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BUK7Y59-60E-VB Product details
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BUK7Y59-60E-VB MOSFET Product Introduction
BUK7Y59-60E-VB is a high-performance single N-channel power MOSFET in SOT669 package, designed for medium voltage and high current applications. The MOSFET has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) range of ±20V, supporting stable operation under various operating conditions. Its threshold voltage (Vth) range is 1V to 3V, allowing the MOSFET to turn on at a lower gate voltage. The on-resistance (RDS(ON)) of BUK7Y59-60E-VB is 7.8mΩ @ VGS=4.5V and 6.2mΩ @ VGS=10V, and the maximum continuous drain current (ID) is 64A. This MOSFET uses Trench technology to provide low on-resistance and excellent switching performance, suitable for applications requiring high current and high efficiency.
BUK7Y59-60E-VB is a high-performance single N-channel power MOSFET in SOT669 package, designed for medium voltage and high current applications. The MOSFET has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) range of ±20V, supporting stable operation under various operating conditions. Its threshold voltage (Vth) range is 1V to 3V, allowing the MOSFET to turn on at a lower gate voltage. The on-resistance (RDS(ON)) of BUK7Y59-60E-VB is 7.8mΩ @ VGS=4.5V and 6.2mΩ @ VGS=10V, and the maximum continuous drain current (ID) is 64A. This MOSFET uses Trench technology to provide low on-resistance and excellent switching performance, suitable for applications requiring high current and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 1~3V | 64A | 6.2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 1~3V | 64A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 1~3V | 64A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
1. **Package:** SOT669
2. **Configuration:** Single N-channel
3. **VDS (drain-source voltage):** 60V
4. **VGS (gate-source voltage):** ±20V
5. **Vth (threshold voltage):** 1V to 3V
6. **RDS(ON) (on-resistance):**
- 7.8mΩ @ VGS=4.5V
- 6.2mΩ @ VGS=10V
7. **ID (continuous leakage current):** 64A
8. **Technology:** Trench
1. **Package:** SOT669
2. **Configuration:** Single N-channel
3. **VDS (drain-source voltage):** 60V
4. **VGS (gate-source voltage):** ±20V
5. **Vth (threshold voltage):** 1V to 3V
6. **RDS(ON) (on-resistance):**
- 7.8mΩ @ VGS=4.5V
- 6.2mΩ @ VGS=10V
7. **ID (continuous leakage current):** 64A
8. **Technology:** Trench
Domain and module applications：
Application fields and usage scenarios
BUK7Y59-60E-VB MOSFET is suitable for the following fields and modules due to its low on-resistance and high current handling capability:
1. **Power management:** Used in switch mode power supplies (SMPS) and high power power modules to achieve efficient power conversion and stable power output, meeting the requirements of medium and high current applications.
2. **Electric vehicles:** Suitable for battery management and electric drive systems in electric vehicles, handling high current and medium voltage, ensuring efficient power transmission and system stability.
3. **Industrial control:** Used in motor control and load switches in industrial automation equipment, supporting high power applications and improving system reliability and efficiency.
4. **LED drive:** Used in LED drive circuits to ensure the brightness and service life of LED lamps with stable current control.
5. **DC-DC converter:** Used in high current DC-DC converters to provide stable voltage conversion to meet the needs of various electronic devices and applications.
6. **Battery Management System:** Used in battery management systems to control the battery charge and discharge process, ensure battery safety and extend battery life.
These application examples demonstrate the wide range of uses of BUK7Y59-60E-VB MOSFET and its superior performance under medium voltage, high current and high efficiency requirements, making it suitable for a variety of high power and high efficiency application scenarios.
BUK7Y59-60E-VB MOSFET is suitable for the following fields and modules due to its low on-resistance and high current handling capability:
1. **Power management:** Used in switch mode power supplies (SMPS) and high power power modules to achieve efficient power conversion and stable power output, meeting the requirements of medium and high current applications.
2. **Electric vehicles:** Suitable for battery management and electric drive systems in electric vehicles, handling high current and medium voltage, ensuring efficient power transmission and system stability.
3. **Industrial control:** Used in motor control and load switches in industrial automation equipment, supporting high power applications and improving system reliability and efficiency.
4. **LED drive:** Used in LED drive circuits to ensure the brightness and service life of LED lamps with stable current control.
5. **DC-DC converter:** Used in high current DC-DC converters to provide stable voltage conversion to meet the needs of various electronic devices and applications.
6. **Battery Management System:** Used in battery management systems to control the battery charge and discharge process, ensure battery safety and extend battery life.
These application examples demonstrate the wide range of uses of BUK7Y59-60E-VB MOSFET and its superior performance under medium voltage, high current and high efficiency requirements, making it suitable for a variety of high power and high efficiency application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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