charge and discharge control of the battery pack, especially when handling high-current battery packs. Its low on-resistance and high current handling capability can effectively improve the performance of the battery system and ensure the stability and safety of the battery charging and discharging process.
5. **High-power LED drive**:
BUK7Y6R0-60E-VB is also suitable for high-power LED driver applications. In this scenario, the low on-resistance can help drive high-brightness LEDs, providing efficient and stable lighting solutions, suitable for high-power LED lighting systems and high-efficiency lighting module switch control.
6. **Industrial Power Management**:
This MOSFET is also suitable for a variety of industrial power management applications. Its high current and medium voltage capabilities enable it to operate stably in industrial environments, suitable for power switches and protection circuits, and improve system reliability and safety.
BUK7Y6R0-60E-VB MOSFET's high current handling capability and low on-resistance make it an ideal choice for a variety of high power applications. Its excellent performance can meet the needs of power switches that require high current and low power consumption, providing a stable and reliable solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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