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BUK7Y65-100E-VB Product details
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Product Introduction
BUK7Y65-100E-VB is a high-performance single N-channel MOSFET in a SOT669 package. The device has a drain-source voltage (VDS) of up to 100V and a gate-source voltage (VGS) tolerance of ±20V. Its threshold voltage (Vth) range is around 1.4V. At a VGS of 4.5V, its on-resistance (RDS(ON)) is 13.92mΩ, and at a VGS of 10V it is 11.6mΩ, supporting a continuous drain current (ID) of up to 69A. BUK7Y65-100E-VB uses Trench technology to provide excellent switching performance and low conduction losses, making it ideal for applications requiring high voltage and high current.
BUK7Y65-100E-VB is a high-performance single N-channel MOSFET in a SOT669 package. The device has a drain-source voltage (VDS) of up to 100V and a gate-source voltage (VGS) tolerance of ±20V. Its threshold voltage (Vth) range is around 1.4V. At a VGS of 4.5V, its on-resistance (RDS(ON)) is 13.92mΩ, and at a VGS of 10V it is 11.6mΩ, supporting a continuous drain current (ID) of up to 69A. BUK7Y65-100E-VB uses Trench technology to provide excellent switching performance and low conduction losses, making it ideal for applications requiring high voltage and high current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | 11.6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
- **Model**: BUK7Y65-100E-VB
- **Package type**: SOT669
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 13.92mΩ @ VGS=4.5V
- 11.6mΩ @ VGS=10V
- **Drain current (ID)**: 69A
- **Technology**: Trench
- **Model**: BUK7Y65-100E-VB
- **Package type**: SOT669
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 13.92mΩ @ VGS=4.5V
- 11.6mΩ @ VGS=10V
- **Drain current (ID)**: 69A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **High voltage power management**
BUK7Y65-100E-VB is particularly suitable for high voltage power management applications, such as high voltage DC-DC converters and power switch modules. Its high drain-source voltage and low on-resistance enable it to have excellent performance when handling high voltage and high current, which can improve power conversion efficiency and reduce power consumption.
2. **Electric vehicles**
In the battery management system (BMS) and electric drive system of electric vehicles, BUK7Y65-100E-VB can effectively handle high voltage and high current loads. Its low conduction loss and high current carrying capacity ensure the efficient operation and reliability of the system, and improve the performance and endurance of electric vehicles.
3. **Industrial equipment**
This MOSFET is also widely used in industrial equipment, such as high voltage motor drives and industrial servo control systems. Its high current handling capability and low on-resistance can ensure the stability of the equipment under high load conditions and improve the reliability and performance of industrial automation systems.
4. **Power LED Driver**
In high-power LED driver applications, BUK7Y65-100E-VB can effectively control the LED current and reduce energy loss. Its excellent switching performance and high voltage tolerance enable it to be used in lighting systems that require high current and high voltage, improving lighting effects and extending the life of LEDs.
These application examples demonstrate the wide applicability of BUK7Y65-100E-VB in high voltage and high current applications, and its excellent electrical characteristics make it an ideal choice for a variety of high-performance applications.
1. **High voltage power management**
BUK7Y65-100E-VB is particularly suitable for high voltage power management applications, such as high voltage DC-DC converters and power switch modules. Its high drain-source voltage and low on-resistance enable it to have excellent performance when handling high voltage and high current, which can improve power conversion efficiency and reduce power consumption.
2. **Electric vehicles**
In the battery management system (BMS) and electric drive system of electric vehicles, BUK7Y65-100E-VB can effectively handle high voltage and high current loads. Its low conduction loss and high current carrying capacity ensure the efficient operation and reliability of the system, and improve the performance and endurance of electric vehicles.
3. **Industrial equipment**
This MOSFET is also widely used in industrial equipment, such as high voltage motor drives and industrial servo control systems. Its high current handling capability and low on-resistance can ensure the stability of the equipment under high load conditions and improve the reliability and performance of industrial automation systems.
4. **Power LED Driver**
In high-power LED driver applications, BUK7Y65-100E-VB can effectively control the LED current and reduce energy loss. Its excellent switching performance and high voltage tolerance enable it to be used in lighting systems that require high current and high voltage, improving lighting effects and extending the life of LEDs.
These application examples demonstrate the wide applicability of BUK7Y65-100E-VB in high voltage and high current applications, and its excellent electrical characteristics make it an ideal choice for a variety of high-performance applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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