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BUK7Y41-80E-VB Product details
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BUK7Y41-80E-VB MOSFET Product Introduction
BUK7Y41-80E-VB is a single N-channel MOSFET in a SOT669 package. This MOSFET uses Trench technology and is designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 80V and its maximum gate-source voltage (VGS) is ±20V. The threshold voltage (Vth) is 1.4V, ensuring that the MOSFET can be turned on at a low gate-source voltage. The on-resistance (RDS(ON)) of BUK7Y41-80E-VB is 7.2mΩ at a gate-source voltage of 4.5V, and drops to 6mΩ at a gate-source voltage of 10V. This MOSFET can handle a continuous drain current (ID) of up to 90A.
BUK7Y41-80E-VB is a single N-channel MOSFET in a SOT669 package. This MOSFET uses Trench technology and is designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 80V and its maximum gate-source voltage (VGS) is ±20V. The threshold voltage (Vth) is 1.4V, ensuring that the MOSFET can be turned on at a low gate-source voltage. The on-resistance (RDS(ON)) of BUK7Y41-80E-VB is 7.2mΩ at a gate-source voltage of 4.5V, and drops to 6mΩ at a gate-source voltage of 10V. This MOSFET can handle a continuous drain current (ID) of up to 90A.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
- **Package type**: SOT669
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 7.2mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 90A
- **Technology**: Trench
- **Package type**: SOT669
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 7.2mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 90A
- **Technology**: Trench
Domain and module applications：
Application Examples
1. **High-voltage Switching Power Supply**:
- The high drain-source voltage and low on-resistance of BUK7Y41-80E-VB make it very suitable for high-voltage switching power supply applications. It can efficiently handle high-voltage switching operations, reduce power losses, and improve the overall efficiency of the power system. It is widely used in high-voltage power modules and inverters.
2. **Electric Vehicle (EV) Power Management**:
- In the power management system of electric vehicles, the high voltage and high current capabilities of this MOSFET make it suitable for applications that handle high power and high voltage. It can effectively manage the switching control of battery packs and power modules, improving the performance and reliability of the system.
3. **Industrial Motor Drive**:
- For industrial motor drive applications that require high voltage and high current, BUK7Y41-80E-VB is an ideal choice. It can provide stable current control in motor drive systems, improve the efficiency and reliability of motor control, and is suitable for various high-power motor control systems.
4. **High-power LED driver circuits**:
- BUK7Y41-80E-VB performs well in high-power LED driver circuits. Its low on-resistance can effectively manage high current loads and ensure stable current output, thereby improving the efficiency and stability of LED driver circuits.
5. **Power converters and inverters**:
- In power converter and inverter applications, the high voltage and high current handling capabilities of this MOSFET make it suitable for high-power switching operations. It can improve the performance of converters and inverters and is widely used in energy conversion and power processing.
1. **High-voltage Switching Power Supply**:
- The high drain-source voltage and low on-resistance of BUK7Y41-80E-VB make it very suitable for high-voltage switching power supply applications. It can efficiently handle high-voltage switching operations, reduce power losses, and improve the overall efficiency of the power system. It is widely used in high-voltage power modules and inverters.
2. **Electric Vehicle (EV) Power Management**:
- In the power management system of electric vehicles, the high voltage and high current capabilities of this MOSFET make it suitable for applications that handle high power and high voltage. It can effectively manage the switching control of battery packs and power modules, improving the performance and reliability of the system.
3. **Industrial Motor Drive**:
- For industrial motor drive applications that require high voltage and high current, BUK7Y41-80E-VB is an ideal choice. It can provide stable current control in motor drive systems, improve the efficiency and reliability of motor control, and is suitable for various high-power motor control systems.
4. **High-power LED driver circuits**:
- BUK7Y41-80E-VB performs well in high-power LED driver circuits. Its low on-resistance can effectively manage high current loads and ensure stable current output, thereby improving the efficiency and stability of LED driver circuits.
5. **Power converters and inverters**:
- In power converter and inverter applications, the high voltage and high current handling capabilities of this MOSFET make it suitable for high-power switching operations. It can improve the performance of converters and inverters and is widely used in energy conversion and power processing.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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