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BUK7Y4R4-40E-VB Product details
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BUK7Y4R4-40E-VB Product Overview
BUK7Y4R4-40E-VB is a high-performance N-channel MOSFET in SOT669 package. Designed for high current and high power applications, the device features a drain-source voltage (VDS) of 40V, a gate-source voltage (VGS) tolerance of ±20V, and a threshold voltage (Vth) of 1.4V. Using Trench technology, this MOSFET offers extremely low on-resistance and excellent current handling capability, making it ideal for electronic system applications that require high performance and high reliability.
BUK7Y4R4-40E-VB is a high-performance N-channel MOSFET in SOT669 package. Designed for high current and high power applications, the device features a drain-source voltage (VDS) of 40V, a gate-source voltage (VGS) tolerance of ±20V, and a threshold voltage (Vth) of 1.4V. Using Trench technology, this MOSFET offers extremely low on-resistance and excellent current handling capability, making it ideal for electronic system applications that require high performance and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
- **Package**: SOT669
- **Configuration**: Single-stage N-type
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 2.4mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench
- **Package**: SOT669
- **Configuration**: Single-stage N-type
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 2.4mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Application Examples
1. **High-efficiency power switch**: BUK7Y4R4-40E-VB is suitable for high-efficiency power switch applications such as DC-DC converters and AC-DC power adapters. Its ultra-low on-resistance and high current handling capability ensure high efficiency of power conversion, reduce power loss, and improve overall system performance.
2. **Motor drive system**: In power tools, electric vehicles, and industrial automation equipment, BUK7Y4R4-40E-VB provides stable switching performance and strong current handling capability, which can effectively control high current loads and meet various high power requirements.
3. **Load switch**: In data center power supplies and battery-powered equipment, BUK7Y4R4-40E-VB can efficiently handle and switch high current loads to ensure system stability and reliability.
4. **Inverter and Uninterruptible Power Supply (UPS)**: This MOSFET is suitable for inverter and UPS systems, capable of stably handling high power loads. Its low on-resistance and excellent thermal management performance improve system efficiency and reliability, ensuring efficient operation during power conversion.
5. **High-power Audio Amplifier**: In high-power audio amplifier applications, the BUK7Y4R4-40E-VB provides stable switching performance and low on-resistance, reducing signal distortion and heat generation, and achieving clear audio output.
These application examples demonstrate the wide applicability of the BUK7Y4R4-40E-VB in high-power and high-efficiency fields, highlighting its important role in modern electronic design.
1. **High-efficiency power switch**: BUK7Y4R4-40E-VB is suitable for high-efficiency power switch applications such as DC-DC converters and AC-DC power adapters. Its ultra-low on-resistance and high current handling capability ensure high efficiency of power conversion, reduce power loss, and improve overall system performance.
2. **Motor drive system**: In power tools, electric vehicles, and industrial automation equipment, BUK7Y4R4-40E-VB provides stable switching performance and strong current handling capability, which can effectively control high current loads and meet various high power requirements.
3. **Load switch**: In data center power supplies and battery-powered equipment, BUK7Y4R4-40E-VB can efficiently handle and switch high current loads to ensure system stability and reliability.
4. **Inverter and Uninterruptible Power Supply (UPS)**: This MOSFET is suitable for inverter and UPS systems, capable of stably handling high power loads. Its low on-resistance and excellent thermal management performance improve system efficiency and reliability, ensuring efficient operation during power conversion.
5. **High-power Audio Amplifier**: In high-power audio amplifier applications, the BUK7Y4R4-40E-VB provides stable switching performance and low on-resistance, reducing signal distortion and heat generation, and achieving clear audio output.
These application examples demonstrate the wide applicability of the BUK7Y4R4-40E-VB in high-power and high-efficiency fields, highlighting its important role in modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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