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BUK7Y54-75B-VB Product details
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Product Overview: BUK7Y54-75B-VB
BUK7Y54-75B-VB is a high-performance unipolar N-channel MOSFET in SOT669 package with 80V drain-source voltage (V_DS) and 20V (±V) gate-source voltage (V_GS). The MOSFET has a threshold voltage (V_th) of 1.4V, an on-resistance (R_DS(on)) of 7.2mΩ at a gate-source voltage of 4.5V and 6mΩ at 10V, and a maximum drain current (I_D) of 90A. The MOSFET uses Trench technology to provide excellent switching performance and low conduction losses, and is suitable for applications requiring high current and high voltage.
BUK7Y54-75B-VB is a high-performance unipolar N-channel MOSFET in SOT669 package with 80V drain-source voltage (V_DS) and 20V (±V) gate-source voltage (V_GS). The MOSFET has a threshold voltage (V_th) of 1.4V, an on-resistance (R_DS(on)) of 7.2mΩ at a gate-source voltage of 4.5V and 6mΩ at 10V, and a maximum drain current (I_D) of 90A. The MOSFET uses Trench technology to provide excellent switching performance and low conduction losses, and is suitable for applications requiring high current and high voltage.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
- **Drain-source voltage (V_DS):** 80V
- This parameter refers to the maximum voltage that can be applied between the drain and source of the MOSFET.
- **Gate-source voltage (V_GS):** 20V (±V)
- This parameter refers to the maximum voltage allowed to be applied between the gate and source of the MOSFET.
- **Threshold voltage (V_th):** 1.4V
- This is the minimum gate-source voltage required for the MOSFET to start conducting.
- **On-resistance (R_DS(on)):** 7.2mΩ @ V_GS = 4.5V
- The resistance between the drain and source of the MOSFET in the on state when the gate-source voltage is 4.5V.
- **On-resistance (R_DS(on)):** 6mΩ @ V_GS = 10V
- The resistance between the drain and source of the MOSFET in the on state when the gate-source voltage is 10V.
- **Maximum continuous drain current (I_D):** 90A
- The maximum continuous current that the drain terminal of the MOSFET can handle under proper heat dissipation conditions.
- **Package type:** SOT669
- The physical package of the MOSFET that provides good heat dissipation and mechanical strength.
- **Configuration:** Unipolar N-channel
- This MOSFET has a single N-channel for conducting electricity.
- **Technology:** Trench
- Indicates that the MOSFET is manufactured using Trench technology, which has excellent switching performance and low conduction losses.
- **Drain-source voltage (V_DS):** 80V
- This parameter refers to the maximum voltage that can be applied between the drain and source of the MOSFET.
- **Gate-source voltage (V_GS):** 20V (±V)
- This parameter refers to the maximum voltage allowed to be applied between the gate and source of the MOSFET.
- **Threshold voltage (V_th):** 1.4V
- This is the minimum gate-source voltage required for the MOSFET to start conducting.
- **On-resistance (R_DS(on)):** 7.2mΩ @ V_GS = 4.5V
- The resistance between the drain and source of the MOSFET in the on state when the gate-source voltage is 4.5V.
- **On-resistance (R_DS(on)):** 6mΩ @ V_GS = 10V
- The resistance between the drain and source of the MOSFET in the on state when the gate-source voltage is 10V.
- **Maximum continuous drain current (I_D):** 90A
- The maximum continuous current that the drain terminal of the MOSFET can handle under proper heat dissipation conditions.
- **Package type:** SOT669
- The physical package of the MOSFET that provides good heat dissipation and mechanical strength.
- **Configuration:** Unipolar N-channel
- This MOSFET has a single N-channel for conducting electricity.
- **Technology:** Trench
- Indicates that the MOSFET is manufactured using Trench technology, which has excellent switching performance and low conduction losses.
Domain and module applications：
Application Examples
**1. High-efficiency power conversion: **
- The BUK7Y54-75B-VB MOSFET is suitable for high-efficiency power conversion systems such as DC-DC converters and switch mode power supplies (SMPS). Due to its low on-resistance and high current handling capability, this MOSFET can reduce power losses and improve the overall efficiency of the power supply. It is commonly used in computer power supplies, industrial power supplies, and other devices that require high-efficiency power management.
**2. Battery Management System (BMS): **
- In battery management systems, the BUK7Y54-75B-VB MOSFET can be used as a switch or protection element. Its high current capability and low on-resistance make it suitable for electric vehicles, portable electronic devices, and industrial battery systems. This MOSFET can effectively manage the battery's charge and discharge process to ensure system stability and safety.
**3. Power drive and load switching: **
- This MOSFET is suitable for a variety of motor drive and load switching applications. In applications where high current and high voltage are required, such as power tools and motor drive systems, it can provide reliable switching control to ensure efficient operation and long-term stability of the equipment.
**4. Automotive Electronic Systems:**
- BUK7Y54-75B-VB MOSFET can be applied to switching and control tasks in automotive electronic systems, such as electric seat adjustment, power distribution, and light control. Its high current handling capability and low on-resistance ensure the reliability and stable performance of automotive electronic systems.
**5. Solar Inverters:**
- In solar inverters, BUK7Y54-75B-VB MOSFET can be used for efficient switching and current management. Due to its excellent switching performance and low conduction loss, this MOSFET can effectively improve the efficiency of the inverter and ensure the stable operation of the solar system.
By applying BUK7Y54-75B-VB MOSFET, designers can realize efficient and stable electronic systems to meet the needs of various high-power and high-current applications. This makes it a critical component in modern high-performance electronic designs.
**1. High-efficiency power conversion: **
- The BUK7Y54-75B-VB MOSFET is suitable for high-efficiency power conversion systems such as DC-DC converters and switch mode power supplies (SMPS). Due to its low on-resistance and high current handling capability, this MOSFET can reduce power losses and improve the overall efficiency of the power supply. It is commonly used in computer power supplies, industrial power supplies, and other devices that require high-efficiency power management.
**2. Battery Management System (BMS): **
- In battery management systems, the BUK7Y54-75B-VB MOSFET can be used as a switch or protection element. Its high current capability and low on-resistance make it suitable for electric vehicles, portable electronic devices, and industrial battery systems. This MOSFET can effectively manage the battery's charge and discharge process to ensure system stability and safety.
**3. Power drive and load switching: **
- This MOSFET is suitable for a variety of motor drive and load switching applications. In applications where high current and high voltage are required, such as power tools and motor drive systems, it can provide reliable switching control to ensure efficient operation and long-term stability of the equipment.
**4. Automotive Electronic Systems:**
- BUK7Y54-75B-VB MOSFET can be applied to switching and control tasks in automotive electronic systems, such as electric seat adjustment, power distribution, and light control. Its high current handling capability and low on-resistance ensure the reliability and stable performance of automotive electronic systems.
**5. Solar Inverters:**
- In solar inverters, BUK7Y54-75B-VB MOSFET can be used for efficient switching and current management. Due to its excellent switching performance and low conduction loss, this MOSFET can effectively improve the efficiency of the inverter and ensure the stable operation of the solar system.
By applying BUK7Y54-75B-VB MOSFET, designers can realize efficient and stable electronic systems to meet the needs of various high-power and high-current applications. This makes it a critical component in modern high-performance electronic designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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